ST STPS40100HR User Manual
Aerospace 2 x 20 A - 100 V Schottky rectifier
Features
■ Forward current: 2 x 20 A
■ Repetitive peak voltage: 100 V
■ Low forward voltage drop: 0.9 V
■ Maximum junction temperature: 175 °C
■ Negligible switching losses
■ Low capacitance
■ High reverse avalanche surge capability
■ Hermetic packages
■ Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■ ESCC qualified
STPS40100HR
TO-254
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. Housed in
hermetically sealed packages both surface mount
and through hole, it is ideal for use in applications
for aerospace and other harsh environments.
The STPS40100HR is intended for use in medium
voltage application and particularly, in high
frequency circuits where low switching losses and
low noise are required.
Table 1. Device summary
Order code
STPS40100C2FSY1 -
STPS40100C2FSYHR 5106/019/01 ESCC flight Y
ESCC detailed
specification
Quality level Configuration Package Mass EPPL
Engineering
model
Double die,
common cathode
pin 2
T0-254 10.0 g
-
March 2010 Doc ID 17306 Rev 1 1/9
www.st.com
9
Characteristics STPS40100HR
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Characteristic Value Unit
(6)
(6)
(3)
(2)
(1)
300 A
100 V
1A
(4), (5)
20
40
-65 to +175 °C
-65 to +175 °C
+260
> +125 °C are carried out in a 100%
amb
A
°C
V
I
FSM
I
RRM
RRM
Forward surge current (per diode)
Repetitive peak reverse voltage
Repetitive peak reverse current
Average output rectified current (50% duty cycle):
I
O
per diode
per device
I
F(RMS)
T
OP
T
T
STG
T
SOL
Forward rms current (per diode) 30 A
Operating temperature range
(case temperature)
Junction temperature +175 °C
J
Storage temperature range
Soldering temperature:
For TO-254
(7)
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For T
5. The “per device” ratings apply only when both anode terminals are tied together.
6. For devices with hot solder dip lead finish all testing performed at T
inert atmosphere.
7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
≥ +132°C per device and T
case
≥ +148°C per diode, derate linearly to 0 A at +175°C.
case
Table 3. Thermal resistance
Symbol Characteristic Value Unit
Thermal resistance, junction to case
(1)
R
th(j-c)
per diode
per device
1. Package mounted on infinite heatsink
2/9 Doc ID 17306 Rev 1
1.5
1.2
°C/W
STPS40100HR Characteristics
Table 4. Electrical measurements at ambiant temperature (per diode), T
Symbol Characteristic
I
R1
I
R2
(1)
V
F1
(1)
V
F2
(1)
V
F3
C Capacitance 4001 V
Z
th(j-c)
1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol Characteristic
s
Reverse current 4016
Forward voltage 4011
Relative thermal impedance,
(2)
junction to case
limits specified in maximum ratings.
th(j-c)
MIL-STD-750
test method
3101
MIL-STD-750
test method
= 22 ±3 °C
amb
Values
Test conditions
Min. Max.
DC method, VR = 100 V - 30 µA
DC method, VR = 50 V - 5 µA
Pulse method, I
= 5 A - 610 mV
F
Pulse method, IF = 10 A - 730 mV
Pulse method, IF = 20 A - 900 mV
= 10 V, F = 1 MHz - 1 nF
R
= 15 to 40 A, tH = 50 ms
I
H
IM = 50 mA, tmd = 100 µs
Test conditions
(1)
Calculate ΔV
Values
(3)
F
Min. Max.
Units
°C/W
Units
T
= +125 (+0, -5) °C
I
R1
case
DC method, VR = 100 V
-20mA
Reverse current 4016
T
= +125 (+0, -5) °C
I
R2
(2)
V
F2
Forward voltage 4011
(2)
V
F3
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%
case
DC method, VR = 50 V
= +125 (+0, -5) °C
T
case
pulse method, IF = 10 A
T
= +125 (+0, -5) °C
case
pulse method, IF = 20 A
T
= -55 (+5, -0) °C
case
pulse method, IF = 20 A
-7.5mA
-660mV
-850mV
-950mV
Doc ID 17306 Rev 1 3/9
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