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N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type V
STP75NS04Z Clamped < 11mΩ 80A
■ Low capacitance and gate charge
■ 100% avalanche tested
■ 175°C maximum junction temperature
DSS
Description
R
DS(on)
I
D
STP75NS04Z
3
2
1
TO-220
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Applications
■ Switching application
■ Power tools
Order codes
Part number Marking Package Packaging
Internal schematic diagram
STP75NS04Z P75NS04Z TO-220 Tube
June 2006 Rev 1 1/12
www.st.com
12
Contents STP75NS04Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP75NS04Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
V
I
I
I
D
I
DG
GS
TOT
DS
DG
GS
(1)
D
Drain-source voltage (VGS = 0)
Drain-gate voltage (VGS = 0)
Gate-source voltage Clamped V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain gate current (continuos) ±50 mA
Gate source current (continuos) ±50 mA
(2)
Drain current (pulsed) 320 A
Total dissipation at TC = 25°C
Derating factor 0.73 W/°C
V
ESD
T
T
stg
1. Current limited by wire bonding
2. Pulse with limited by safe operating area
Gate-source ESD (HBM-C=100pF, R=1.5KΩ) ±8 kV
Operating junction temperature
j
Storage temperature
Table 2. Thermal data
Clamped V
Clamped V
80 A
63 A
110 W
-55 to 175 °C
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
Thermal resistance junction-case Max 1.36 °C/W
Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering purpose 300 °C
l
Table 3. Avalanche data
Symbol Parameter Value Unit
E
AS
Single pulse avalanche energy (starting Tj=25°C,
, VDD=25V)
I
D=IAR
470 mJ
3/12
Electrical characteristics STP75NS04Z
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test condictions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(VDS = 0)
Gate threshold breakdown
voltage
Gate threshold voltage
Static drain-source on
resistance
= 1mA, VGS= 0
I
D
= 16V
V
DS
V
= ±10V
GS
IGS= ±100µA
= VGS, ID = 250µA
V
DS
VGS= 10V, ID= 40A
33 V
1µA
2 µA
18 V
234V
711mΩ
Table 5. Dynamic
Symbol Parameter Test condictions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
=15V, ID = 15A
V
DS
= 25V, f = 1 MHz,
V
DS
=0
V
GS
= 20V, ID= 80 A,
V
DD
= 10 V
V
GS
(see Figure 13)
50 S
1860
628
196
50
14
16
pF
pF
pF
nC
nC
nC
4/12
STP75NS04Z Electrical characteristics
Table 6. Switching on/off
Symbol Parameter Test condictions Min. Typ. Max. Unit
= 20V, ID = 40A
V
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
DD
= 4.7 Ω, VGS= 10V,
R
G
(see Figure 12)
V
= 20V, ID = 40A
DD
= 4.7 Ω, VGS= 10V,
R
G
(see Figure 12)
16
248
53
85
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test condictions Min. Typ. Max. Unit
I
SD
Source-drain current
(1)
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current (pulsed)
(2)
Forward on Voltage
t
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
=80A, VGS=0
SD
=80A, di/dt = 100A/µs,
I
SD
=30V, Tj=150°C
V
DD
(see Figure 17)
53
91
3.4
80
320AA
1.5 V
ns
nC
A
5/12
Electrical characteristics STP75NS04Z
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized B
vs temperature Figure 6. Static drain-source on resistance
VDSS
6/12
STP75NS04Z Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
7/12
Test circuit STP75NS04Z
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
8/12
STP75NS04Z Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data STP75NS04Z
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/12
STP75NS04Z Revision history
5 Revision history
Table 8. Revision history
Date Revision Changes
06-Jun-2006 1 First release
11/12
STP75NS04Z
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