ST STPS1045HR User Manual
Aerospace 2 x 10 A - 45 V Schottky rectifier
Features
■ Forward current: 2 x 10 A
■ Repetitive peak voltage: 45 V
■ Low forward voltage drop: 0.75 V
■ Maximum junction temperature: 175 °C
■ Negligible switching losses
■ Low capacitance
■ High reverse avalanche surge capability
■ Hermetic package
■ Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■ ESCC qualified
STPS1045HR
SMD.5
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. Housed in a
hermetically sealed surface mount package, it is
ideal for use in applications for aerospace and
other harsh environments.
The STPS1045HR is intended for use in medium
voltage applications and in high frequency circuits
where low switching losses and low noise are
required.
Table 1. Device summary
Order code
STPS1045CS1 -
STPS1045CSHRB 5106/017/02 ESCC flight -
ESCC detailed
specification
Quality level Configuration Package
Engineering
model
Double die
common cathode
SMD.5 Gold
Lead
finish
EPPL
-
June 2010 Doc ID 17640 Rev 1 1/8
www.st.com
8
Characteristics STPS1045HR
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Characteristic Value Unit
(3)
(2)
(1)
(4)
200 A
45 V
1A
10
A
20
-65 to +175 °C
+245 °C
V
I
FSM
I
RRM
RRM
Forward surge current (per diode)
Repetitive peak reverse voltage
Repetitive peak reverse current
Average output rectified current (50% duty cycle):
I
O
per diode
per device
I
F(RMS)
T
OP
T
T
STG
T
SOL
Forward rms current (per diode) 15 A
Operating temperature range
(case temperature)
Junction temperature +175 °C
J
Storage temperature range -65 to +175 °C
Soldering temperature
(5)
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For T
5. Duration 5 seconds maximum and the same package shall not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
> +140 °C, derate linearly to 0 A at +175 °C.
case
Symbol Characteristic Value Unit
Thermal resistance, junction to case
(1)
R
th(j-c)
1. Package mounted on infinite heatsink
2. The per device ratings apply only when both anode terminals are tied togther.
per diode
per device
(2)
1.65
0.85
°C/W
2/8 Doc ID 17640 Rev 1
STPS1045HR Characteristics
Table 4. Electrical measurements at ambiant temperature (per diode), T
Symbol Characteristic
I
R
(1)
V
F1
(1)
V
F2
(1)
V
F3
C Capacitance 4001 V
Z
th(j-c)
1. Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol Characteristic
s
MIL-STD-750
test method
Test conditions
= 22 ±3 °C
amb
Val ues
Min. Max.
Reverse Current 4016 DC method, VR = 45V - 100 µA
Forward Voltage 4011
Pulse method, I
Pulse method, IF = 20 A - 750 mV
= 3 A - 620 mV
F
Pulse method, IF = 20 A 880 mV
= 5 V, F = 1 MHz - 500 pF
R
I
Relative thermal impedance,
(2)
junction to case
limits specified in maximum ratings.
th(j-c)
3101
MIL-STD-750
test method
= 15 to 40 A, tH = 50 ms
H
= 50 mA, tmd = 100 µs
I
M
Test conditions
(1)
Calculate ΔV
Val ues
Min. Max.
(3)
F
Units
°C/W
Units
T
= +125 (+0, -5) °C
I
Reverse Current 4016
R
(2)
V
F1
(2)
V
V
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
Forward Voltage 4011
F2
(2)
F3
case
DC method, V
T
= +125 (+0, -5) °C
case
pulse method, I
T
= +125 (+0, -5) °C
case
pulse method, I
= -55 (+0, -5) °C
T
case
pulse method, I
T
= +125 (+0, -5) °C
case
pulse method, I
= 45 V
R
= 3 A
F
= 10 A
F
= 10 A
F
= 20 A
F
-15mA
-570mV
-700mV
-850mV
-800mV
Doc ID 17640 Rev 1 3/8
Loading...