ST STPIC6C595 User Manual

STPIC6C595

Power logic 8-bit shift register

Features

■Low RDS(on): 4 Ω typ

■30 mJ avalanche energy

■ Eight 100 mA DMOS outputs
■ 250 mA current limit capability
■ 33 V output clamp voltage
■	Device are cascadable	SO-16	TSSOP16
	Low power consumption
■

Description

This STPIC6C595 is a monolithic, mediumvoltage, low current power 8-bit shift register designed for use in systems that require relatively moderate load power such as LEDs. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other low-current or medium-voltage loads.

The device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage register clock (SRCK) and the register clock (RCK), respectively. The device transfers data out the serial output (SER OUT) port on the rising edge of SRCK. The storage register transfers data to the output buffer when shift register clear (CLR) is high. When CLR is low, the input shift register is cleared. When output enable

(G) is held high, all data in the output buffer is held low and all drain output are off. When G is held low, data from the storage register is transparent to the output buffer.

Table 1. Device summary

When data in the output buffers is low, the DMOS transistor outputs are off. When data is high, the DMOS transistor outputs have sink-current capability. The SER OUT allows for cascading of the data from the shift register to additional devices.

Output are low-side, open-drain DMOS transistors with output ratings of 33 V and 100 mA continuous sink-current capability. Each output provides a 250 mA maximum current limit at

TC = 25 °C. The current limit decreases as the junction temperature increases for additional device protection. The device also provides up to 1.5 kV of ESD protection when tested using the human-body model and 150 V machine model.

The STPIC6C595 is characterized for operation over the operating case temperature range of -40 °C to 125 °C.

Order codes	Package	Packaging
STPIC6C595MTR	SO-16 (Tape and reel)	2500 parts per reel
STPIC6C595TTR	TSSOP16 (Tape and reel)	2500 parts per reel
March 2009	Rev 5	1/22
		www.st.com

Contents	STPIC6C595

Contents

1	Logic symbol and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 4
	2.1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.2	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
	2.3	Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		6
	3.1	DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	3.2	Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
4	Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		8
5	Typical operating circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		9
6	Typical performance and characteristics . . . . . . . . . . . . . . . . . . . . . . .		13
7	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16
8	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		21

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STPIC6C595	Logic symbol and pin configuration

1 Logic symbol and pin configuration

Figure 1. Logic symbol and pin configuration

Figure 2. Input and output equivalent circuits

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Maximum rating	STPIC6C595

2 Maximum rating

Stressing the device above the rating listed in the “absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2.1Absolute maximum ratings

Table 2. Absolute maximum ratings

	Symbol	Parameter	Value	Unit
	VCC	Logic supply voltage (See Note 1)	7	V
	VI	Logic input voltage range	-0.3 to 7	V
	VDS	Power DMOS drain to source voltage (See Note 2)	33	V
	IDS	Continuous source to drain diode anode current	250	mA
	IDS	Pulsed source to drain diode anode current	500	mA
		(See Note 3)
	ID	Pulsed drain current, each output, all output ON	250	mA
		(TC = 25 °C)
	ID	Continuous current, each output, all output ON	100	mA
		(TC = 25 °C)
	ID	Peak drain current single output	250	mA
		(TC = 25 °C) (See Note 3)
	EAS	Single pulse avalanche energy	30	mJ
		(See Figure 11 and Figure 12)
	IAS	Avalanche current (See Note 4 and Figure 17)	200	mA
	Pd	Continuous total dissipation (TC ≤ 25 °C)	1087	mW
	Pd	Continuous total dissipation (TC = 125 °C)	217	mW
	TJ	Operating virtual junction temperature range	-40 to +150	°C
	TC	Operating case temperature range	-40 to +125	°C
	Tstg	Storage temperature range	-65 to +150	°C
	TL	Lead temperature 1.6 mm (1/16 inch) from case for 10	260	°C
		seconds

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STPIC6C595	Maximum rating

2.2Thermal data

Table 3. Thermal data

Symbol	Parameter	Value	Unit
Rth(JA)	Thermal resistance junction-ambient	115	°C/W

2.3Recommended operating conditions

Table 4. Recommended operating conditions

	Symbol	Parameter			Min	Typ	Max	Unit
	VCC	Logic supply voltage			4.5		5.5	V
	VIH	High level input voltage			0.85VCC		VCC	V
	VIL	Low level input voltage			0		0.15VCC	V
		Pulse drain output current
	IDP	(TC = 25 °C, VCC = 5 V, all outputs ON)					250	mA
		(see Note 3, Note 5 and Figure 15)
	tsu	Set-up time, SER IN high before SRCK ↑			1.6	3.0	5.7	ns
		(see Figure 4 and Figure 8)
		Hold time, SER IN high before		↑
	thL		G		2.8	4.0	9.6	ns
		(see Figure 4, Figure 7, Figure 8)
	tW	Pulse duration (see Figure 8)			40			ns
	TC	Operating case temperature			-40		125	°C

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Electrical characteristics	STPIC6C595

3 Electrical characteristics

3.1DC characteristics

Table 5. DC characteristics (VCC = 5 V, TC = 25 °C, unless otherwise specified.)

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
V(BR)DSX	Drain-to-source	ID = 1 mA	33	37		V
	breakdown voltage
VSD	Source-to-drain diode	IF = 100 mA		0.85	1.2	V
	forward voltage
VOH	High level output	IOH = -20 μA, VCC = 4.5 V	4.4	4.49		V
	voltage SER OUT	IOH = -4 mA, VCC = 4.5 V	4	4.2		V
VOL	Low level output	IOH = 20 μA, VCC = 4.5 V		0.005	0.1	V
	voltage SER OUT	IOH = 4 mA, VCC = 4.5 V		0.3	0.5	V
IIH	High level input current	VCC = 5.5 V, VI = VCC			1	μA
IIL	Low level input current	VCC = 5.5 V, VI = 0			-1	μA
ICC	Logic supply current	VCC = 5.5 V, all outputs OFF or		20	200	μA
		ON
	Logic supply current at	fSRCK = 5 MHz, CL = 30 pF
ICC(FRQ)		All outputs OFF		0.2	2	mA
	frequency	(See Figure 6, Figure 18 and
		Figure 19)
IN		VDS(on) = 0.5 VIN = ID
	Nominal current	TC = 85 °C		90		mA
		(See Note 5, Note 6, Note 7)
		VDS = 30 V, VCC = 5.5 V		0.3	5	μA
IDSX	Off-state drain current
		VDS = 30 V, VCC =5.5 V or 0 V		0.6	8	μA
		TC = 125 °C
	Static drain source on	ID = 50 mA, VCC = 4.5 V		4.5	6	Ω
	state resistance
RDS(on)		ID = 50 mA, VCC = 4.5 V		6.5	9	Ω
	(See Note 5, Note 6
		TC = 125 °C
	and Figure 14,
	Figure 16)	ID = 100 mA, VCC = 4.5 V		4.5	6	Ω

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STPIC6C595	Electrical characteristics

3.2Switching characteristics

Table 6. Switching characteristics (VCC = 5 V, TC = 25 °C, unless otherwise specified.)

Symbol	Parameter				Test conditions	Min	Typ	Max	Unit
tPHL	Propagation delay
	time, high to low level						80		ns
	output from	G
tPLH	Propagation delay				CL = 30 pF, ID = 75 mA
	time, low to high level						130		ns
	output from				(See Figure 4, Figure 5,
		G
					Figure 6, Figure 7, Figure 20)
tr	Rise time, drain output						60		ns
tf	Fall time, drain output						50		ns
tpd	propagation delay time						20		ns
t	Reverse recovery				IF = 100 mA, di/dt = 10 A/μs		39		ns
a	current rise time				(See Figure 5, Figure 6, and
trr	Reverse recovery time				Figure 9, Figure 10 )		115		ns

Note: 1 All voltage value are with respect to GND

2Each power DMOS source is internally connected to GND

3Pulse duration ≤ 100 μs and duty cycle ≤ 2 %

4Drain supply voltage = 15 V, starting junction temperature (TJS) = 25 °C. L = 1.5 H and IAS = 200 mA (see Fig. 11 and 12)

5Technique should limit TJ - TC to 10 °C maximum

6These parameters are measured with voltage sensing contacts separate from the currentcarrying contacts.

7Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85 °C.

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