ST STPS340 User Manual

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

(max) 0.57 V

V

F

3 A

40 V

STPS340

Power Schottky rectifier

K

A

NC

DPAK

STPS340B

Features and Benefits

■ Very small conduction losses

■ Negligible switching losses

■ Low forward voltage drop

■ Low thermal resistance

■ Extremely fast switching

■ Surface mounted device

■ Avalanche capability specified

Description

Single chip Schottky rectifier suited for switch
mode power supplies and high frequency DC to
DC converters.

Packaged in DPAK, SMC, SMB, and low profile
SMB, this device is intended for use in low and
medium voltage operation, high frequency
inverters, free wheeling and polarity protection
applications where low switching losses are
required.

A

K

SMB

STPS340U

K

SMB flat

STPS340UF

Order codes

Part Number Marking

STPS340U U34

STPS340S S34

STPS340B S340

A

K

SMC

STPS340S

A

STPS340B-TR S340

STPS340UF FU34

February 2007 Rev 9 1/11

www.st.com

11

Characteristics STPS340

1 Characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 2. Thermal resistance

Repetitive peak reverse voltage 40 V

RRM

RMS forward current DPAK 6 A

T

= 135° C δ = 0.5 DPAK

c

Average forward current

Surge non repetitive forward current tp =10 ms sinusoidal 75 A

FSM

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1300 W

ARM

Storage temperature range -65 to + 150 °C

stg

Operating junction temperature

T

j

dPtot

--------------­dTj

1

--------------------------

<

Rth j a–()

= 105° C δ = 0.5 SMB/SMC

L

T

= 115° C δ = 0.5 SMB flat

L

(1)

3AT

150 °C

Symbol Parameter Value Unit

SMB 25

R

th(j-l)

Junction to lead

°C/WSMB flat 15

SMC 20

th(j-c)

Junction to case DPAK 5.5 °C/W

R

Table 3. Static electrical characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 25° C

T

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

j

= 125° C 2 10 mA

T

j

= 25° C

T

j

T

= 125° C 0.52 0.57

j

= 25° C

T

j

T

= 125° C 0.63 0.72

j

To evaluate the conduction losses use the following equation:
P = 0.42 x I

2/11

F(AV)

+ 0.050 I

F2(RMS)

V

R

= 3 A

I

F

= 6 A

I

F

= V

20 µA

RRM

0.63

V

0.84

STPS340 Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per
diode)

P (W)

F(AV)

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Average forward current versus

ambient temperature (δ = 0.5, per
diode) (SMB flat)

I (A)

F(AV)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 25 50 75 100 125 150

δ

=tp/T

T

tp

R=R

th(j-a) th(j-l)

T (°C)

amb

SMB flat

R =40°C/W

th(j-a)

. S =2.5 cm

CU

2

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values) (SMB)

I (A)

M

10

9

8

7

6

5

4

3

2

IM

1

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

SMB

T =25°C

a

T =75°C

a

T =125°C

a

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per
diode) (DPAK / SMB / SMC)

I (A)

F(AV)

3.5

3.0

2.5

R =65°C/W

δ

=tp/T

th(j-a)

T

tp

2.0

1.5

1.0

0.5

0.0

0 25 50 75 100 125 150

R=R

th(j-a) th(j-l)

T (°C)

amb

DPAK

SMB / SMC

Figure 4. Non repetitive surge peak forward

current versus overload duration
(maximum values) (DPAK)

I (A)

M

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

DPAK

T =25°C

c

T =75°C

c

T =125°C

c

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values) (SMC)

I (A)

M

12

11

10

9

8

7

6

5

4

3

IM

2

1

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

SMC

T =25°C

a

T =75°C

a

T =125°C

a

3/11

Characteristics STPS340

Figure 7. Non repetitive surge peak forward

current versus overload duration
(maximum values) SMB flat

I (A)

M

25

20

15

10

5

IM

t

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t(s)

SMB flat

T =25°C

L

T =75°C

L

T =125°C

L

Figure 9. Normalized avalanche power

derating versus junction
temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 11. Relative variation of thermal

impedance junction to ambient
versus pulse duration (SMB)

Z/R

th(j-a) th(j-a)

1.0

SMB

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

δ

=tp/T

T

tp

Figure 8. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 10. Relative variation of thermal

impedance junction to ambient
versus pulse duration (DPAK)

Z/R

th(j-a) th(j-a)

1.0

DPAK

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

T

=tp/T

Figure 12. Relative variation of thermal

impedance junction to ambient
versus pulse duration (SMC)

Z/R

th(j-a) th(j-a)

1.0

SMC

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

δ

T

=tp/T

tp

tp

4/11