ST STPS10L45C User Manual
STPS10L45C
Low drop power Schottky rectifier
Main product characteristics
I
F(AV)
V
RRM
T
(max) 150° C
j
(max) 0.46 V
V
F
2 x 5 A
45 V
Features and benefits
■ Low forward voltage drop meaning very small
conduction losses
■ Low dynamic losses as a result of the Schottky
barrier
■ Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC
Capacitance = 12 pF
■ Avalanche capability specified
Description
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, TO-220FPAB, I
2
D
PAK, these devices are intended for use in low
voltage, high frequency inverters, free-wheeling
and polarity protection applications.
2
PAK and
STPS10L45CG
STPS10L45CT
K
A1
D2PAK
TO-220AB
A1
A1
A2
A2
K
A2
K
A1
I2PAK
STPS10L45CR
A2
K
TO-220FPAB
STPS10L45CFP
A1
A2
K
March 2007 Rev 4 1/10
www.st.com
10
Characteristics STPS10L45C
d
-
1 Characteristics
Table 1. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
R
th (c)
R
th(j-c)
R
th (c
Repetitive peak reverse voltage 45 V
RMS forward voltage 20 A
Average forward
current
TO-220AB /
2
PAK / I2PA K
D
TO-220FPAB
Tc =135° C
δ = 0.5
= 140° C
T
c
δ = 0.5
Per diode
Per device
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 150 A
Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 2 A
Repetitive peak avalanche power tp = 1 µs Tj = 25°C 2700 W
Storage temperature range -65 to + 150 ° C
stg
Maximum operating junction temperature
j
1
--------------------------
<
Rth j a–()
Junction to case
TO-220AB / D
2
PA K
I
(1)
2
PAK /
Per diode
To tal
Coupling 0.35
Per diode
Junction to case TO-220FPAB
)
To tal
Coupling 2.5
5
10
5
10
A
A
150 ° C
3
1.7
°C/W
5
3.8
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
Table 3. Static electrical characteristics (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
(Per diode) + P(diode 2) x R
th(j-c)
Tj = 25° C
T
= 100° C 45 90 mA
j
Tj = 25° C IF = 5 A 0.53
= 125° C IF = 5 A 0.36 0.46
T
j
= 25° C IF = 10 A 0.67
T
j
= 125° C IF = 10 A 0.49 0.59
T
j
To evaluate the conduction losses use the following equation:
P = 0.33 x I
2/10
F(AV)
+ 0.026 I
F2(RMS)
VR = V
th(c)
0.15 mA
RRM
V
STPS10L45C Characteristics
Figure 1. Average forward power
dissipation versus average
forward current (per diode)
P (W)
F(AV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB, I
2
PAK and D2PAK)
Figure 2. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
I (A)
F(AV)
6
5
4
3
2
1
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
T (°C)
amb
TO-220FPAB
22
TO-220AB / D PAK / I
R =15°C/W
th(j-a)
PAK
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
( TO-220FPAB)
I (A)
M
100
90
80
70
60
50
40
30
IM
20
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =125°C
T =25°C
C
T =75°C
C
C
I (A)
M
80
70
60
50
40
30
20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
3/10
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