ST STP5NK80Z, STP5NK80ZFP Specifications

N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP

3

Zener-protected SuperMESH™ Power MOSFET

General features

V

Type

STP5NK80Z 800 V < 2.4 Ω 4.3 A

STP5NK80ZFP 800 V < 2.4 Ω 4.3 A

DSS

(@Tjmax)

R

DS(on)

STP5NK80Z

STP5NK80ZFP

I

D

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

Applications

■ Switching application

TO-220FPTO-220

Internal schematic diagram

2

1

Order codes

Part number Marking Package Packaging

STP5NK80Z P5NK80Z TO-220 Tube

STP5NK80ZFP P5NK80ZFP TO-220FP Tube

August 2006 Rev 4 1/15

www.st.com

15

Contents STP5NK80Z - STP5NK80ZFP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/15

STP5NK80Z - STP5NK80ZFP Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

TO-220 TO-220FP

I

V

V

DM

P

Drain-source voltage (VGS = 0) 800 V

DS

Gate-source voltage ± 30 V

GS

I

Drain current (continuous) at TC = 25°C 4.3

D

I

Drain current (continuous) at TC=100°C 2.7

D

(2)

Drain current (pulsed) 17.2

Total dissipation at TC = 25°C 110 30 W

TOT

Derating factor 0.88 0.24 W/°C

V

ESD(G-S)

dv/dt

Gate source ESD
(HBM-C=100pF, R=1.5ΚΩ)

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from all

V

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 4.3A, di/dt ≤200A/µs, VDD ≤ V

three leads to external heat sink

ISO

(t=1s; T

T

Operating junction temperature

J

Storage temperature

stg

= 25°C)

c

(BR)DSS

, Tj ≤ T

JMAX.

4.3

2.7

17.2

(1)

(1)

(1)

A

A

A

3500 V

-2500V

-55 to 150 °C

Table 2. Thermal data

Symbol Parameter Value Unit

TO-220 TO-220FP

R

thj-case

R

thj-a

T

Thermal resistance junction-case max 1.14 4.2 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering

l

purpose

300 °C

3/15

Electrical ratings STP5NK80Z - STP5NK80ZFP

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

I

AR

E

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy

AS

(starting Tj=25°C, Id=Iar, Vdd=50V)

4.3 A

190 mJ

Table 4. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BV

Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

GSO

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

4/15

STP5NK80Z - STP5NK80ZFP Electrical characteristics

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current
(VGS = 0)

Gate threshold voltage V

Static drain-source on
resistance

= 1mA, VGS= 0 800 V

I

D

V

= Max rating,

DS

= Max rating,

V

DS

Tc = 125°C

V

= ± 20V ±10 µA

GS

= VGS, ID = 100µA 3 3.75 4.5 V

DS

= 10V, ID = 2.15 A 1.9 2.4 Ω

V

GS

1

50

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

C

g

fs

C

C

C

osseq

t

d(on)

t

d(off)

Q
Q
Q

t

d(Voff)

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(2)

.

capacitance

Turn-on delay time

t

Rise time

r

Turn-on delay time

t

fall time

r

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Off-voltage rise time
Fall time

t

r

Cross-over time

=15V, ID = 2.15A 4.25 S

DS

910

=25V, f=1 MHz, VGS=0

V

DS

98
20

=0, V

V

GS

=400 V, ID= 2 A,

V

DD

=4.7Ω, VGS=10V

R

G

(see Figure 18)

=640V, ID = 4.3A

V

DD

=10V

V

GS

VDD=640 V, ID= 4.3 A,

=4.7Ω, VGS=10V

R

G

(see Figure 20)

=0V to 400V 40 pF

DS

18
25
45
30

32.4

45.5 nC

5

18.5

22
10
32

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC

ns
ns
ns

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

increases from 0 to 80% V

DSS

when VDS

oss

5/15

Electrical characteristics STP5NK80Z - STP5NK80ZFP

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 4.3 A

SD

(1)

Source-drain current (pulsed) 17.2 A

(2)

Forward on voltage ISD= 4.3 A, VGS=0 1.6 V

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

= 4.3 A,

I

SD

di/dt = 100A/µs,

=40 V, Tj = 150°C

V

DD

(see Figure 20)

500

3

12

ns
µC

A

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STP5NK80Z - STP5NK80ZFP Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220FP

(HV11720)

Figure 4. Thermal impedance for TO-220FP

Figure 5. Output characterisics Figure 6. Transfer characteristics

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Electrical characteristics STP5NK80Z - STP5NK80ZFP

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage

8/15

vs temperature

Figure 12. Normalized on resistance vs

temperature

STP5NK80Z - STP5NK80ZFP Electrical characteristics

Figure 13. Source-drain diode forward

characteristics

Figure 15. Avalanche energy vs temperature

Figure 14. Normalized BVdss vs temperature

9/15

Test circuit STP5NK80Z - STP5NK80ZFP

3 Test circuit

Figure 16. Unclamped Inductive load test

circuit

Figure 18. Switching times test circuit for

resistive load

Figure 17. Unclamped Inductive waveform

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load

switching and diode recovery times

10/15

STP5NK80Z - STP5NK80ZFP Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

11/15

Package mechanical data STP5NK80Z - STP5NK80ZFP

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0 .098 0.1 08

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.0 39

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1 .126 1.2 04

L4 9.8 10.6 .038 5 0.417

L5 2.9 3.6 0.114 0.1 41

L6 15.9 16.4 0 .626 0.6 45

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

H

12/15

L2

L5

F2

G1

G

123

L4

STP5NK80Z - STP5NK80ZFP Package mechanical data

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15.75 0.60 0.620

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0. 048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0. 511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

13/15

Revision history STP5NK80Z - STP5NK80ZFP

5 Revision history

Table 8. Revision history

Date Revision Changes

09-Sep-2004 2 Preliminary version

06-Sep-2005 3 Final version

16-Aug-2006 4 New template, no content change

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STP5NK80Z - STP5NK80ZFP

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