ST STP9NK90Z, STF9NK90Z, STW9NK90Z User Manual

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N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247

STP9NK90Z - STF9NK90Z

STW9NK90Z

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP9NK90Z
STF9NK90Z
STW9NK90Z

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

900 V
900 V
900 V

(on) = 1.1 Ω

DS

DSS

R

DS(on)

< 1.3 Ω
< 1.3 Ω
< 1.3 Ω

I

D

8A
8A
8A

Pw

160 W

40 W

160 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ s eries is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDmes h™ products.

TO-220

1

3

2

TO-220FP

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES

■ DC-AC CONVERTERS FOR WELDING, UPS

AND MO TOR DRIVE

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP9NK90Z P9NK90Z TO-220 TUBE
STF9NK90Z F9NK90Z TO-220FP TUBE

STW9NK90Z W9NK90Z TO-247 TUBE

1/11April 2003

STP9NK90Z - STF9NK90Z - STW9NK90Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP9NK90Z STF9NK90Z STW9NK90Z

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤8A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

900 V

900 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

8 8 (*) 8 A

5 5 (*) 5 A
Drain Current (pulsed) 32 32 (*) 32 A
Total Dissipation at TC= 25°C

160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4KV

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150

-55to150

°C
°C

THERMAL DATA

TO-220 TO-220FP TO-247

Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

8A

300 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them saf ely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/11

STP9NK90Z - S TF9NK9 0Z - STW9NK90Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 900 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 3.6 A 1.1 1.3 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 3.6 A 5.75 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 2115

V

DS

190

40

VGS=0V,VDS= 0V to 720V 115 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=450V,ID=4A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

=720V,ID=8A,

V

DD

V

=10V

GS

22
13

72
14
38

100

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 450 V, ID=4A
R

=4.7ΩVGS=10V

G

55
28

(Resistive Load see, Figure 3)

t

r(Voff)

t

f

t

c

Fall Time
Cross-over Time

Off-voltage Rise Time

= 720V, ID=8A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

53
11
22

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 8 A, VGS=0
I

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

= 8 A, di/dt = 100A/µs

950

10
21

when VDSincreases from 0 to 80%

oss

8

32

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/11

STP9NK90Z - STF9NK90Z - STW9NK90Z

Safe Operating F or TO-220

Thermal Impedance For TO-220

Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP

Safe Operating Area For TO-247

4/11

Thermal Impedance For TO-247

STP9NK90Z - S TF9NK9 0Z - STW9NK90Z

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source O n Resistance

Gate Charge vs Gate-so urc e V oltage Capacitance V ariations

5/11

STP9NK90Z - STF9NK90Z - STW9NK90Z

Normalized On Resistance vs Tem peratureNormalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/11

STP9NK90Z - S TF9NK9 0Z - STW9NK90Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

7/11

STP9NK90Z - STF9NK90Z - STW9NK90Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/11

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP9NK90Z - S TF9NK9 0Z - STW9NK90Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/11

STP9NK90Z - STF9NK90Z - STW9NK90Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/11

STP9NK90Z - S TF9NK9 0Z - STW9NK90Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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11/11