ST STPS15L25D, STPS15L25G User Manual
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS15L25D/G
I
F(AV)
V
RRM
15 A
25 V
Tj (max) 150 °C
(max) 0.35V
V
F
FEATURES
VERY LOW FORWARD VOLTAGE DROP
n
FOR LESS POWER DISSIPATION AND REDUCED HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
n
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
n
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single Schottky rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters (V
Packaged in TO-220AC or D
RMS
).
2
PAK, this device is
especially intended for use as a Rectifier at the
secondary of 3.3V SMPS and DC/DC units.
ABSOLUTE RATINGS (limiting values)
TO-220AC
STPS15L25D
K
A
A
K
NC
D2PAK
STPS15L25G
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
dTj Rth j a
July 2003 - Ed : 5B
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 145°C δ = 0.5
Surge non repetitive forward current tp = 10ms Sinusoidal
Repetitive peak reverse current tp = 2µs square F=1kHz
Non repetitive peak reverse current tp = 100µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
thermal runaway condition for a diode on its own heatsink
−1()
25 V
30 A
15 A
250 A
1A
4A
9000 W
-65to+150 °C
150 °C
10000 V/µs
1/5
STPS15L25D/G
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
1 °C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameters Test conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test: * tp = 380µs, δ <2%
Reverse leakage current Tj = 25°C V
Forward voltage drop Tj = 25°C I
*
Tj = 125°C
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
V
R
RRM
F
F
F
F
=
= 15A
= 15A
= 30A
= 30A
1.3 mA
225 450 mA
0.46 V
0.3 0.35
0.56
0.41 0.46
To evaluate the maximum conduction losses use the following equation :
P=0.24xI
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
F(AV)
δ = 0.05
+ 0.0073 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
=tp/T
δ
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
IF(av)(A)
16
14
12
10
δ = 1
T
tp
8
6
δ
=tp/T
T
tp
4
2
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
2/5
p
10 100 1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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