ST STPS1045B User Manual

Features

STPS1045B

Power Schottky rectifier

■ Negligible switching losses

■ Low forward voltage drop

■ Low capacitance

■ High reverse avalanche surge capability

■ Avalanche specification

Description

High voltage dual Schottky rectifier suited for
switch mode power supplies and other power
converters.

Packaged in DPAK, this device is intended for use
in high frequency circuitries where low switching
losses are required.

K

K

A

A

DPAK

j

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(max) 0.57 V

V

F

10 A

45 V

175 °C

July 2010 Doc ID 6085 Rev 6 1/7

www.st.com

7

Characteristics STPS1045B

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

RRM

P

T

Repetitive peak reverse voltage 45 V

RRM

/

Forward rms current 7 A

pin

Average forward current Tc = 150 °C δ = 0.5 10 A

Surge non repetitive forward current tp = 10 ms sinusoidal 75 A

FSM

Repetitive peak reverse current tp = 2 µs F= 1 kHz 1 A

Repetitive peak avalanche power tp = 1 µs T

ARM

Storage temperature range - 65 to + 150 °C

stg

Maximum operating junction temperature

T

j

(1)

25 °C 4000 W

j =

175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal parameters

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 3 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

= 25 °C

T

j

= 125 °C 7 15 mA

T

j

= 25 °C

T

j

T

= 125 °C 0.50 0.57

j

= 25 °C

T

j

T

= 125 °C 0.65 0.72

j

= V

V

R

IF = 10 A

= 20 A

I

F

RRM

100 μA

0.63

0.84

V

To evaluate the conduction losses use the following equation:
P = 0.42 x I

2/7 Doc ID 6085 Rev 6

F(AV)

+ 0.015 I

F2(RMS)

STPS1045B Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P(W)

F(AV)

8

7

6

5

4

3

2

1

0

0123456789101112

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

Figure 2. Average forward current versus

ambient temperature (

I (A)

F(AV)

12

10

8

6

R =70°C/W

4

2

0

0 25 50 75 100 125 150 175

th(j-a)

R=R

th(j-a) th(j-c)

R =15°C/W

th(j-a)

T (°C)

amb

δ : 0.5)

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM

P (25 °C)

1.2

1

0.8

j

ARM

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values)

I (A)

M

120

100

80

60

40

IM

20

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =50°C

C

T =100°C

C

T =150°C

C

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

δ = 0.1

0.2

0.0

Single pulse

1E-4 1E-3 1E-2 1E-1 1E+0

t (s)

p

δ

T

=tp/T

tp

Doc ID 6085 Rev 6 3/7