ST STPS10120C User Manual

Table 1. Main product characteristics

I

2 x 5 A

F(AV)

V

120 V

RRM

T

j(max)

0.64 V

V

F(typ)

175° C

STPS10120C

Power Schottky rectifier

A1

K

A2

Feature and benefits

■ High junction temperature capability

■ Good trade-off between leakage current and

forward voltage drop

■ Low leakage current

■ Avalanche capability specified

■ Insulated package

K

A1

TO-220AB

STPS10120CT

A2

A1

TO-220FPAB

STPS10120CFP

– TO-220FPAB

Insulating voltage = 2000 V Typical package capacitance 12 pF

Table 2. Order code

Part number Marking

Description

STPS10120CT STPS10120CT

Dual center tap Schottky rectifier suited for high frequency switch mode power supplies.

Table 3. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

stg

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Repetitive peak reverse voltage 120 V

RMS forward current 30 A

TO-220AB

Average forward current, δ = 0.5

TO-220FPAB

Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3000 W

Storage temperature range -65 to + 175 ° C

Maximum operating junction temperature

j

1

--------------------------

<

Rth j a–()

(1)

STPS10120CFP STPS10120CFP

T

= 160° C

c

= 150° C 10

T

c

T

= 150° C

c

T

= 135° C 10

c

Per diode Per device

5

175 ° C

A2

K

A

July 2007 Rev 1 1/8

www.st.com

8

Characteristics STPS10120C

1 Characteristics

Table 4. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB

TO-220FPAB

Per diode To t al

TO-220AB

To t al

TO-220FPAB 3.7

3.8

2.3

6.6

5.2

0.7

° C/W

When the diodes 1 and 2 are used simultaneously : T

(diode 1) = P(diode 1) x R

j

Table 5. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

(per diode) + P(diode 2) x R

th(j-c)

T

= 25° C

j

= 125° C 1 3 mA

T

j

= 25° C

T

j

T

= 125° C 0.64 0.7

j

= 25° C

T

j

T

= 125° C 0.73 0.8

j

V

R

IF = 5 A

= 10 A

I

F

= V

th(c)

6µA

RRM

0.85

0.96

V

To evaluate the maximum conduction losses use the following equation : P = 0.60 x I

2/8

F(AV)

+ 0.02 I

F2(RMS)

STPS10120C Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

6

5

4

3

2

1

=tp/T

δ

0

0 25 50 75 100 125 150 175

R =30° C/W

th(j-a)

T

tp

T (°C)

amb

R=R

th(j-a) th(j-c)

TO-220FPAB

TO-220AB

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode) (TO-220AB)

I (A)

M

90

80

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

T =25°C

c

T =75°C

c

T =125°C

c

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode) (TO-220FPAB)

I (A)

M

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

3/8

T =25°C

c

T =75°C

c

T =125°C

c