ST STPS40170C User Manual

®

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

V

F

I

F(AV)

RRM

T

j

(max)

2 x 20 A

170 V

175 °C

0.75 V

STPS40170C

A1

K

A2

K

FEATURES AND BENEFITS

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, D2PAK and TO-247, these devices are intended for use to enhance the reliability of the application.

A2

K

A1

TO-220AB

STPS40170CT

D2PA K

STPS40170CG

A2

K

A1

TO-247

STPS40170CW

Table 2: Order Codes

Part Numbers Marking

STPS40170CT STPS40170CT

STPS40170CG STPS40170CG

STPS40170CG-TR STPS40170CG

A2

A1

September 2005

REV. 1

STPS40170CW STPS40170CW

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STPS40170C

d

-

Table 3: Absolute Ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

* : thermal runaway condition for a diode on its own heatsink

dTj

Table 4: Thermal Parameters

Symbol Parameter Value Unit

R

th(j-c)

R

th(c)

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R

Repetitive peak reverse voltage 170 V

RMS forward current 60 A

T

Average forward current

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature * 175 °C

j

1

-------------- ------------

<

Rth j a–()

= 150 °C δ = 0.5

c

= 10 ms sinusoidal

t

p

t

= 1 µs Tj = 25 °C

p

Junction to case

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Per diode Per device

Per diode Total

Coupling

14100 W

1.2

0.85

0.5

20 40

250 A

°C/W

A

Table 5: Static Electrical Characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ Max. Unit

T

= 25 °C

*

I

R

V

F

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.64 x I

Reverse leakage current

**

Forward voltage drop

** tp = 380 µs,

δ < 2%

j

T

= 125 °C

j

= 25 °C

T

j

T

= 125 °C

j

= 25 °C

T

j

= 125 °C

T

j

V

R

I

F

I

F

= V

= 20A

= 40A

F(AV)

RRM

+ 0.055 I

F2(RMS)

30 µA

730 mA

0.92

0.69 0.75

1.00

0.79 0.86

V

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STPS40170C

Figure 1: Average forward power dissipation versus average forward current (per diode)

P

(W)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

0 2 4 6 8 10121416182022242628

d=0.05

d=0.1

I

(A)

F(AV)

d=0.2

d=0.5

d

=t /T

d=1

T

t

p

Figure 3: Normalized avalanche power derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)

I

(A)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

T

t

=t /T

p

d

0 25 50 75 100 125 150 175

R

th(j-a)=Rth(j-c)

R

th(j-a)

=15°C/W

T

(°C)

amb

Figure 4: Normalized avalanche power derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25

50 75 100 125 150

T (°C)

j

Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)

IM(A)

250

200

150

100

50

I

M

t

0

1.E-03 1.E-02 1.E-01 1.E+00

d=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 6: Relative variation of thermal impedance junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

d=0.5

0.6

0.5

d=0.2

0.4

d=0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tP(s)

d

=t /T

T

t

p

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