ST STPS40170C User Manual

®

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

V

V

F

I

F(AV)

RRM

T

j

(max)

2 x 20 A

170 V

175 °C

0.75 V

STPS40170C

A1

K

A2

K

K

FEATURES AND BENEFITS

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, D2PAK and TO-247,
these devices are intended for use to enhance the
reliability of the application.

A2

K

A1

TO-220AB

STPS40170CT

D2PA K

STPS40170CG

A2

K

A1

TO-247

STPS40170CW

Table 2: Order Codes

Part Numbers Marking

STPS40170CT STPS40170CT

STPS40170CG STPS40170CG

STPS40170CG-TR STPS40170CG

A2

A1

September 2005

REV. 1

STPS40170CW STPS40170CW

1/8

STPS40170C

d

-

Table 3: Absolute Ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

* : thermal runaway condition for a diode on its own heatsink

dTj

Table 4: Thermal Parameters

Symbol Parameter Value Unit

R

th(j-c)

R

th(c)

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R

Repetitive peak reverse voltage 170 V

RMS forward current 60 A

T

Average forward current

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature * 175 °C

j

1

-------------- ------------

<

Rth j a–()

= 150 °C δ = 0.5

c

= 10 ms sinusoidal

t

p

t

= 1 µs Tj = 25 °C

p

Junction to case

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Per diode
Per device

Per diode
Total

Coupling

14100 W

1.2

0.85

0.5

20
40

250 A

°C/W

A

Table 5: Static Electrical Characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ Max. Unit

T

= 25 °C

*

I

R

V

F

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.64 x I

Reverse leakage current

**

Forward voltage drop

** tp = 380 µs,

δ < 2%

j

T

= 125 °C

j

= 25 °C

T

j

T

= 125 °C

j

= 25 °C

T

j

= 125 °C

T

j

V

R

I

F

I

F

= V

= 20A

= 40A

F(AV)

RRM

+ 0.055 I

F2(RMS)

30 µA

730 mA

0.92

0.69 0.75

1.00

0.79 0.86

V

2/8

STPS40170C

Figure 1: Average forward power dissipation
versus average forward current (per diode)

P

(W)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

0 2 4 6 8 10121416182022242628

d=0.05

d=0.1

I

(A)

F(AV)

d=0.2

d=0.5

d

=t /T

d=1

T

t

p

p

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)

I

(A)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

T

t

=t /T

p

p

d

0 25 50 75 100 125 150 175

R

th(j-a)=Rth(j-c)

R

th(j-a)

=15°C/W

T

(°C)

amb

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25

50 75 100 125 150

T (°C)

j

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)

IM(A)

250

200

150

100

50

I

M

t

0

1.E-03 1.E-02 1.E-01 1.E+00

d=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

d=0.5

0.6

0.5

d=0.2

0.4

d=0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tP(s)

d

=t /T

T

t

p

p

3/8

STPS40170C

Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)

IR(µA)

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Figure 9: Forward voltage drop versus forward
current (per diode, low level)

IFM(A)

20

18

16

14

12

10

8

6

4

2

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VFM(V)

Tj=125°C

Tj=125°C

(Maximum values)

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)

C(pF)

1000

100

VR(V)

10

1 10 100 1000

V

OSC

F=1MHz

=30mV

Tj=25°C

RMS

Figure 10: Forward voltage drop versus
forward current (per diode, high level)

IFM(A)

1000

Tj=125°C

Tj=125°C

(Maximum values)

100

10

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

VFM(V)

Figure 11: Thermal resistance junction to am­bient versus copper surface under tab (epoxy

2

printed board FR4, Cu = 35µm) (D

R

(°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

4/8

SCU(cm²)

PAK)

D²PAK

Figure 12: D2PAK Package Mechanical Data

m

D

A

L2

E

L

L3

B2

B

G

* FLAT ZONE NO LESS THAN 2m

C2

A1

C

A2

M

R

*

V2

STPS40170C

DIMENSIONS

REF.

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Millimeters Inches

Min. Max. Min. Max.

Figure 13: Foot Print Dimensions (in millimeters)

16.90

10.30

8.90

3.70

5.08

1.30

5/8

STPS40170C

Figure 14: TO-247 Package Mechanical Data

V

V

H

L5

L

F1

V2

F(x3)

F4

G

F2

F3

L2

L1

L3

Dia

A

L4

D

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.85 5.15 0.191 0.203

D 2.20 2.60 0.086 0.102

E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055

F1 3.00 0.118

F2 2.00 0.078

F3 2.00 2.40 0.078 0.094

F4 3.00 3.40 0.118 0.133

G 10.90 0.429

H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793

L1 3.70 4.30 0.145 0.169

L2 18.50 0.728

L3 14.20 14.80 0.559 0.582

L4 34.60 1.362

EM

L5 5.50 0.216

M 2.00 3.00 0.078 0.118

V5° 5°

V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

6/8

Figure 15: TO-220AB Package Mechanical Data

A

C

L7

D

M

E

L2

F2

F1

H2

Dia

L5

L6

L9

L4

F

G1

G

STPS40170C

DIMENSIONS

REF.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. 3.75 3.85 0.147 0.151

Millimeters Inches

Min. Max. Min. Max.

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.

Table 6: Ordering Information

Ordering type Marking Package Weight Base qty

Delivery

mode

STPS40170CT STPS40170CT TO-220AB 2.20 g 50 Tube

STPS40170CG STPS40170CG

STPS40170CG-TR STPS40170CG 1000 Tape & reel

D

2

PAK

1.48 g

50 Tube

STPS40170CW STPS40170CW TO-247 4.4 g 30 Tube

■ Epoxy meets UL94, V0

■ Cooling method: by conduction (C)

■ TO-220 - Recommended torque value: 0.55 Nm, Maximum torque value: 0.7 Nm.

■ TO-247 - Recommended torque value: 0.8 Nm, Maximum torque value: 1.0 Nm.

Table 7: Revision History

Date Revision Description of Changes

16-Sep-2005 1 First issue.

7/8

STPS40170C

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

© 2005 STMicroelectronics - All rights reserved

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