ST STPS160 User Manual

Features

STPS160

Power Schottky rectifier

■ Very small conduction losses

■ Negligible switching losses

■ Low forward voltage drop

■ Surface mount miniature packages

■ Avalanche capability specified

Description

Single chip Schottky rectifiers suited to switched mode power supplies and high frequency DC to DC converters.

Packaged in SMA and SMB, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A

K

SMA

(JEDEC DO-214AC)

STPS160A

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

V

F (max)

(JEDEC DO-214AA)

A

K

SMB

STPS160U

1 A

60 V

150 °C

0.57 V

March 2010 Doc ID 4608 Rev 9 1/9

www.st.com

9

Characteristics STPS160

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(AV)

I

P

T

Repetitive peak reverse voltage 60 V

RRM

Average forward current TL = 130 °C δ = 0.5 1 A

Surge non repetitive forward current tp =10 ms sinusoidal 75 A

FSM

Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A

RRM

Non repetitive peak reverse current tp = 100 µs square 1 A

RSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400 W

ARM

Storage temperature range - 65 to + 150 °C

stg

T

Maximum operating junction temperature

j

(1)

150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

SMA 30

R

th(j-l)

Junction to lead

SMB 23

°C/W

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

= 25 °C

j

= 125 °C 1.1 4 mA

T

j

= 25 °C

T

j

T

= 125 °C 0.49 0.57

j

= 25 °C

T

j

T

= 125 °C 0.58 0.65

j

V

R

I

= 1 A

F

= 2 A

I

F

= V

RRM

4µA

0.67

0.8

V

To evaluate the conduction losses use the following equation:

P = 0.49 x I

2/9 Doc ID 4608 Rev 9

F(AV)

+ 0.08 I

F2(RMS)

STPS160 Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

R=R

1.0

0.8

0.6

0.4

0.2

0.0 0 25 50 75 100 125 150

δ

T

=tp/T

SMA R =100°C/W

th(j-a)

2

S =1.5cm

(CU)

SMB R =80°C/W S =1.5cm

T (°C)

tp

amb

th(j-a) th(j-I)

th(j-a)

2

(CU)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values) (SMA)

I (A)

M

8

7

6

5

4

3

2

IM

1

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

a

T =50°C

a

T =100°C

a

Doc ID 4608 Rev 9 3/9

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values) (SMB)

I (A)

M

8

7

6

5

4

3

2

IM

1

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

a

T =50°C

a

T =100°C

a