STPS30SM60C
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
The STPS30SM60C is a dual diode Schottky
rectifier, suited for high frequency switch mode
power supply.
Packaged in TO-220AB, I
device is intended to be used in notebook, game
station and desktop adapters, providing in these
applications a good efficiency at both low and
high load.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(typ) 0.405 V
V
F
(max) 150 °C
T
j
2
PAK and D2PAK, this
2 x 15 A
60 V
A1
K
A2
K
K
A2
K
A1
2
PAK
I
STPS30SM60CR
STPS30SM60CG-TR
A1
2
PAK
D
K
A2
K
A1
TO-220AB
STPS30SM60CT
Figure 1. Electrical characteristics
2 x I
O
I
"Forward"
X
V
I
A2
(a)
I
F
I
V
RRM
V
V
a. V
ARM
operating area defined in Figure 12. V
pulse measurements (t
are static characteristics
AR
and I
R
"Reverse"
must respect the reverse safe
ARM
O
< 1 µs). VR, IR, V
p
I
R
V
To
I
AR
V
F(Io)
X
V
V
F(2xIo)
F
and IAR are
AR
and VF,
RRM
V
November 2011 Doc ID 022023 Rev 1 1/10
www.st.com
10
Characteristics STPS30SM60C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode, at T
otherwise specified)
Symbol Parameter Value Unit
= 25 °C unless
amb
V
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ARM
T
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Repetitive peak reverse voltage 60 V
RRM
Forward rms current 40 A
T
= 130 °C Per diode 15
Average forward current, δ = 0.5
c
= 130 °C Per device 30
T
c
Surge non repetitive forward current tp = 10 ms sine-wave 300 A
(1)
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 14400 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum single-pulse
(2)
peak avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
< 1 µs, Tj < 150 °C, IAR < 54 A 80 V
t
p
< 1 µs, Tj < 150 °C, IAR < 54 A 80 V
t
p
(3)
150 °C
Symbol Parameter Value Unit
R
R
Junction to case
th(j-c)
Coupling 0.2 °C/W
th(c)
per diode 1.5
total 0.85
°C/W
A
When the two diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode 1) x R
j
2/10 Doc ID 022023 Rev 1
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS30SM60C Characteristics
)
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
= 380 µs, δ < 2%
p
= 25 °C
T
j
= 125 °C - 10 40 mA
T
j
Tj = 25 °C
= 125 °C - 0.405 0.455
T
j
= 25 °C
T
j
= 125 °C - 0.505 0.570
T
j
V
= V
R
I
= 7.5 A
F
I
= 15 A
F
RRM
-1565µA
- 0.495 0.535
- 0.565 0.625
To evaluate the conduction losses use the following equation:
P = 0.415 x I
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
δ = 0.05
δ = 0.1
Figure 4. Normalized avalanche power
derating versus pulse duration
+ 0.0103 x I
F(AV)
δ = 0.2
T
δ = t / T
p
F2(RMS)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I(A
F(AV)
18
δ = 0.5
t
p
δ = 1
I (A)
F(AV)
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
R
th(j-a)
T (°C)
amb
= R
th(j-c)
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(tp)
P (1µs)
ARM
1
ARM
P (25 °C)
1.2
1
P(T)
ARM j
ARM
V
0.1
0.01
0.001
0.10.01 1
10 100
t (µs)
p
1000
0.8
0.6
0.4
0.2
0
25 50 75 100 125
T (°C)
j
150
Doc ID 022023 Rev 1 3/10
Loading...