ST STPS4030CT, STPS4030CG, STPS4030CR User Manual

®

STPS4030CT/CG/CR

 

 

 

LOW DROP POWER SCHOTTKY RECTIFIER

MAJOR PRODUCTS CHARACTERISTICS

IF(AV)

2 x 20 A

 

 

VRRM

30 V

 

 

Tj (max)

150°C

 

 

VF (max)

0.40 V

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY

LOW THERMAL RESISTANCE

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters.

Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

A1

K

A2

K

A2

A2

 

K

A1

A1

TO-220AB D2PAK STPS4030CT

STPS4030CG

A2

K

A1

I2PAK

STPS4030CR

Symbol

 

 

 

Parameter

 

 

 

Value

Unit

 

 

 

 

 

 

 

 

 

 

 

VRRM

Repetitive peak reverse voltage

 

 

 

30

V

IF(RMS)

RMS forward current

 

 

 

32

A

IF(AV)

Average forward

 

Tc = 130°C

 

Per diode

20

A

 

 

 

current

 

 

δ = 0.5

 

Per device

40

 

IFSM

Surge non repetitive forward current

 

tp = 10 ms

Sinusoidal

220

A

IRRM

Peak repetitive reverse current

 

tp=2 µs square F=1kHz

2

A

PARM

Repetitive peak avalanche power

 

tp = 1µs Tj = 25°C

5300

W

Tstg

Storage temperature range

 

 

 

- 65 to + 150

°C

 

Tj

Maximum operating junction temperature *

 

 

 

150

°C

dV/dt

Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)

10000

V/µs

* :

dPtot

 

<

 

1

thermal runaway condition for a diode on its own heatsink

 

dTj

Rth( j a)

 

 

 

 

 

 

 

 

 

 

July 2003 - Ed: 2A

1/6

 

ST STPS4030CT, STPS4030CG, STPS4030CR User Manual

STPS4030CT/CG/CR

THERMAL RESISTANCES

Symbol

Parameter

 

Value

Unit

Rth(j-c)

Junction to case TO-220AB - D2PAK - I2PAK

Per diode

1.6

°C/W

 

 

Total

0.85

 

Rth(c)

 

Coupling

0.1

°C/W

 

 

 

 

 

STATIC ELECTRICAL CHARACTERISTICS (per diode)

 

 

 

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

IR *

Reverse leakage

Tj = 25°C

V R = VRRM

 

0.50

1.0

mA

 

current

Tj = 125°C

 

 

170

350

 

VF *

Forward voltage drop

Tj = 25°C

IF = 20 A

 

0.44

0.49

V

 

 

Tj = 125°C

I F = 20 A

 

0.35

0.40

 

 

 

Tj = 25°C

IF = 40 A

 

0.52

0.61

 

 

 

Tj = 125°C

I F = 40 A

 

0.46

0.55

 

Pulse test : * tp = 380 μs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.25 x IF(AV) + 0.0075 IF2(RMS)

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient temperature(δ = 0.5).

P(W)

 

 

 

 

 

12

 

δ = 0.1

δ = 0.2

 

 

 

δ = 0.05

δ = 0.5

 

10

 

 

 

 

 

8

 

 

 

 

δ = 1

 

 

 

 

 

6

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

T

2

 

 

 

 

 

 

 

 

IF(av)(A)

δ=tp/T

tp

0

 

 

 

 

 

 

 

 

0

5

10

15

20

25

Fig. 3: Normalized avalanche power derating

versus pulse duration.

 

 

 

PARM(tp)

 

 

 

 

PARM(1µs)

 

 

 

 

1

 

 

 

 

 

0.1

 

 

 

 

 

0.01

 

 

 

 

 

0.001

 

 

tp(µs)

 

 

 

 

 

 

 

0.01

0.1

1

10

100

1000

2/6

 

 

 

 

 

IF(av)(A)

 

 

 

 

 

 

22

 

 

 

 

 

 

20

 

 

Rth(j-a)=Rth(j-c)

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

16

 

 

 

 

 

 

14

 

 

 

 

 

 

12

 

 

 

 

 

 

10

 

 

 

 

 

 

8

 

Rth(j-a)=50°C/W

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

4

 

 

 

 

 

 

2

 

 

Tamb(°C)

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

0

25

50

75

100

125

150

Fig. 4: Normalized avalanche power derating versus junction temperature.

 

PARM(tp)

 

 

 

 

 

PARM(25°C)

 

 

 

 

 

1.2

 

 

 

 

 

 

1

 

 

 

 

 

 

0.8

 

 

 

 

 

 

0.6

 

 

 

 

 

 

0.4

 

 

 

 

 

 

0.2

 

 

 

 

 

 

0

 

 

Tj(°C)

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

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