ST STPS30SM60 User Manual

Features

STPS30SM60

Power Schottky rectifier

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ High frequency operation

Description

The STPS30SM60D is a single diode Schottky rectifier, suited for high frequency switch mode power supply.

Packaged in TO-220AC,this device is intended to be used in notebook, game station and desktop adapters, providing in these aplications a good efficiency at both low and high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(typ) 0.410 V

V

F

(max) 150 °C

T

j

30 A

60 V

A

K

A

K

TO-220AC

STPS30SM60D

Figure 1. Electrical characteristics

2 x I

I

"Forward"

F(Io)

X

V

F

O

I

F

I

O

I

R

V

To

V

I

V

RRM

V

AR

R

"Reverse"

(a)

V

F(2xIo)

V

I

AR

a. V

and I

ARM

operating area defined in Figure 11. V pulse measurements (t are static characteristics

must respect the reverse safe

ARM

< 1 µs). VR, IR, V

p

and IAR are

AR

and VF,

RRM

October 2011 Doc ID 022053 Rev 1 1/7

www.st.com

7

Characteristics STPS30SM60

1 Characteristics

Table 2. Absolute ratings (limiting values, at T

specified)

Symbol Parameter Value Unit

= 25 °C unless otherwise

amb

V

I

F(RMS)

I

F(AV)

I

P

ARM

V

ARM

V

ASM

T

1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the

2. See Figure 11

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 60 A

Average forward current, δ = 0.5 Tc = 125 °C 30 A

Surge non repetitive forward current tp = 10 ms sine-wave 400 A

FSM

(1)

Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 28000 W

Maximum repetitive peak

(2)

avalanche voltage

Maximum repetitive peak

(2)

avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

<

Rth(j-a)

1

dPtot

dTj

t

< 1 µs, Tj < 150 °C, IAR < 105 A 80 V

p

< 1 µs, Tj < 150 °C, IAR < 105 A 80 V

t

p

(3)

150 °C

Symbol Parameter Value Unit

th(j-c)

Junction to case 1.0 °C/W

R

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

F

= 25 °C

j

= 125 °C - 20 80 mA

T

j

Tj = 25 °C

= 125 °C - 0.410 0.470

T

j

= 25 °C

T

j

= 125 °C - 0.515 0.600

T

j

V

= V

R

I

= 15 A

F

I

= 30 A

F

RRM

- 30 135 µA

- 0.500 0.540

- 0.570 0.640

V

To evaluate the conduction losses use the following equation: P = 0.435 x I

2/7 Doc ID 022053 Rev 1

+ 0.0055 x I

F(AV)

F2(RMS)

STPS30SM60 Characteristics

Figure 2. Average forward power dissipation

versus average forward current

P (W)

F(AV)

28

24

20

16

12

8

4

0

0 4 8 1216202428323640

δ = 0.05

δ = 0.1

δ = 0.2

δ = t / T

p

δ = 0.5

T

t

p

δ = 1

I (A)

F(AV)

Figure 4. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

0.1

Figure 3. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

R

= R

th(j-a)

30

25

20

15

10

5

0

0 25 50 75 100 125 150

th(j-c)

T (°C)

amb

Figure 5. Normalized avalanche power

derating versus junction temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.8

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)

M

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ = 0.5

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

0.6

0.4

0.2

0

25 50 75 100 125

Figure 7. Relative thermal impedance

junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

T (°C)

t (s)

p

j

150

Doc ID 022053 Rev 1 3/7