ST STPS1545C User Manual
STPS1545C
Power Schottky rectifier
Features
■ very small conduction losses
■ negligible switching losses
■ extremely fast switching
■ avalanche capability specified
Description
Dual center tap Schottky rectifier suited for switch
mode power supply and high frequency DC to DC
converters.
Packaged either in TO-220AB, D
DPAK, this device is especially intended for use in
low voltage, high frequency inverters, free
wheeling and polarity protection applications.
2
PAK, I2PAK, or
A1
A2
A1
TO-220AB
STPS1545CT
K
A2
A1
2
D
PAK
STPS1545CG
K
A2
A2
K
A1
DPAK
STPS1545CB
A2
K
A1
I2PAK
STPS1545CR
Table 1. Device summary
I
F(AV)
V
RRM
T
(max) 175 °C
j
(max) 0.57 V
V
F
2 x 7.5 A
45 V
November 2010 Doc ID 3503 Rev 7 1/10
www.st.com
10
Characteristics STPS1545C
d
-
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 45 V
RRM
Forward rms current 20 A
Average forward current δ = 0.5 Tc = 157 °C Per diode 7.5 A
Surge non repetitive forward current tp = 10 ms sinusoidal 150 A
FSM
t
= 2 µs square
Peak repetitive reverse current
RRM
Non repetitive peak reverse current tp = 100 µs square 2 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2700 W
ARM
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
p
F = 1 kHz
(1)
1A
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
To t al
Coupling 0.35
3.0
1.7
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics (per diode)
(Per diode) + P(diode2) x R
th(j-c)
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
j
= 125 °C - 5 15 mA
T
j
T
= 125°C IF = 7.5A - 0.5 0.57
j
= 25°C IF = 15 A --0.84
j
= 125 °C IF = 15 A - 0.65 0.72
T
j
To evaluate the conduction losses use the following equation:
P = 0.42 x I
2/10 Doc ID 3503 Rev 7
F(AV)
+ 0.020 I
F2(RMS)
th(c)
- - 100 µA
=V
V
R
RRM
V T
STPS1545C Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per
diode)
P (W)
F(AV)
6
5
4
3
2
1
0
012345678910
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ = 1
δ
=tp/T
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5, per
diode)
I (A)
F(AV)
9
R=R
R =15°C/W
th(j-a)
th(j-a) th(j-c)
8
7
R =40°C/W
δ
=tp/T
th(j-a)
T
tp
T (°C)
amb
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
120
100
80
T =50°C
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
C
T =100°C
C
T =150°C
C
Doc ID 3503 Rev 7 3/10
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ
T
=tp/T
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
t (s)
p
tp
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