ST STPIC6C595 User Manual

Features

STPIC6C595

Power logic 8-bit shift register

■ Low R

■ 30 mJ avalanche energy

■ Eight 100 mA DMOS outputs

■ 250 mA current limit capability

■ 33 V output clamp voltage

■ Device are cascadable

■ Low power consumption

DS(on)

: 4 Ω typ

Description

This STPIC6C595 is a monolithic, medium­voltage, low current power 8-bit shift register
designed for use in systems that require relatively
moderate load power such as LEDs. The device
contains a built-in voltage clamp on the outputs
for inductive transient protection. Power driver
applications include relays, solenoids, and other
low-current or medium-voltage loads.

The device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Data transfers through both the shift and
storage register clock (SRCK) and the register
clock (RCK
data out the serial output (SER OUT) port on the
rising edge of SRCK. The storage register
transfers data to the output buffer when shift
register clear (CLR) is high. When CLR
input shift register is cleared. When output enable
(G

) is held high, all data in the output buffer is
held low and all drain output are off. When G is
held low, data from the storage register is
transparent to the output buffer.

), respectively. The device transfers

is low, the

SO-16 TSSOP16

When data in the output buffers is low, the DMOS
transistor outputs are off. When data is high, the
DMOS transistor outputs have sink-current
capability. The SER OUT allows for cascading of
the data from the shift register to additional
devices.

Output are low-side, open-drain DMOS
transistors with output ratings of 33 V and 100 mA
continuous sink-current capability. Each output
provides a 250 mA maximum current limit at
T

= 25 °C. The current limit decreases as the

C

junction temperature increases for additional
device protection. The device also provides up to

1.5 kV of ESD protection when tested using the
human-body model and 150 V machine model.

The STPIC6C595 is characterized for operation
over the operating case temperature range of

-40 °C to 125 °C.

Table 1. Device summary

Order codes Package Packaging

STPIC6C595MTR SO-16 (Tape and reel) 2500 parts per reel

STPIC6C595TTR TSSOP16 (Tape and reel) 2500 parts per reel

March 2009 Rev 5 1/22

www.st.com

22

Contents STPIC6C595

Contents

1 Logic symbol and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2 Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Typical operating circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Typical performance and characteristics . . . . . . . . . . . . . . . . . . . . . . . 13

7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22

STPIC6C595 Logic symbol and pin configuration

1 Logic symbol and pin configuration

Figure 1. Logic symbol and pin configuration

Figure 2. Input and output equivalent circuits

3/22

Maximum rating STPIC6C595

2 Maximum rating

Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

2.1 Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

V

I

I

Logic supply voltage (See Note 1)7V

CC

V

Logic input voltage range -0.3 to 7 V

I

Power DMOS drain to source voltage (See Note 2)33V

DS

Continuous source to drain diode anode current 250 mA

DS

Pulsed source to drain diode anode current

DS

(See Note 3)

Pulsed drain current, each output, all output ON

I

D

I

D

I

D

= 25 °C)

(T

C

Continuous current, each output, all output ON

= 25 °C)

(T

C

Peak drain current single output
(TC = 25 °C) (See Note 3)

500 mA

250 mA

100 mA

250 mA

E

I

T

Single pulse avalanche energy

AS

(See Figure 11 and Figure 12)

Avalanche current (See Note 4 and Figure 17)200mA

AS

P

Continuous total dissipation (TC ≤ 25 °C)

d

P

Continuous total dissipation (TC = 125 °C)

d

T

Operating virtual junction temperature range -40 to +150 °C

J

T

Operating case temperature range -40 to +125 °C

C

Storage temperature range -65 to +150 °C

stg

Lead temperature 1.6 mm (1/16 inch) from case for 10

T

L

seconds

4/22

30 mJ

1087 mW

217 mW

260 °C

STPIC6C595 Maximum rating

2.2 Thermal data

Table 3. Thermal data

Symbol Parameter Value Unit

R

th(JA)

Thermal resistance junction-ambient 115 °C/W

2.3 Recommended operating conditions

Table 4. Recommended operating conditions

Symbol Parameter Min Typ Max Unit

V

CC

V

V

I

DP

t

su

t

hL

Logic supply voltage 4.5 5.5 V

High level input voltage

IH

Low level input voltage 0

IL

0.85V

CC

Pulse drain output current
(TC = 25 °C, V

= 5 V, all outputs ON)

CC

(see Note 3, Note 5 and Figure 15)

Set-up time, SER IN high before SRCK ↑
(see Figure 4 and Figure 8)

Hold time, SER IN high before G ↑
(see Figure 4, Figure 7, Figure 8)

1.6 3.0 5.7 ns

2.8 4.0 9.6 ns

V

CC

0.15V

CC

250 mA

V

V

t

W

T

Pulse duration (see Figure 8)40ns

Operating case temperature -40 125 °C

C

5/22

Electrical characteristics STPIC6C595

3 Electrical characteristics

3.1 DC characteristics

Table 5. DC characteristics (V

Symbol Parameter Test conditions Min Typ Max Unit

V

(BR)DSX

V

V

V

I

I

I

CC

I

CC(FRQ)

I

I

DSX

R

DS(on)

Drain-to-source
breakdown voltage

Source-to-drain diode

SD

forward voltage

High level output

OH

voltage SER OUT

Low level output

OL

voltage SER OUT

High level input current

IH

Low level input current

IL

Logic supply current

Logic supply current at
frequency

Nominal current

N

Off-state drain current

Static drain source on
state resistance
(See Note 5, Note 6
and Figure 14,

Figure 16)

= 5 V, TC = 25 °C, unless otherwise specified.)

CC

ID = 1 mA

IF = 100 mA

= -20 μA, VCC = 4.5 V

I

OH

I

= -4 mA, VCC = 4.5 V

OH

IOH = 20 μA, VCC = 4.5 V

I

= 4 mA, VCC = 4.5 V

OH

= 5.5 V, VI = V

V

CC

= 5.5 V, VI = 0

V

CC

CC

VCC = 5.5 V, all outputs OFF or
ON

= 5 MHz, CL = 30 pF

f

SRCK

All outputs OFF
(See Figure 6, Figure 18 and

33 37 V

0.85 1.2 V

4.4 4.49 V

44.2 V

0.005 0.1 V

0.3 0.5 V

20 200 μA

0.2 2 mA

Figure 19)

V

= 0.5 VIN = I

DS(on)

TC = 85 °C

D

90 mA

(See Note 5, Note 6, Note 7)

= 30 V, VCC = 5.5 V

V

DS

V

= 30 V, VCC =5.5 V or 0 V

DS

= 125 °C

T

C

= 50 mA, VCC = 4.5 V

I

D

I

= 50 mA, VCC = 4.5 V

D

= 125 °C

T

C

I

= 100 mA, VCC = 4.5 V

D

0.3 5 μA

0.6 8 μA

4.5 6 Ω

6.5 9 Ω

4.5 6 Ω

1 μA

-1 μA

6/22

STPIC6C595 Electrical characteristics

3.2 Switching characteristics

Table 6. Switching characteristics (V

Symbol Parameter Test conditions Min Typ Max Unit

Propagation delay

t

time, high to low level

PHL

output from G

= 5 V, TC = 25 °C, unless otherwise specified.)

CC

80 ns

t

PLH

t

Propagation delay
time, low to high level
output from G

t

Rise time, drain output 60 ns

r

t

Fall time, drain output 50 ns

f

propagation delay time 20 ns

pd

Reverse recovery

t

a

current rise time

t

Reverse recovery time 115 ns

rr

CL = 30 pF, ID = 75 mA
(See Figure 4, Figure 5,

Figure 6, Figure 7, Figure 20)

= 100 mA, di/dt = 10 A/μs

I

F

(See Figure 5, Figure 6, and

Figure 9, Figure 10 )

Note: 1 All voltage value are with respect to GND

2 Each power DMOS source is internally connected to GND

3 Pulse duration

≤

100 μs and duty cycle ≤ 2 %

4 Drain supply voltage = 15 V, starting junction temperature (T

I

= 200 mA (see Fig. 11 and 12)

AS

5 Technique should limit T

- TC to 10 °C maximum

J

6 These parameters are measured with voltage sensing contacts separate from the current-

carrying contacts.

7 Nominal current is defined for a consistent comparison between devices from different

sources. It is the current that produces a voltage drop of 0.5 V at T

130 ns

39 ns

) = 25 °C. L = 1.5 H and

JS

= 85 °C.

C

7/22