ST STPS3L40-Y User Manual
Features
■ Negligible switching losses
■ Low thermal resistance
■ Low forward voltage drop
■ Avalanche capability specified
■ ECOPACK
■ AEC-Q101 qualified
®
2 compliant component
STPS3L40-Y
Automotive power Schottky rectifier
A
K
SMC
STPS3L40SY
Description
Schottky rectifier suited for switched mode power
supplies and high frequency DC to DC
converters. Packaged in SMC, this device is
intended for use in DC/DC chargers for
automotive application.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 150 °C
T
j
V
(max) 0.44 V
F
3 A
40 V
March 2011 Doc ID 018562 Rev 1 1/7
www.st.com
7
Characteristics STPS3L40-Y
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
P
ARM
T
stg
T
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Repetitive peak reverse voltage 40 V
Average forward current TL = 120 °C δ = 0.5 3 A
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1300 W
Storage temperature range -65 to + 175 °C
Operating junction temperature range
j
1
<
Rth(j-a)
(1)
-40 to +150 °C
Symbol Parameter Value Unit
R
Table 4. Static electrical characteristics
Junction to lead 18 °C/W
th(j-l)
Symbol Parameter Test conditions Typ. Max. Unit
T
(1)
I
R
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
(1)
Forward voltage drop
F
= 25 °C
j
T
= 125 °C 16 40 mA
j
= 25 °C
T
j
T
= 125 °C 0.40 0.44
j
T
= 25 °C
j
= 125 °C 0.52 0.58
T
j
= V
V
R
= 3 A
I
F
IF = 6 A
RRM
100 µA
0.5
0.62
V
To evaluate the conduction losses use the following equation:
P = 0.30 x I
2/7 Doc ID 018562 Rev 1
F(AV)
+ 0.047 I
F2(RMS)
STPS3L40-Y Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
2.0
1.6
1.2
0.8
0.4
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Non repetitive surge peak forward
current versus overload duration
Figure 2. Average forward current versus
ambient temperature (δ = 0.5) - SMC
I (A)
F(AV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
δ
=tp/T
R =75°C/W
th(j-a)
T
tp
R=R
th(j-a) th(j-l)
T (°C)
amb
SMC
Figure 4. Normalized avalanche power
derating versus pulse duration
(maximum values)
I (A)
M
14
12
10
8
6
4
IM
2
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
T =75°C
T =125°C
a
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
SMC
a
a
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
SMC
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
δ
=tp/T
T
tp
Doc ID 018562 Rev 1 3/7
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