ST STPS30U100DJF User Manual

STPS30U100DJF

ULVF™ power Schottky rectifier

Features

■ High current capability

■ Ultralow forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ High integration

Description

The STPS30U100DJF is a power Schottky
rectifier featuring an ultralow forward voltage drop
(ULVF), suited for high frequency switch mode
power supply and DC to DC converters.

Packaged in PowerFLAT™, this device is
intended to be used in notebook, game station
and desktop adapters, providing these
applications with good efficiency at both low and
high load. Its low profile was especially designed
to be used in applications with space-saving
constraints.

A

A

K

A

PowerFLAT 5x6

STPS30U100DJF

Table 1. Device summary

Symbol Value

K

K

A

I

F(AV)

V

RRM

(max) 150 °C

T

j

V

(typ) 0.69 V

F

TM: ULVF and PowerFLAT are trademarks of

STMicroelectronics

30 A

100 V

May 2011 Doc ID 18121 Rev 3 1/8

www.st.com

8

Characteristics STPS30U100DJF

1 Characteristics

Table 2. Absolute ratings (limiting values, anode terminals short circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 45 A

Average forward current Tc = 75°C, δ = 0.5 30 A

Surge non repetitive forward current tp = 10 ms sine-wave 200 A

FSM

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

(1)

150 °C

R

Table 4. Static electrical characteristics (anode terminals short circuited)

Junction to case 2.5 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 125 °C VR = 70 V - 8 - mA

T

j

(1)

I

V

Reverse leakage current

R

(2)

Forward voltage drop

F

T

= 25 °C

j

= 125 °C - 20 45 mA

T

j

= 125 °C IF = 5 A - 0.38 0.42

T

j

T

= 125 °C IF = 10 A - 0.475 0.53

j

= 25 °C

T

j

Tj = 125 °C - 0.69 0.77

VR = V

= 30 A

I

F

RRM

--170µA

- - 0.855

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:
P = 0.590 x I

+ 0.006 x I

F(AV)

F2(RMS)

V

2/8 Doc ID 18121 Rev 3

STPS30U100DJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current
(maximum values)

P (W)

F(AV)

35.0

T = 75 °C

30.0

25.0

20.0

c

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ = 1

15.0

10.0

δ = t / T

p

T

t

p

5.0

0.0

I (A)

F(AV)

0 5 10 15 20 25 30 35 40

Figure 3. Non repetitive surge peak forward

current versus overload duration
(maximum values)

I (A)

M

180

160

140

120

100

80

60

40

I

M

20

0

δ = 0.5

t

1.E-03 1.E-02 1.E-01 1.E+00

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

30

R

th th

(j-a)

= R

(j-c)

25

20

15

10

δ = t / T

p

T

t

p

T (°C)

amb

5

0

0 25 50 75 100 125 150

Figure 4. Relative variation of thermal

impedance, junction to case,
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3
Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 5. Reverse leakage current versus

reverse voltage applied
(typical values)

I (mA)

R

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03
0 10 2030405060708090100

T = 150 °C

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

Figure 6. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

10000

1000

V (V)

R

100

1 10 100

Doc ID 18121 Rev 3 3/8

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

V (V)

R