ST STPS160-Y User Manual
Features
STPS160-Y
Automotive power Schottky rectifier
Datasheet − production data
■ Very small conduction losses
■ Negligible switching losses
■ Low forward voltage drop
■ Surface mount miniature packages
■ Avalanche capability specified
■ ECOPACK
■ AEC-Q101 qualified
®
2 compliant components
Description
Single chip Schottky rectifiers suited to switched
mode power supplies and high frequency DC to
DC converters.
Packaged in SMA and SMB, this device is
especially intended for surface mounting and
used in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
application.
A
K
SMA
(JEDEC DO-214AC)
STPS160AY
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j (max)
V
F (max)
(JEDEC DO-214AA)
A
K
SMB
STPS160UY
1 A
60 V
150 °C
0.57 V
June 2012 Doc ID 023383 Rev 1 1/9
This is information on a product in full production.
www.st.com
9
Characteristics STPS160-Y
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 60 V
RRM
Average forward current TL = 130 °C, δ = 0.5 1 A
Surge non repetitive forward current tp =10 ms sinusoidal 75 A
FSM
Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A
RRM
Non repetitive peak reverse current tp = 100 µs square 1 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400 W
ARM
Storage temperature range -65 to + 150 °C
stg
T
Operating junction temperature range
j
(1)
-40 to + 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Symbol Parameter Value Unit
SMA 30
R
th(j-l)
Junction to lead
SMB 23
°C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25 °C
j
= 125 °C 1.1 4 mA
T
j
= 25 °C
T
j
T
= 125 °C 0.49 0.57
j
= 25 °C
T
j
T
= 125 °C 0.58 0.65
j
V
R
I
= 1 A
F
= 2 A
I
F
= V
RRM
4µA
0.67
0.8
V
To evaluate the conduction losses use the following equation:
P = 0.49 x I
2/9 Doc ID 023383 Rev 1
F(AV)
+ 0.08 I
F2(RMS)
STPS160-Y Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
1.2
R=R
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
δ
T
=tp/T
SMA
R =100°C/W
th(j-a)
2
S =1.5cm
(CU)
SMB
R =80°C/W
S =1.5cm
T (°C)
tp
amb
th(j-a) th(j-I)
th(j-a)
2
(CU)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
I (A)
M
8
7
6
5
4
3
2
IM
1
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
a
T =50°C
a
T =100°C
a
Doc ID 023383 Rev 1 3/9
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
I (A)
M
8
7
6
5
4
3
2
IM
1
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
a
T =50°C
a
T =100°C
a
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