ST STPS12045TV User Manual
®
MAIN PRODUCT CHARACTERISTI CS
STPS12045TV
POWER SCHO TTKY REC TIFIER
I
F(AV)
V
RRM
2 x 60 A
45 V
Tj (max) 150 °C
(max) 0.67 V
V
F
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
EXTREMELY FAST SWITCHING
LOW THERMAL RE SISTA NCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
(RMS )
Capacitance = 45 pF
DESCRIPTION
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limiting values) per diode
A2K2
A1K1
ISOTOP
TM
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
dPtot
* :
dTj
ISOTOP is a registered trademark of STMicroelectronics
June 1999 - Ed: 3A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 95°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp = 2 µs square F = 1kHz
Non repetitive peak reverse current tp = 100µs square
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
δ
= 0.5
Per diode
Per device
45 V
125 A
60
120
900 A
2A
5A
- 55 to + 150
150 °C
10000 V/µs
°
A
C
1/4
STPS12045TV
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode
When the diodes 1 and 2 are used simultaneou sly :
∆ Tj(diode 1) = P(diode) x R
(Per diode) + P(diode 2) x R
th
th(c)
Total
Coupling
1
0.55
0.1
°
C/W
STATIC ELECTRICAL CHARACTE RISTICS
(per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
*
R
Reverse leakage current Tj = 25°CV
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 125°CI
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the fo llowing eq uation :
P = 0.47 x I
Fig. 1:
+ 0.00333 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
60
55
50
45
40
35
30
25
20
15
10
5
0
0 1020304050607080
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
= V
R
RRM
43 150
= 120 A
F
= 120 A
F
= 60 A
F
Fig. 2:
Average current versus case temperature
0.72 0.87
0.52 0.67
(δ= 0.5) (per diode).
IF(av)(A)
70
60
50
40
30
20
10
=tp/T
δ
0
0 25 50 75 100 125 150
T
Rth(j-a)=Rth(j-c)
tp
Rth(j-a)=5°C/W
Tamb(°C)
1mA
0.91 V
2/4
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