ST STPS30SM60S User Manual
STPS30SM60S
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
The STPS30SM60S is a single Schottky diode,
suited for high frequency switch mode power
supply.
Packaged in TO-220AB, I
device is intended to be used in notebook, game
station and desktop adapters, providing in these
applications a good efficiency at both low and
high load.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(typ) 0.405 V
V
F
(max) 150 °C
T
j
2
PAK and D2PAK, this
30 A
60 V
A
K
2
PAK
A
K
A
K
A
2
PAK
D
STPS30SM60SG-TR
K
A
K
A
K
I
STPS30SM60SR
TO-220AB
STPS30SM60ST
Figure 1. Electrical characteristics
2 x I
O
I
"Forward"
X
V
I
A
A
(a)
I
F
I
V
RRM
V
V
a. V
ARM
operating area defined in Figure 12. V
pulse measurements (t
are static characteristics
AR
and I
R
"Reverse"
must respect the reverse safe
ARM
O
< 1 µs). VR, IR, V
p
I
R
V
To
I
AR
V
F(Io)
X
V
V
F(2xIo)
F
and IAR are
AR
and VF,
RRM
V
October 2011 Doc ID 022029 Rev 1 1/9
www.st.com
9
Characteristics STPS30SM60S
1 Characteristics
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at
25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
2. See Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 60 V
RRM
Forward rms current 90 A
Average forward current, δ = 0.5 Tc = 125 °C Per package 30 A
Surge non repetitive forward current tp = 10 ms sine-wave 600 A
FSM
(1)
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 28000 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum single-pulse
(2)
peak avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
<
Rth(j-a)
1
dPtot
dTj
t
< 1 µs, Tj < 150 °C, IAR < 105 A 80 V
p
< 1 µs, Tj < 150 °C, IAR < 105 A 80 V
t
p
(3)
150 °C
Symbol Parameter Value Unit
th(j-c)
Junction to case 1.0 °C/W
R
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
= 25 °C
j
= 125 °C - 20 80 mA
T
j
Tj = 25 °C
= 125 °C - 0.405 0.450
T
j
= 25 °C
T
j
= 125 °C - 0.500 0.570
T
j
V
= V
R
I
= 15 A
F
I
= 30 A
F
RM
- 30 135 µA
- 0.490 0.530
- 0.560 0.615
V
To evaluate the conduction losses use the following equation:
P = 0.440 x I
2/9 Doc ID 022029 Rev 1
+ 0.0043 x I
F(AV)
F2(RMS)
STPS30SM60S Characteristics
Figure 2. Average forward power dissipation
versus average forward current
P (W)
F(AV)
28
24
20
16
12
8
4
0
0 4 8 12 16 20 24 28 32 36 40 44
δ = 0.05
δ = 0.1
δ = 0.2
δ = t / T
p
δ = 0.5
T
t
p
δ = 1
I (A)
F(AV)
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1µs)
ARM
1
0.1
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
35
R
= R
th(j-a)
T (°C)
amb
th(j-c)
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
0.8
0.01
t (µs)
0.001
0.10.01 1
10 100
p
1000
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values)
I (A)
M
400
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
t
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
0.6
0.4
0.2
0
25 50 75 100 125
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
T (°C)
j
t (s)
p
150
Doc ID 022029 Rev 1 3/9
Loading...