ST STPS15H100C User Manual

STPS15H100C

High voltage power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

(max) 175° C

T

j

(max) 0.67 V

V

F

2 x 7.5 A

100 V

K

A1

K

A2

K

Features and Benefits

■ Negligible switching losses

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ Avalanche capability specified

STPS15H100CB

DPAK

A2

A1

STPS15H100CH

IPAK

Description

Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters.

Packaged in DPAK and IPAK, this device is intended for use in high frequency inverters.

Table 1. Absolute Ratings (limiting values, per diode)

Symbol Parameter Value Unit

A1

A2

K

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

P

ARM

T

stg

T

Repetitive peak reverse voltage 100 V

RMS forward current 10 A

T

= 135° C Per diode 7.5

Average forward current

c

δ = 0.5 Per device 15

Surge non repetitive forward current tp = 10 ms sinusoidal 75 A

Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 6600 W

Storage temperature range -65 to + 175 °C

Maximum operating junction temperature

j

(1)

175 °C

A

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

1

------------------ --------

<

Rth j a–()

June 2006 Rev 4 1/8

www.st.com

8

Characteristics STPS15H100C

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value Unit

R

Junction to case

th(j-c)

Coupling 0.7

th(c)

°C/WTo ta l 2 .4

When the diodes 1 and 2 are used simultaneously :

Per diode 4

∆ T

(diode 1) = P(diode1) x R

j

Table 3. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

= 25° C

(1)

I

Reverse leakage current

R

j

T

= 125° C 1.3 4 mA

j

= V

V

R

RRM

3µA

Tj = 25° C IF = 7.5 A 0.8

Tj = 125° C IF = 7.5 A 0.62 0.67

T

= 25° C IF = 12 A 0.85

V

(1.) Forward voltage drop

F

j

T

= 125° C IF = 12 A 0.68 0.73

j

Tj = 25° C IF = 15 A 0.89

T

= 125° C IF = 15 A 0.71 0.76

j

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.58 x I

F(AV)

+ 0.012 I

F2(RMS)

V

2/8

STPS15H100C Characteristics

9

0

Figure 1. Conduction losses versus average

current

PF(av)(W)

7

6

5

4

3

2

1

0

012345678

δ = 0.05

δ = 0.2

δ = 0.1

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

IM(A)

100

90

80

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

IF(av)(A)

9

8

7

6

5

4

3

2

1

0

T

tp

=tp/T

δ

0 25 50 75 100 125 150 175

Rth(j-a)=Rth(j-c)

Rth(j-a)=70°C/W

Tamb(°C)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

j

0 25 50 75 100 125 150

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

=tp/T

T

tp

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