ST STPS15L30CDJF User Manual

Features

STPS15L30CDJF

Low drop power Schottky rectifier

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop

■ Low thermal resistance

■ High avalanche capability specified

Description

Dual center tap Schottky rectifier suited for switch
mode power supply and high frequency DC to DC
converters.

Packaged in PowerFLAT™, this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.

A1

A2

K

A2

A1

PowerFLAT 5x6

STPS15L30CDJF

Table 1. Device summary

K

K

A1

A2

Symbol Value

TM: PowerFLAT is a trademark of STMicroelectronics

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.34 V

V

F

2 x 7.5 A

30 V

May 2011 Doc ID 15664 Rev 4 1/7

www.st.com

7

Characteristics STPS15L30CDJF

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 30 V

RRM

Forward rms current 10 A

Average forward current δ = 0.5 Tc = 140 °C

Surge non repetitive forward current tp = 10 ms sinusoidal 75 A

FSM

Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A

RRM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2800 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

(1)

Per diode 7.5

Per device 15

A

150 °C

R

R

Junction to case

th(j-c)

Coupling 0.7

th(c)

°C/WTotal 1.6

When diodes 1 and 2 are used simultaneously:

Per diode 2.5

Δ T

(diode 1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(1)

V

Forward voltage drop

F

1. Pulse test: tp = 380 µs, δ < 2%

= 25 °C

T

j

T

= 125 °C - 70 140 mA

j

= 25 °C IF = 7.5 A - - 0.48

T

j

T

= 125 °C IF = 7.5 A - 0.34 0.39

j

T

= 25 °C IF = 15 A - - 0.57

j

= 125 °C IF = 15 A - 0.44 0.51

T

j

= V

V

R

RRM

--1mA

To evaluate the conduction losses use the following equation:
P = 0.27 x I

F(AV)

+ 0.016 I

F2(RMS)

V

2/7 Doc ID 15664 Rev 4

STPS15L30CDJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current
(per diode)

P

(W)

F(AV)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

012345678910

δ=0.05

δ=0.1

δ=0.2

I

F(AV)

(A)

δ=0.5

δ

=tp/T

δ=1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature
(δ = 0.5, per diode)

I

(A)

F(AV)

9

8

7

6

5

4

3

2

1

0

T

T

(°C)

tp

=tp/T

δ

0 25 50 75 100 125 150

amb

Figure 4. Normalized avalanche power

derating versus junction
temperature

P

ARM (Tj)

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

IM(A)

120

110

100

90

80

70

60

50

40

30

I

M

20

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Figure 6. Relative variation of thermal

impedance, junction to case,
versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

Tc=25°C

Tc=75°C

Tc=125°C

Doc ID 15664 Rev 4 3/7

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

tp(s)