ST STPS30M80C User Manual

STPS30M80C

Power Schottky rectifier

Features

■ High junction temperature capability

■ Optimized trade-off between leakage current

and forward voltage drop

■ Low leakage current

■ Avalanche capability specified

■ Insulated package TO-220FPAB

– insulated voltage: 2000 V
– package capacitance: 45 pF

Description

This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.

Packaged in TO-220AB, I
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(typ) 0.490 V

V

F

2

PAK, D2PAK and TO-

2 x 15 A

80 V

A1

K

A2

K

K

A2

K

A1

I2PAK

STPS30M80CR

A1

2

PAK

D

STPS30M80CG-TR

K

A1

K

A2

TO-220FPAB

STPS30M80CFP

K

A1

TO-220AB

STPS30M80CT

A2

Figure 1. Electrical characteristics

2 x I

I

"Forward"

F(Io)

X

X

V

F

O

I

F

I

O

I

R

V

V

To

V

I

V

RRM

V

V

AR

R

"Reverse"

(a)

V

F(2xIo)

A2

V

I

AR

a. V

and I

ARM

operating area defined in Figure 13. V
pulse measurements (t
are static characteristics

must respect the reverse safe

ARM

< 1 µs). VR, IR, V

p

and IAR are

AR

and VF,

RRM

April 2011 Doc ID 018722 Rev 1 1/11

www.st.com

11

Characteristics STPS30M80C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, at T

otherwise specified)

Symbol Parameter Value Unit

= 25 °C unless

amb

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.

2. See Figure 13

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 80 V

RRM

Forward rms current 30 A

T

TO-220AB,

Average forward current,
δ = 0.5

2

PAK, D2PA K

I

TO-220FPAB T

Surge non repetitive
forward current

(1)

Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 9500 W

Maximum repetitive peak

(2)

avalanche voltage

T

Maximum operating junction temperature

j

<

Rth(j-a)

1

dPtot

dTj

t

= 10 ms sinusoidal Tc = 25 °C 220 A

p

t

< 1 µs, Tj < 150 °C, IAR < 28.2 A 100 V

p

= 155 °C

c

= 150 °C

T

c

= 110 °C Per diode 15

c

(3)

Per diode
Per device

15
30

175 °C

Symbol Parameter Value Unit

per diode 1.60

total 0.88

per diode 5.20

total 4.15

0.15

°C/W

°C/W

R

R

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB
I2PA K , D2PA K

TO-220FPAB

TO-220AB

2

PA K , D2PA K

I

TO-220FPAB 3.10

A

When the two diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode 1) x R

j

2/11 Doc ID 018722 Rev 1

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STPS30M80C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

j

= 125 °C - 7 25 mA

T

j

T

= 25 °C

j

= 125 °C - 0.490 0.530

T

j

= 25 °C

T

j

= 125 °C - 0.575 0.625

T

j

= 25 °C

T

j

= 125 °C - 0.680 0.795

T

j

V

= 80 V

R

I

= 7.5 A

F

I

= 15 A

F

I

= 30 A

F

- 8 40 µA

- 0.570 0.620

- 0.675 0.745

- 0.815 0.910

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation:
P = 0.455 x I

Figure 2. Average forward power dissipation

versus average forward current
(per diode)

P (W)

F(AV)

14

12

10

8

6

4

2

0

0 2 4 6 8 101214161820

δ = 0.05

δ = 0.1

Figure 4. Normalized avalanche power

derating versus pulse duration

+ 0.0113 x I

F(AV)

δ = 0.2

δ = t / T

F2(RMS)

Figure 3. Average forward current versus

ambient temperature
(δ = 0.5, per diode)

I (A)

F(AV)

δ = 0.5

T

t

p

p

δ = 1

I (A)

F(AV)

18

R

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150 175

= R

th(j-a)

th(j-c)

TO-220FPAB

T (°C)

amb

22

TO-220AB / I PAK / D PAK

Figure 5. Normalized avalanche power

derating versus junction
temperature

P(tp)

P (1µs)

ARM

1

ARM

P (25 °C)

1.2

1

P(T)

ARM j

ARM

V

0.1

0.01

0.001

0.10.01 1

10 100

0.8

0.6

0.4

0.2

T (°C)

t (µs)

p

1000

0

25 50 75 100 125

j

150

Doc ID 018722 Rev 1 3/11

Characteristics STPS30M80C

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

200

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ = 0.5

TO-220AB / I PAK / D PAK

22

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 8. Relative thermal impedance

junction to case versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

TO-220AB / I PAK / D PAK

22

t (s)

p

Figure 10. Reverse leakage current versus

reverse voltage applied
(typical values, per diode)

I (µA)

R

1.E+05

T = 150 °C

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00
0 1020304050607080

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

V (V)

R

Figure 7. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

110

100

90

80

70

60

50

40

30

I

M

20

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

TO-220FPAB

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 9. Relative thermal impedance

junction to case versus pulse
duration (TO-220FPAB)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3
Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

TO-220FPAB

t (s)

p

Figure 11. Junction capacitance versus

reverse voltage applied
(typical values, per diode)

C(pF)

10000

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

1000

V (V)

100

1 10 100

R

4/11 Doc ID 018722 Rev 1