ST STPS40170C User Manual

®	STPS40170C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

IF(AV)	2 x 20 A
VRRM	170 V
Tj	175 °C
VF(max)	0.75 V

FEATURES AND BENEFITS

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

■Low thermal resistance

■High frequency operation

■Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, D2PAK and TO-247, these devices are intended for use to enhance the reliability of the application.

	A1
		K
	A2
	K
		K
	A2	A2
		A1
	K
	A1

TO-220AB D2PAK STPS40170CT STPS40170CG

	A2
	K
	A1
TO-247
STPS40170CW
Table 2: Order Codes
Part Numbers	Marking
STPS40170CT	STPS40170CT
STPS40170CG	STPS40170CG
STPS40170CG-TR	STPS40170CG
STPS40170CW	STPS40170CW

September 2005

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Table 3: Absolute Ratings (limiting values, per diode)

Symbol			Parameter					Value		Unit
VRRM		Repetitive peak reverse voltage						170		V
IF(RMS)		RMS forward current						60		A
IF(AV)		Average forward current	Tc = 150 °C δ	= 0.5			Per diode	20		A
							Per device	40
IFSM		Surge non repetitive forward current			tp = 10 ms sinusoidal			250		A
PARM		Repetitive peak avalanche power			tp = 1 µs Tj = 25 °C			14100		W
Tstg		Storage temperature range						-65 to + 175		°C
Tj		Maximum operating junction temperature *						175		°C
dV/dt		Critical rate of rise of reverse voltage						10000		V/µs
dPtot	1
---------------	-------------------------
* : dTj < Rth(j – a) thermal runaway condition for a diode on its own heatsink
Table 4: Thermal Parameters
Symbol			Parameter					Value		Unit
Rth(j-c)		Junction to case				Per diode		1.2
						Total		0.85		°C/W
Rth(c)						Coupling		0.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 5: Static Electrical Characteristics (per diode)

Symbol	Parameter		Tests conditions				Min.	Typ	Max.	Unit
IR *	Reverse leakage current		Tj = 25 °C	VR = VRRM					30	µA
			Tj = 125 °C					7	30	mA
			Tj = 25 °C	IF = 20A					0.92
VF **	Forward voltage drop		Tj = 125 °C					0.69	0.75	V
			Tj = 25 °C	IF = 40A					1.00
			Tj = 125 °C					0.79	0.86
Pulse test:	* tp = 5 ms, δ < 2%
	** tp = 380 µs, δ < 2%						2
To evaluate the conduction losses use the following equation: P = 0.64 x I					+ 0.055 I
				F(AV)			F (RMS)

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Figure 1: Average forward power dissipation versus average forward current (per diode)

P	(W)
F(AV)

22							=0.1				=0.5
20					=0.05				=0.2				=1
18
16
14
12
10
8
6												T
4
2							IF(AV)(A)				=tp/T		tp
0
0	2	4	6	8	10	12	14	16	18	20	22	24	26	28
Figure		3:		Normalized				avalanche					power

derating versus pulse duration

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000

Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)

I	(A)
F(AV)

22
20			Rth(j-a)=Rth(j-c)
18
16
14
12			Rth(j-a)=15°C/W
10
8
6	T
4
2	=tp/T	tp	Tamb(°C)
0
0	25	50	75	100	125	150	175

Figure 4: Normalized avalanche power derating versus junction temperature

PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2			Tj(°C)
0
25	50	75	100	125	150

Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)

I	(A)
M
250
200
150				TC=50°C
				TC=75°C
100
				TC=125°C
50	IM
		t	t(s)
		=0.5
0
1.E-03		1.E-02	1.E-01	1.E+00

Figure 6: Relative variation of thermal impedance junction to case versus pulse duration

Z	/R
th(j-c)	th(j-c)

1.0

0.9

0.8

0.7

=0.5

0.6

0.5

0.4=0.2

0.3=0.1

0.2				T
0.1	Single pulse		=tp/T	tp
		tP(s)
0.0
1.E-03		1.E-02	1.E-01	1.E+00

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