ST STPS120L15TV User Manual
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
STPS120L15TV
I
F(AV)
V
RRM
2x60A
15 V
K2 A2
Tj (max) 125 °C
V
(max) 0.31V
F
A1K1
FEATURES AND BENEFITS
VERY LOW DROP FORWARD VOLTAGE FOR
n
K2
LESS POWER DISSIPATION AND REDUCED
HEATSINK
INSULATED PACKAGE:
n
Insulated voltage = 2500 V
(RMS)
Capacitance = 45 pF
AVALANCHE CAPABILITY SPECIFIED
n
K1
A1
A2
DESCRIPTION
Dual Schottky rectifier suited for Switched Mode
Power Supplies and DC to DC power converters.
Packaged in ISOTOP
TM
, this device is especially
ISOTOP
TM
intended for use as an OR-ing diode in fault
tolerant power supply equipments.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 15 V
RMS forward current 160 A
Average forward current Tc = 115°C
60 A
δ =1
I
FSM
Surge non repetitive forward current tp = 10 ms
1200 A
Sinusoidal
I
RRM
Repetitive peak reverse current tp = 2µs
2A
F = 1kHz
P
ARM
T
Repetitive peak avalanche power tp = 1µs Tj = 25°C 72030 W
Storage temperature range - 65 to + 150 °C
stg
Tj Maximum operating junction temperature 125 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
ISOTOP isatrademark of STMicroelectronics
July 2003 - Ed :54A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS120L15TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.18xI
Junction to case Per diode 0.45 °C/W
Total 0.28
Coupling 0.1
* Reverse leakage current Tj = 100°CV
Tj=25°CV
= 5V 450 mA
R
= 12V 22 mA
R
Tj = 100°C 0.7 2.2 A
* Forward voltage drop Tj = 25°CI
F
Tj = 125°CI
+ 2.2 10-3xI
F(AV)
F2(RMS)
= 60 A 0.43 V
F
= 60 A 0.27 0.31
F
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
20
18
16
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
14
12
10
8
6
T
4
2
0
0 10203040506070
IF(av)(A)
δ
=tp/T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature ( δ =1) (per diode).
IF(av)(A)
70
60
Rth(j-a)=Rth(j-c)
50
40
Rth(j-a)=2.5°C/W
30
δ
=tp/T
T
tp
Tamb(°C)
20
10
0
0 25 50 75 100 125
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
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