ST STPS15H100C-Y User Manual
Automotive high voltage power Schottky rectifier
Features
■ Negligible switching losses
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Low thermal resistance
■ Avalanche capability specified
■ AEC-Q101 qualified
STPS15H100C-Y
Description
Dual center tab Schottky rectifier suited for
switched mode power supply and high frequency
DC to DC converters.
Packaged in DPAK, this device is intended for use
in high frequency inverters in automotive market.
STPS15H100CBY-TR
DPAK
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j (max)
V
F(max)
2 x 7.5 A
100 V
175 °C
0.67 V
November 2011 Doc ID 17686 Rev 1 1/7
www.st.com
7
Characteristics STPS15H100C-Y
1 Characteristics
Table 2. Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
P
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 10 A
= 135 °C Per diode 7.5
T
Average forward current
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
FSM
Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A
RRM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6600 W
ARM
Storage temperature range - 65 to + 175 °C
stg
Operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
(1)
c
δ = 0.5 Per device 15
range
-40 to +175 °C
A
Symbol Parameter Value Unit
Per diode 4
R
R
Junction to case
th(j-c)
Coupling 0.7
th(c)
°C/WTotal 2.4
When the diodes 1 and 2 are used simultaneously :
Δ T
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage
(1)
I
R
current
(1)
(
) Forward voltage drop
V
F
1. Pulse test: tp = 380 µs, δ < 2%
(Per diode) + P(diode 2) x R
th(j-c)
= 25 °C
T
j
T
= 125 °C 1.3 4 mA
j
T
= 25 °C IF = 7.5 A 0.8
j
= 125 °C IF = 7.5 A 0.62 0.67
T
j
T
= 25 °C IF = 12 A 0.85
j
= 125 °C IF = 12 A 0.68 0.73
T
j
= 25 °C IF = 15 A 0.89
T
j
T
= 125 °C IF = 15 A 0.71 0.76
j
= V
V
R
RRM
th(c)
3µA
V
To evaluate the conduction losses use the following equation:
P = 0.58 x I
2/7 Doc ID 17686 Rev 1
F(AV)
+ 0.012 I
F2(RMS)
STPS15H100C-Y Characteristics
Figure 1. Conduction losses versus average
current
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1µs)
ARM
1
0.1
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
0.8
0.01
t (µs)
0.001
0.10.01 1
10 100
p
1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values)
0.6
0.4
0.2
0
25 50 75 100 125
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
T (°C)
j
150
Doc ID 17686 Rev 1 3/7
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