ST STP9NK60ZD, STF9NK60ZD, STB9NK60ZD User Manual

STB9NK60ZD

STP9NK60ZD - STF9NK60ZD STB9NK60ZD

N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK SuperFREDMesh™ MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STP9NK60ZD	600 V	< 0.95 Ω	7 A	125 W
STF9NK60ZD	600 V	< 0.95 Ω	7 A	30 W
STB9NK60ZD	600 V	< 0.95 Ω	7 A	125 W

■TYPICAL RDS(on) = 0.85 Ω

■VERY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■LOW INTRINSIC CAPACITANCES

■FAST INTERNAL RECOVERY DIODE

DESCRIPTION

The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology.

APPLICATIONS

■HID BALLAST

■ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS

ADVANCED DATA

3

2

1

TO-220

TO-220FP

3 1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STP9NK60ZD	P9NK60ZD	TO-220	TUBE
STF9NK60ZD	F9NK60ZD	TO-220FP	TUBE
STB9NK60ZDT4	B9NK60ZD	D2PAK	TAPE & REEL

January 2004

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ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value			Unit
			TO-220 / D2PAK		TO-220FP
VDS	Drain-source Voltage (VGS = 0)		600			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )		600			V
VGS	Gatesource Voltage		± 30			V
ID	Drain Current (continuos) at TC = 25°C		7		7 (*)	A
ID	Drain Current (continuos) at TC = 100°C		4.3		4.3 (*)	A
IDM ( )	Drain Current (pulsed)		28		28 (*)	A
PTOT	Total Dissipation at TC = 25°C		125		30	W
	Derating Factor		1		0.24	W/°C
VESD(G-S)	Gate source ESD (HBM-C=100pF, R=1.5KΩ)		4000			V
dv/dt (1)	Peak Diode Recovery voltage slope		15			V/ns
VISO	Insulation Withstand Voltage (DC)		-		2500	V
Tj	Operating Junction Temperature		-55 to 150			°C
Tstg	Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 7A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, Tj = 25°C

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220		TO-220FP	Unit
		D2PAK
Rthj-pcb	Thermal Resistance Junction-pcb Max	30			°C/W
	(When mounted on minimum Footprint)
Rthj-case	Thermal Resistance Junction-case Max	1		4.16	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max		62.5		°C/W
Tl	Maximum Lead Temperature For Soldering		300		°C
	Purpose

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	7	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	235	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	30			V
	Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1mA, VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100µA	2.5	3.5	4.5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 3.5 A		0.85	0.95	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 15 V, ID = 3.5 A		5.3		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1110		pF
Coss	Output Capacitance			135		pF
Crss	Reverse Transfer Capacitance			30		pF
Coss eq. (3)	Equivalent Output Capacitance	VGS = 0V, VDS = 0V to 480V		72		pF
SWITCHING ON
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 300 V, ID = 3.5 A		22		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		17		ns
		(Resistive Load see, Figure 3)
Qg	Total Gate Charge	VDD = 480V, ID = 7 A,		41	53	nC
Qgs	Gate-Source Charge	VGS = 10V		8.7		nC
Qgd	Gate-Drain Charge			21		nC
SWITCHING OFF
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 300 V, ID = 3.5 A		42		ns
tf	Fall Time	RG = 4.7Ω VGS = 10 V		15		ns
		(Resistive Load see, Figure 3)
tr(Voff)	Off-voltage Rise Time	VDD = 480V, ID = 7 A,		11		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		8		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		20		ns
SOURCE DRAIN DIODE
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				7	A
ISDM (2)	Source-drain Current (pulsed)				28	A
VSD (1)	Forward On Voltage	ISD = 7 A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 7 A, di/dt = 100A/µs		150		ns
Qrr	Reverse Recovery Charge	VDD = 30V, Tj = 25°C		663		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		8.5		A
trr	Reverse Recovery Time	ISD = 7 A, di/dt = 100A/µs		194		ns
Qrr	Reverse Recovery Charge	VDD = 30V, Tj = 150°C		935		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		9.6		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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Safe Operating Area For TO-220/D²PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D²PAK

Thermal Impedance For TO-220FP

Output Characteristics

Transfer Characteristics

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