ST STPS15H100C User Manual

STPS15H100C

High voltage power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

(max) 175° C

T

j

(max) 0.67 V

V

F

2 x 7.5 A

100 V

K

A1

K

A2

K

Features and Benefits

■ Negligible switching losses

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ Avalanche capability specified

STPS15H100CB

DPAK

A2

A1

STPS15H100CH

IPAK

Description

Dual center tab Schottky rectifier suited for
switched mode power supply and high frequency
DC to DC converters.

Packaged in DPAK and IPAK, this device is
intended for use in high frequency inverters.

Table 1. Absolute Ratings (limiting values, per diode)

Symbol Parameter Value Unit

A1

A2

K

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

P

ARM

T

stg

T

Repetitive peak reverse voltage 100 V

RMS forward current 10 A

T

= 135° C Per diode 7.5

Average forward current

c

δ = 0.5 Per device 15

Surge non repetitive forward current tp = 10 ms sinusoidal 75 A

Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 6600 W

Storage temperature range -65 to + 175 °C

Maximum operating junction temperature

j

(1)

175 °C

A

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

1

------------------ --------

<

Rth j a–()

June 2006 Rev 4 1/8

www.st.com

8

Characteristics STPS15H100C

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value Unit

R

R

Junction to case

th(j-c)

Coupling 0.7

th(c)

°C/WTo ta l 2 .4

When the diodes 1 and 2 are used simultaneously :

Per diode 4

∆ T

(diode 1) = P(diode1) x R

j

Table 3. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

= 25° C

(1)

I

Reverse leakage current

R

j

T

= 125° C 1.3 4 mA

j

= V

V

R

RRM

3µA

Tj = 25° C IF = 7.5 A 0.8

Tj = 125° C IF = 7.5 A 0.62 0.67

T

= 25° C IF = 12 A 0.85

V

(1.) Forward voltage drop

F

j

T

= 125° C IF = 12 A 0.68 0.73

j

Tj = 25° C IF = 15 A 0.89

T

= 125° C IF = 15 A 0.71 0.76

j

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:
P = 0.58 x I

F(AV)

+ 0.012 I

F2(RMS)

V

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STPS15H100C Characteristics

9

0

Figure 1. Conduction losses versus average

current

PF(av)(W)

7

6

5

4

3

2

1

0

012345678

δ = 0.05

δ = 0.2

δ = 0.1

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values)

IM(A)

100

90

80

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

IF(av)(A)

9

8

7

6

5

4

3

2

1

0

T

tp

=tp/T

δ

0 25 50 75 100 125 150 175

Rth(j-a)=Rth(j-c)

Rth(j-a)=70°C/W

Tamb(°C)

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

j

0 25 50 75 100 125 150

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

=tp/T

T

tp

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Characteristics STPS15H100C

0

6

Figure 7. Reverse leakage current versus

reverse voltage applied (typical
values)

IR(mA)

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

0 102030405060 70809010

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Figure 9. Forward voltage drop versus

forward current

IFM(A)

100

Tj=125°C

Tj=125°C

(Maximum values)

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

10

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.

(Typical values)

VFM(V)

Tj=25°C

(Maximum values)

Figure 8. Junction capacitance versus

reverse voltage applied (typical
values)

C(nF)

1.0

0.1

F=1MHz

Vosc=30mV

Tj=25°C

VR(V)

0.0

1 10 100

Figure 10. Thermal resistance junction to

ambient versus copper surface
under tab (epoxy printed board
FR4, Cu: 35µm)

Rth(j-a)(°C/W)

100

90

80

70

60

50

40

30

20

10

0

02468101214161820

S(cm²)

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STPS15H100C Package Information

2 Package Information

Epoxy meets UL94,V0

Table 4. DPAK Package mechanical data

Dimensions

Ref

A 2.20 2.40 0.086 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

L2 0.80 typ. 0.031 typ.

L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

Figure 11. DPAK Footprint (dimensions in mm)

Millimeters Inches

Min. Max. Min. Max.

6.7

6.7

3

3

1.61.6

2.32.3

5/8

Package Information STPS15H100C

Table 5. IPAK Package mechanical data

Dimensions

Ref.

A 2.20 2.40 0.086 0.094

A1 0.90 1.10 0.035 0.043

A3 0.70 1.30 0.027 0.051

A

E

B2

L2

C2

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.212

B3 0.95 0.037

B5 0.30 0.035

C 0.45 0.60 0.017 0.023

D

C2 0.48 0.60 0.019 0.023

H

L1

L

B3

B

V1

A1

D 6 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

e 2.28 0.090

B5

e

G

C

A3

G 4.40 4.60 0.173 0.181

H 16.10 0.634

L 9 9.40 0.354 0.370

L1 0.8 1.20 0.031 0.047

L2 0.80 1 0.031 0.039

V1 10° 10°

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

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STPS15H100C Ordering Information

3 Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

STPS15H100CB S15H100 DPAK 0.30 g 75 Tube

STPS15H100CB-TR S15H100 DPAK 0.30 g 2500 Tape andreel

STPS15H100CH S15H100CH IPAK 0.35 g 75 Tube

4 Revision History

Date Revision Changes

Mar-2004 3 Last issue

08-Jun-2006 4 Reformatted to current standard. Added IPAK.

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STPS15H100C

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