ST STPS140 User Manual

®

Table 1: Main Product Characteristics

I

F(AV)

V

RRM

T

(max) 150°C

j

(max) 0.5 V

V

F

1 A

40 V

STPS140

POWER SCHOTTKY RECTIFIER

FEATURES AND BENEFITS

■ Very small conduction losses

■ Negligible switching losses

■ Low forward voltage drop

■ Surface mount miniature packages

■ Avalanche capability specified

(JEDEC DO-214AC)

SMA

STPS140A

SMB

(JEDEC DO-214AA)

STPS140U

DESCRIPTION

Single chip Schottky rectifiers suited to Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in SMA and SMB, this device is

Table 2: Order Codes

Part Number Marking

STPS140A S140
STPS140U G14

especially intended for surface mounting and used
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

T

Repetitive peak reverse voltage 40 V

RMS forward voltage 7 A

Average forward current

SMA T

SMB T

= 130°C δ = 0.5

L

= 135°C δ = 0.5

L

Surge non repetitive forward current tp = 10ms sinusoidal 60 A

Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A

Non repetitive peak reverse current tp = 100µs square 1 A

Repetitive peak avalanche power tp = 1µs Tj = 25°C 900 W

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature * 150 °C

j

1A

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

* : thermal runaway condition for a diode on its own heatsink

------------- --

dTj

1

--------------- ----------->

Rth j a

–()

August 2004

REV. 8

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STPS140

Table 4: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-l)

Junction to lead

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit

= 25°C

T

I

*

R

V

F

Reverse leakage current

**

Forward voltage drop

j

= 100°C

T

j

T

= 25°C

j

= 125°C

T

j

T

= 25°C

j

T

= 125°C

j

Pulse test: * tp = 5 ms, δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.4 x I

V

R

I

F

I

F

= V

= 1A

= 2A

F(AV)

SMA 30
SMB 25

RRM

0.25 2

0.43 0.45

0.53 0.6

+ 0.10 I

F2(RMS)

°C/W

12

0.55

0.65

µA

mA

V

Figure 1: Average forward power dissipation
versus average forward current

P (W)

F(AV)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus
ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

1.0

SMA
R =100°C/W

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

δ

=tp/T

T

tp

th(j-a)

S =1.5cm

(CU)

T (°C)

amb

2

SMB
R =80°C/W

th(j-a)

S =1.5cm

(CU)

R=R

th(j-a) th(j-I)

2

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

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STPS140

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)

I (A)

M

8

7

6

5

4

3

2

IM

1

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

a

T =50°C

a

T =100°C

a

Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0
1E-2 1E-1 1E+0 1E+1 1E+2

t (s)

p

δ

=tp/T

T

tp

Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)

I (A)

M

8

7

6

T =25°C

5

4

3

2

I

M

1

0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

a

T =50°C

a

T =100°C

a

Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMB)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ

= 0.5

0.5

0.4

0.3

δ

= 0.2

0.2

δ

= 0.1

0.1

Single pulse

0.0
1E-2 1E-1

1E+0

t (s)

p

1E+1 1E+2

δ

=tp/T

T

tp

1E+3

Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)

I (µA)

R

1E+3

1E+2

1E+1

1E+0

1E-1

1E-2

0 5 10 15 20 25 30 35 40

T =125°C

j

T =75°C

j

T =25°C

j

V (V)

R

Figure 10: Junction capacitance versus
reverse voltage applied (typical values)

C(pF)

200

100

50

20

V (V)

10

12 51020 50

R

F=1MHz
T =25°C

j

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