ST STPS10170C User Manual

STPS10170C

High voltage power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 0.69 V

V

F

2 x 5 A

170 V

175° C

Features and benefits

■ High junction temperature capability

■ Good trade-off between leakage current and

forward voltage drop

■ Low leakage current

■ Avalanche capability specified

Description

Dual centre tab Schottky rectifier designed for high frequency switch mode power supplies.

A1

A2

K

A1

TO-220AB

STPS10170CT

K

A2

A1

DPAK

STPS10170CB

K

A2

K

A1

2

I

PAK

STPS10170CR

K

A2

A1

D2PAK

STPS10170CG

Order codes

Part Number Marking

STPS10170CT STPS10170CT

STPS10170CG STPS10170CG

STPS10170CG-TR STPS10170CG

STPS10170CR STPS10170CR

STPS10170CB PS10170CB

STPS10170CB-TR PS10170CB

July 2006 Rev 1 1/10

www.st.com

Characteristics STPS10170C

1 Characteristics

Table 1. Absolute ratings (limiting values per diode, T

= 25° C unless otherwise specified)

amb

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

Repetitive peak reverse voltage 170 V

RMS forward current 10 A

Per diode 5

I

F(AV)

I

FSM

P

ARM

T

Average forward current, δ = 0.5 Tc = 155° C

Total package

Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A

Relative peak avalanche power Tj = 25° C

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature

j

(1)

tp = 1µs

10

3100 W

175 °C

dV/dt Critical rate of rise of reverse voltage 10 000 V/µs

dP

1. thermal runaway condition for a diode on its own heatsink

tot

j

1

--------------------------< R

th j a–()

--------------dT

Table 2. Thermal parameters

Symbol Parameter Value Unit

Per diode 4

R

th(j-c)

R

th(c)

Table 3. Static electrical characteristics

Junction to case

°C/WTo ta l 2 .4

Coupling 0.7

A

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

Tj = 25° C

VR = V

= 5 A

I

F

= 10 A

I

F

RRM

= 125° C 10 mA

T

j

= 25° C

T

j

T

= 125° C 0.69 0.75

j

= 25° C

T

j

Tj = 125° C 0.79 0.85

10 µA

0.92

1

To evaluate the conduction losses use the following equation: P = 0.65 x I

2/10

F(AV)

+ 0.02 x I

F2(RMS)

V

STPS10170C Characteristics

Figure 1. Conduction losses versus average

forward current (per diode)

P

(W)

F(AV)

5

4

3

2

1

0

0123456

δ=0.05

δ=0.1

I

(A)

F(AV)

δ=0.2

δ=0.5

δ

=tp/T

δ=1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM

p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I

(A)

F(AV)

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T

tp

=tp/T

δ

0 25 50 75 100 125 150 175

T

(°C)

amb

R

th(j-a)=Rth(j-c)

R

=15°C/W

th(j-a)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM

p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

IM(A)

80

70

60

50

40

30

20

I

M

10

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 6. Relative variation of thermal

impedance, junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AB

DPAK I²PAK

D²PAK

0.1

1.E-03 1.E-02 1.E-01 1.E+00

3/10

tp(s)