ST STPS10L40C User Manual

STPS10L40C

Low drop power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

(max) 0.46 V

V

F

2 x 5 A

40 V

Features and Benefits

■ Low forward voltage drop meaning very small

conduction losses

■ Low dynamic losses as a result of the schottky

barrier

■ Insulated package: TO-220FPAB

insulating voltage = 2000 V DC capacitance = 12 pF

■ Avalanche capability specified

Description

Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters.

A1

A2

A1

TO-220AB

STPS10L40CT

STPS10L40CFP

A2

K

TO-220FPAB

K

A2

A1

D2PA K

STPS10L40CG

A2

K

A1

Packaged in TO-220AB, TO-220FPAB and

2

D

PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.

March 2007 Rev 6 1/9

www.st.com

9

Characteristics STPS10L40C

d

-

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 2. Thermal resistances

Symbol Parameter Value Unit

R

th(j-c)

R

th (c)

R

th(j-c)

R

th (c

Repetitive peak reverse voltage 40 V

RMS forward voltage 20 A

Average forward

current

TO-220AB

2

PA K

D

TO-220FPAB

Tc =135° C δ = 0.5

Tc = 140° C δ = 0.5

Per diode Per device

Surge non repetitive forward current tp = 10 ms sinusoidal 150 A

Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A

Non repetitive peak reverse current tp = 100 µs square 2 A

Repetitive peak avalanche power tp = 1 µs Tj = 25°C 2700 W

Storage temperature range -65 to + 150 ° C

stg

Maximum operating junction temperature

j

1

--------------------------

<

Rth j a–()

(1)

Per diode

Junction to case TO-220AB / D2PA K

To ta l

Coupling 0.35

Per diode

Junction to case TO-220FPAB

)

To ta l

Coupling 2.5

5

10

5

10

150 ° C

3

1.7

°C/W

5

3.8

°C/W

A

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

(Per diode) + P(diode 2) x R

th(j-c)

Tj = 25° C

T

= 100° C 8 25 mA

j

Tj = 25° C IF = 5 A 0.53

= 100° C IF = 5 A 0.36 0.46

T

j

= 25° C IF = 10 A 0.67

T

j

= 125° C IF = 10 A 0.49 0.59

T

j

To evaluate the conduction losses use the following equation: P = 0.33 x I

2/9

F(AV)

+ 0.026 I

F2(RMS)

VR = V

RRM

th(c)

.

0.2 mA

V

STPS10L40C Characteristics

Figure 1. Average forward power

dissipation versus average forward current (per diode)

P (W)

F(AV)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode) (TO-220AB and D

2

PAK).

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

6

5

4

3

2

1

0

0 25 50 75 100 125 150

δ

=tp/T

T

tp

T (°C)

amb

R=R

th(j-a) th(j-c)

R =15°C/W

th(j-a)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode) (TO-220FPAB)

I (A)

M

100

90

80

70

60

50

40

30

IM

20

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

T =75°C

T =125°C

C

I (A)

M

80

70

60

C

50

40

30

20

IM

10

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

3/9

T =25°C

C

T =75°C

C

T =125°C

C