ST STPS15L45C-Y User Manual
Automotive low drop power Schottky rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop
■ Avalanche capability specified
■ AEC-Q101 qualified
Description
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to
DC converters.
Package in DPAK, this device is intended for use
in low voltage, high frequency inverters, freewheeling and polarity protection for automotive
application.
STPS15L45C-Y
DPAK
STPS15L45CBY-TR
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j (max)
V
F (max)
2 x 7.5 A
45 V
150 °C
0.46 V
March 2011 Doc ID 018565 Rev 1 1/7
www.st.com
7
Characteristics STPS15L45C-Y
1 Characteristics
Table 2. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
T
Repetitive peak reverse voltage 45 V
RRM
Forward rms voltage 10 A
Average forward current
= 140 °C
c
δ = 0.5
Per diode
Per device
T
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 3700 W
ARM
Storage temperature range - 65 to + 175 °C
stg
T
Maximum operating junction temperature range
j
(1)
- 40 to +150 °C
7.5
15
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
To t al
Coupling 0.7
4
2.4
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
j
= 125 °C 23 45 mA
T
j
= 25 °C IF = 7.5 A 0.52
T
j
Tj = 125 °C
T
= 25 °C IF = 12 A 0.60
j
= 125 °C IF = 12 A 0.49 0.57
T
j
T
= 25 °C IF = 15 A 0.64
j
= 125 °C IF = 15 A 0.53 0.63
T
j
V
I
F
To evaluate the conduction losses use the following equation:
P = 0.29 x I
2/7 Doc ID 018565 Rev 1
F(AV)
+ 0.023 I
F2(RMS)
= V
R
RRM
= 7.5 A
1mA
0.40 0.46
V
STPS15L45C-Y Characteristics
0
Figure 1. Conduction losses versus
average current
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1µs)
ARM
1
0.1
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
0.8
0.01
t (µs)
.001
0.10.01 1
10 100
p
1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values)
0.6
0.4
0.2
0
25 50 75 100 125
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
T (°C)
j
150
Doc ID 018565 Rev 1 3/7
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