ST STPS30SM60C User Manual

STPS30SM60C

Power Schottky rectifier

Features

■High current capability

■Avalanche rated

■Low forward voltage drop

■High frequency operation

Description

The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode power supply.

Packaged in TO-220AB, I2PAK and D2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 15 A
	VRRM		60 V
	VF (typ)		0.405 V
	Tj (max)		150 °C

A1
	K
A2
K	K
A2	A2
K	A1
A1
I2PAK	D2PAK
STPS30SM60CR	STPS30SM60CG-TR
K
	A2
	K
	A1
TO-220AB
STPS30SM60CT

Figure 1. Electrical characteristics(a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

a. VARM and IARM must respect the reverse safe operating area defined in Figure 12. VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics

November 2011

Doc ID 022023 Rev 1

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Characteristics	STPS30SM60C

1 Characteristics

Table 2.		Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
		otherwise specified)
Symbol			Parameter							Value	Unit
VRRM		Repetitive peak reverse voltage								60	V
IF(RMS)		Forward rms current								40	A
IF(AV)		Average forward current, δ = 0.5			Tc = 130 °C				Per diode	15	A
					Tc = 130 °C				Per device	30
	IFSM	Surge non repetitive forward current			tp = 10 ms sine-wave					300	A
P	(1)	Repetitive peak avalanche power			T	j	= 25 °C, t	p	= 1 µs	14400	W
ARM
	(2)	Maximum repetitive peak
VARM		avalanche voltage	tp < 1 µs, Tj < 150 °C, IAR < 54 A							80	V
	(2)	Maximum single-pulse
VARM		peak avalanche voltage	tp < 1 µs, Tj < 150 °C, IAR < 54 A							80	V
	Tstg	Storage temperature range								-65 to +175	°C
	Tj	Maximum operating junction temperature(3)								150	°C

1.For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.See Figure 12

3. dPtot <		1		condition to avoid thermal runaway for a diode on its own heatsink
		Rth(j-a)
dTj
Table 3.		Thermal parameters
Symbol				Parameter		Value	Unit
Rth(j-c)		Junction to case			per diode	1.5	°C/W
					total	0.85
Rth(c)		Coupling				0.2	°C/W

When the two diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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	STPS30SM60C						Characteristics
	Table 4.	Static electrical characteristics (per diode)
	Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
	IR(1)	Reverse leakage current	Tj = 25 °C	VR = VRRM	-	15	65	µA
			Tj = 125 °C		-	10	40	mA
			Tj = 25 °C	IF = 7.5 A	-	0.495	0.535
	VF(2)	Forward voltage drop	Tj = 125 °C		-	0.405	0.455	V
			Tj = 25 °C	IF = 15 A	-	0.565	0.625
			Tj = 125 °C		-	0.505	0.570

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.415 x IF(AV) + 0.0103 x IF2(RMS)

Figure 2. Average forward power dissipation Figure 3.	Average forward current versus
versus average forward current	ambient temperature
(per diode)	(δ = 0.5, per diode)

16 PF(AV)(W)

14

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

12

10

8

6

4
T
2
δ = tp / T	tp	IF(AV)(A)
0

0

2

4

6

8

10

12

14

16

18

20

22

18 IF(AV)(A)

16		Rth(j-a) = Rth(j-c)

14

12

10

8

6

4

2

Tamb(°C)

0

0

25

50

75

100

125

150

Figure 4. Normalized avalanche power derating versus pulse duration

Figure 5. Normalized avalanche power derating versus junction temperature

PARM(tp)						PARM(Tj)
PARM(1µs)						PARM(25 °C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001					tp(µs)	0					Tj(°C)
					1000						150
0.01	0.1	1	10	100		25	50	75	100	125

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