ST STPS30SM120S User Manual

STPS30SM120S

Power Schottky rectifier

Datasheet − production data

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ High frequency operation

Description

This Schottky diode is suited for high frequency switch mode power supply.

2

Packaged in TO-220AB narrow leads and I this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.

Figure 1. Electrical characteristics

2 x I

I

"Forward"

O

V

I

PA K,

(a)

X

A

K

A

K

TO-220AB narrow leads

STPS30SM120STN

Table 1. Device summary

STPS30SM120SR

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.47 V

V

F

K

A

K

I2PAK

30 A

120 V

I

F

I

V

RRM

V

a. V

ARM

operating area defined in Figure 9. V pulse measurements (t V

, are static characteristics

F

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 10 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

AR

X

V

F(2xIo)

F

and IAR are

and

RRM

April 2012 Doc ID 022919 Rev 1 1/8

This is information on a product in full production.

www.st.com

8

Characteristics STPS30SM120S

1 Characteristics

Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at

T

= 25 °C, unless otherwise specified)

amb

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”.

2. See Figure 9

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 50 A Average forward current, δ = 0.5 Tc = 110 °C 30 A

Surge non repetitive forward current tp = 10 ms sine-wave 240 A

(1)

Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 1200 W

Maximum repetitive peak

(2)

avalanche voltage

Maximum single-pulse

(2)

peak avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

t

< 10 µs, Tj < 125 °C, IAR < 8 A 150 V

p

< 10 µs, Tj < 125 °C, IAR < 8 A 150 V

t

p

(3)

150 °C

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)

Junction to case 1.35 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

R

current

Reverse leakage

(1)

I

= 25 °C

j

= 125 °C - 20 50 mA

T

j

V

= V

R

RRM

- 55 275 µA

Tj = 125 °C IF = 5 A - 0.47 0.52

= 10 A

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

T

= 125 °C

j

T

= 25 °C

j

= 125 °C - 0.60 0.65

T

j

= 25 °C

T

j

= 125 °C - 0.68 0.76

T

j

I

F

I

= 15 A

F

I

= 30 A

F

- 0.55 0.60

-0.79

-0.95

V

To evaluate the conduction losses use the following equation: P = 0.56 x I

2/8 Doc ID 022919 Rev 1

+ 0.0067 x I

F(AV)

F2(RMS)

STPS30SM120S Characteristics

Figure 2. Average forward power dissipation

versus average forward current

P (W)

F(AV)

35

30

25

20

15

10

δ = 0.05

δ = 0.2

δ = 0.1

δ = 0.5

δ = 1

T

5

0

0 5 10 15 20 25 30 35 40

δ = t / T

p

t

p

I (A)

F(AV)

Figure 4. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (10 µs)

ARM

1

0.1

0.01

t (µs)

0.001

p

1 10 100 1000

Figure 6. Reverse leakage current versus

reverse voltage applied (typical values)

I (mA)

R

1.E+02

Tj=150°C

1.E+01

1.E+00

1.E-01

1.E-02

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

Figure 3. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

30

25

20

15

10

5

0

0 25 50 75 100 125 150

R

th(j-a)

T (°C)

amb

= R

th(j-c)

Figure 5. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 7. Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

10000

1000

V

F=1MHz

osc

Tj=25°C

=30mV

RMS

1.E-03 0 102030405060708090100110120

V (V)

R

100

1 10 100 1000

V (V)

R

Doc ID 022919 Rev 1 3/8