ST STP7NK80Z, STP7NK80ZFP, STB7NK80Z, STB7NK80Z-1 Diagram
STP7NK80Z - STP7NK80ZFP
3
STB7NK80Z - STB7NK80Z-1
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PA K
Zener-protected SuperMESH™ Power MOSFET
General features
V
Type
DSS
(@Tjmax)
R
DS(on)
I
D
STP7NK80Z 800V < 1.8Ω 5.2A
STP7NK80ZFP 800V < 1.8Ω 5.2A
STB7NK80Z 800V < 1.8Ω 5.2A
STB7NK80Z-1 800V < 1.8Ω 5.2A
■ Extremely high dv/dt capability
■ 100% avalange tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
TO-220
D2PAK
3
1
TO-220FP
I2PAK
Internal schematic diagram
2
1
3
2
1
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STP7NK80Z P7NK80Z TO-220 Tube
STP7NK80ZFP P7NK80ZFP TO-220FP Tube
STB7NK80ZT4 B7NK80Z D²PAK Tape e reel
STB7NK80Z-1 B7NK80Z-1 I²PAK Tube
October 2006 Rev 5 1/18
www.st.com
18
Contents STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Val ue
Symbol Parameter
TO-220 / D²PAK
I²PAK
TO-220FP
Unit
Drain-source voltage (VGS = 0) 800 V
DS
Gate- source voltage ± 30 V
GS
Drain current (continuous) at TC = 25°C 5.2 5.2
D
Drain current (continuous) at TC = 100°C 3.3 3.3
D
(2)
Drain current (pulsed) 20.8 20.8
Total dissipation at TC = 25°C 125 30 W
I
DM
P
V
V
I
I
TOT
Derating factor 1 0.24 W/°C
V
ESD(G-S)
dv/dt
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
(3)
Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS) from all
V
ISO
three leads to external heat sink
(t=1s; Tc= 25°C)
T
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 5.2 A, di/dt ≤ 200A/µs, VDD ≤ V
Max operating junction temperature
j
Storage temperature
stg
(BR)DSS
, Tj ≤ T
JMAX.
(1)
(1)
(1)
-- 2500 V
-55 to 150
°C
°C
A
A
A
Table 2. Thermal data
Symbol Parameter
R
thj-case
R
thj-amb
Thermal resistance junction-case max 1 4.2 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
T
l
purpose
TO-220/D
I2PA K
Val ue
2
PA K
TO-220FP
300 °C
Unit
3/18
Electrical ratings STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
E
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
5.2 A
210 mJ
4/18
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1 Electrical characteristics
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown voltage
Zero gate voltage
Drain Current (V
GS
= 0)
Gate-body leakage
Current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
=1MA, VGS = 0
I
D
= Max rating
V
DS
= Max rating, TC = 125°C
V
DS
VGS = ± 20 V
= VGS, ID = 100 µA
V
DS
VGS = 10 V, ID = 2.6 A
800 V
1
50µAµA
± 10 µA
33.754.5 V
1.5 1.8 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 15v, ID = 2.6 A
V
DS
= 25 V, f = 1 MHz,
V
DS
= 0
V
GS
5S
1138
122
25
pF
pF
pF
C
oss eq.
(2)
t
d(on)
t
r(off)
Q
Q
Q
t
r(Voff)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
increases from 0 to 80% V
Equivalent output
capacitance
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
r
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
Off-voltage rise time
t
Fall time
r
Cross-over time
t
c
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
.
VDS =0V, VDS = 0V to 640V
V
DD
R
G
(see Figure 16)
V
DD
V
GS
(see Figure 17)
V
DD
R
G
(see Figure 16)
= 400 V, ID = 2.6 A,
= 4.7 Ω, V
GS
= 10 V
= 640 V, ID = 5.2 A,
= 10 V
= 640 V, ID = 5.2 A,
= 4.7 Ω, V
GS
= 10 V
50 pF
20
12
45
20
40
7
21
12
10
20
when VDS
oss
ns
ns
ns
ns
56 nC
nC
nC
ns
ns
ns
5/18
Electrical characteristics STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
(1)
I
SDM
V
SD
Q
I
RRM
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Source-drain current (pulsed)
(2)
Forward on voltage
t
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
= 5.2 A, VGS = 0
I
SD
= 5.2 A, di/dt = 100
I
SD
A/µs
= 50 V, Tj = 150°C
V
DD
(see Figure 21)
530
3.31
12.5
5.2
20.8AA
1.6 V
ns
µC
A
Table 7. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
BV
GSO
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
6/18
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