ST STPS10L60C User Manual
STPS10L60C
Power Schottky rectifier
Features
■ Low forward voltage drop
■ Negligible switching losses
■ Insulated package:
– Insulating voltage = 2000 V DC
– Capacitance = 12 pF
■ Avalanche capability specified
Description
Dual center tap Schottky rectifier suited for switch
mode power supplies and high frequency DC to
DC converters.
Packaged in TO-220FPAB, this device is intended
for use in high frequency inverters.
A1
A2
A1
TO-220FPAB
STPS10L60CFP
Table 1. Device summary
I
2 x 5 A
F(AV)
V
RRM
150 °C
T
j (max)
V
F (max)
K
A2
K
60 V
0.52 V
May 2011 Doc ID 6426 Rev 5 1/7
www.st.com
7
Characteristics STPS10L60C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
Repetitive peak reverse voltage 60 V
Forward rms current 30 A
Average forward current
Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A
TC = 130 °C
δ = 0.5
Per diode
Per device
5
10
Repetitive peak reverse current tp = 2 µs square F=1 kHz 1 A
Repetitive peak avalanche power
Storage temperature range
stg
T
Maximum operating junction temperature
j
tp = 1 µs T
(1)
= 25 °C
j
4000 W
-65 to +
175
150 °C
A
°C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
dPtot
---------------
1. thermal runaway condition for a diode on its own heatsink
dTj
Table 3. Thermal resistance
1
--------------------------
<
Rth j a–()
Symbol Parameter Value Unit
R
Junction to case
th (j-c)
R
th (c)
Coupling 2.5 ° C/W
Per diode
To t al
4.5
3.5
° C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
Table 4. Static electrical characteristics (per diode)
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
IR
V
1. Pulse test : tp = 380 µs, δ < 2%
Reverse leakage current
(1)
Forward voltage drop
F
j
T
= 125 °C
j
T
= 25 °C
j
T
= 125 °C
j
= 25 °C
T
j
T
= 125 °C
j
To evaluate the conduction losses use the following equation:
P = 0.44 x I
2/7 Doc ID 6426 Rev 5
+ 0.0091x I
F(AV)
F2(RMS)
220
= V
V
R
I
= 5 A 0.55
F
RRM
45 60
IF = 5 A 0.43 0.52
IF = 10 A 0.67
I
= 10 A 0.55 0.64
F
µA
mA
V
STPS10L60C Characteristics
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
δ = 1
=tp/T
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5)
(per diode)
I (A)
F(AV)
6
R=R
5
4
3
2
1
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
th(j-a) th(j-c)
T (°C)
amb
R =15°C/W
th(j-a)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
90
80
70
60
50
40
30
20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
Doc ID 6426 Rev 5 3/7
Figure 6. Relative variation of thermal
transient impedance junction to
case versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
δ
=tp/T
T
tp
δ = 0.1
0.2
t (s)
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
p
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