ST STPS40100HR User Manual
STPS40100HR
Aerospace 2 x 20 A - 100 V Schottky rectifier
Features
■Forward current: 2 x 20 A
■Repetitive peak voltage: 100 V
■Low forward voltage drop: 0.9 V
■Maximum junction temperature: 175 °C
■Negligible switching losses
■Low capacitance
■High reverse avalanche surge capability
■Hermetic packages
■Target radiation qualification:
–150 krad (Si) low dose rate
–1 Mrad high dose rate
■ESCC qualified
TO-254
Description
This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in hermetically sealed packages both surface mount and through hole, it is ideal for use in applications for aerospace and other harsh environments.
The STPS40100HR is intended for use in medium voltage application and particularly, in high frequency circuits where low switching losses and low noise are required.
Table 1. |
Device summary |
|
|
|
|
|
||
Order code |
ESCC detailed |
Quality level |
Configuration |
Package |
Mass |
EPPL |
||
specification |
||||||||
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
STPS40100C2FSY1 |
- |
Engineering |
Double die, |
|
|
- |
||
model |
|
|
||||||
|
|
|
common cathode |
T0-254 |
10.0 g |
|
||
|
|
|
|
|
||||
STPS40100C2FSYHR |
5106/019/01 |
ESCC flight |
pin 2 |
|
|
Y |
||
|
|
|
||||||
|
|
|
|
|
|
|
|
|
March 2010 |
Doc ID 17306 Rev 1 |
1/9 |
www.st.com
Characteristics |
STPS40100HR |
|
|
1 Characteristics
Table 2. |
Absolute maximum ratings |
|
|
|
Symbol |
Characteristic |
Value |
Unit |
|
|
|
|
|
|
IFSM |
Forward surge current (per diode)(1) |
300 |
A |
|
VRRM |
Repetitive peak reverse voltage(2) |
100 |
V |
|
I |
Repetitive peak reverse current(3) |
1 |
A |
|
RRM |
|
|
|
|
|
Average output rectified current (50% duty cycle):(4), (5) |
|
|
|
IO |
per diode |
20 |
A |
|
|
per device |
40 |
|
|
|
|
|
|
|
IF(RMS) |
Forward rms current (per diode) |
30 |
A |
|
TOP |
Operating temperature range(6) |
-65 to +175 |
°C |
|
(case temperature) |
||||
|
|
|
||
|
|
|
|
|
TJ |
Junction temperature |
+175 |
°C |
|
T |
Storage temperature range(6) |
-65 to +175 |
°C |
|
STG |
|
|
|
|
TSOL |
Soldering temperature: |
|
°C |
|
For TO-254(7) |
+260 |
|||
|
|
|||
dV/dt |
Critical rate of rise of reverse voltage |
10000 |
V/µs |
|
|
|
|
|
1.Sinusoidal pulse of 10 ms duration
2.Pulsed, duration 5 ms, F = 50 Hz
3.Pulsed, duration 2 µs, F = 1 kHz
4.For Tcase ≥ +132°C per device and Tcase ≥ +148°C per diode, derate linearly to 0 A at +175°C.
5.The “per device” ratings apply only when both anode terminals are tied together.
6.For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100% inert atmosphere.
7.Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed.
Table 3. |
Thermal resistance |
|
|
Symbol |
Characteristic |
Value |
Unit |
|
|
|
|
|
Thermal resistance, junction to case |
|
|
(1) |
per diode |
1.5 |
°C/W |
Rth(j-c) |
|||
|
per device |
1.2 |
|
|
|
|
|
1. Package mounted on infinite heatsink
2/9 |
Doc ID 17306 Rev 1 |
STPS40100HR |
|
|
Characteristics |
||||
|
|
|
|
|
|
|
|
|
s |
|
|
|
|
|
|
Table 4. |
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C |
|
|||||
Symbol |
Characteristic |
MIL-STD-750 |
Test conditions |
Values |
Units |
||
|
|
|
|||||
test method |
Min. |
|
Max. |
||||
|
|
|
|
|
|||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
IR1 |
Reverse current |
4016 |
DC method, VR = 100 V |
- |
|
30 |
µA |
IR2 |
DC method, VR = 50 V |
- |
|
5 |
µA |
||
|
|
|
|||||
VF1(1) |
|
|
Pulse method, IF = 5 A |
- |
|
610 |
mV |
VF2(1) |
Forward voltage |
4011 |
Pulse method, IF = 10 A |
- |
|
730 |
mV |
VF3(1) |
|
|
Pulse method, IF = 20 A |
- |
|
900 |
mV |
C |
Capacitance |
4001 |
VR = 10 V, F = 1 MHz |
- |
|
1 |
nF |
Zth(j-c)(2) |
Relative thermal impedance, |
3101 |
IH = 15 to 40 A, tH = 50 ms |
Calculate |
VF(3) |
°C/W |
|
|
junction to case |
|
IM = 50 mA, tmd = 100 µs |
|
|
|
|
1.Pulse width ≤ 300µs, duty cycle ≤ 2%
2.Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for VF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5. |
Electrical measurements at high and low temperatures (per diode) |
|
|
||||
Symbol |
Characteristic |
MIL-STD-750 |
Test conditions(1) |
Values |
Units |
||
|
|
||||||
test method |
Min. |
Max. |
|||||
|
|
|
|
||||
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
IR1 |
|
|
Tcase = +125 (+0, -5) °C |
- |
20 |
mA |
|
|
|
DC method, VR = 100 V |
|||||
|
Reverse current |
4016 |
|
|
|
||
IR2 |
Tcase = +125 (+0, -5) °C |
- |
7.5 |
mA |
|||
|
|
||||||
|
|
DC method, VR = 50 V |
|||||
|
|
|
|
|
|
||
VF2(2) |
|
|
Tcase = +125 (+0, -5) °C |
- |
660 |
mV |
|
|
|
|
pulse method, IF = 10 A |
|
|
|
|
|
Forward voltage |
4011 |
Tcase = +125 (+0, -5) °C |
- |
850 |
mV |
|
|
pulse method, IF = 20 A |
||||||
VF3(2) |
|
|
|
|
|
||
|
|
Tcase = -55 (+5, -0) °C |
- |
950 |
mV |
||
|
|
|
|||||
|
|
|
pulse method, IF = 20 A |
||||
|
|
|
|
|
|
||
1.Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a 100% inspection may be performed.
2.Pulse width ≤ 300µs, duty cycle ≤ 2%
Doc ID 17306 Rev 1 |
3/9 |
Loading...