ST STPS10L25D, STPS10L25G User Manual
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS10L25D/G
I
F(AV)
V
RRM
10 A
25 V
Tj (max) 150 °C
V
(max) 0.35V
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
n
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION / REVERSE
n
LOSSES TRADE-OFF WHICH MEANS THE
HIGHEST EFFICIENCY IN THE APPLICATIONS
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
This device is especially intended for use as a
rectifier at the secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values)
TO-220AC
STPS10L25D
K
A
A
K
NC
D2PAK
STPS10L25G
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Repetitive peak reverse voltage 25 V
RMS forward current 30 A
Average forward current Tc = 140°C δ = 0.5 10 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 200 A
Repetitive peak reverse current tp=2 µs square F=1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 3 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 5500 W
Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed : 4B
thermal runaway condition for a diode on its own heatsink
−1()
1/5
STPS10L25D/G
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-c)
Junction to case 1.5 °C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°CV
R
R=VRRM
800 µA
Tj = 125°C 135 260 mA
V
* Forward voltage drop Tj = 25°CI
F
Tj = 125°CI
Tj=25°CI
Tj = 125°Χ I
= 10 A 0.46 V
F
= 10 A 0.30 0.35
F
= 20 A 0.55
F
= 20 A 0.41 0.48
F
Pulse test: * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.22xI
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
01234567891011
F(AV)
δ = 0.05
+ 0.013 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
δ
=tp/T
T
δ = 1
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
IF(av)(A)
12
10
8
6
4
2
tp
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
2/5
p
10 100 1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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