Datasheet STP20NF06, STF20NF06 Datasheet (ST)

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查询STF20NF06供应商

N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP

TYPE

STP20NF06
STF20NF06

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

o

■ 175

■ HIGH dv/dt CAPABILITY

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

V

DSS

60 V
60 V

(on) = 0.06 Ω

DS

CHARACTERIZATION

R

DS(on)

< 0.07 Ω
< 0.07 Ω

I

D

20 A

20 A(*)

STP20NF06

STF20NF06

STripFET™ II POWER MOSFET

Figure 1:PackageTable 1: General Featur es

2

TO-220 TO-220FP

2

DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low on-

Figure 2: Internal Schematic Diagram

resistance, rugged ava lanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

Table 2: Order Codes

STP20NF06
STF20NF06

Part Number MARKING PACKAGE PACKAGING

P20NF06
F20NF06

TO-220

TO-220FP

TUBE
TUBE

Table 3: ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP20NF06 STF20NF06

V

DS

V

DGR

V

GS

I

D

I

D

I

(•)

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(•) Pulse width limited by safe operating area.
(*)Refer to soa for the max allowab le c urr ent v alue on F P-ty pe due

to Rth value

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V

60 V
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C

20 20(*) A

14 14(*) A
Drain Current (pulse d) 80 80(*) A
Total Dissipation at TC = 25°C

60 28 W
Derating Factor 0.4 0.18 W/°C

(1)

Peak Diode Recove ry vo ltag e slo pe 9 V/ns

(2)

Single Pulse Avalanche Energy 120 mJ
Storage Temperature
Operating Junction Temperature

(1) I

≤20A, di/dt ≤200A/µs, VDD ≤ V

SD

(2) Starting Tj = 25 oC, ID = 10A, VDD= 30V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX

Rev. 1

1/10December 2004

STP20NF06 STF20NF06

Table 4: THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 °C/W

Rthj-amb

T

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max 62.5

300

°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

= Max Rating

I

DSS

I

GSS

Table 6: ON

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

(5)

DS

= 0)

GS

= 0)

V

DS

= Max Rating TC = 125°C

V

DS

= ± 20V

V

GS

1

10

±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS ID = 250 µA

DS

V

= 10 V ID = 10 A

GS

234V

0.06 0.07 Ω

Resistance

Table 7: DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(5)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

15 V

V

DS =

DS

ID

= 25V f = 1 MHz VGS = 0

= 8 A

10 S

400
100

40

µA
µA

pF
pF
pF

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STP20NF06 STF20NF06

ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 10 A

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge

Table 9: SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

Table 10: SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1 )

Pulse width limited by safe operating area.

(2)

Pulsed: Pulse duration = 300 µs , duty cycle 1.5 %.

Source-drain Curre nt

(1)

Source-drain Curre nt (pu lse d)

(2)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

V

DD

=4.7 Ω VGS = 10 V

R

G

(Resistive Load, Figu re )
V

= 30 V ID= 20 A VGS= 10 V

DD

V

= 30 V ID = 10 A

DD

=4.7Ω, V

R

G

GS

= 10 V

(Resistive Load, Figu re 3)

I

= 20 A VGS = 0

SD

I

= 20 A di/dt = 100A/µs

SD

= 20 V Tj = 150°C

V

DD

(see test circuit, Figure 5)

5

15

14

3.0

5.5

15

5

50
80

3.2

18 nC

20
80

1.5 V

ns
ns

nC
nC

ns
ns

A
A

ns

µC

A

Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP

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STP20NF06 STF20NF06

Figure 5: Therm al Im pe da nce Figure 6: Thermal Impe da nce for TO -22 0F P

Figure 7: Output Characteristics Figure 8: Transf er Ch ar ac ter ist ics

Figure 9: Transconductance Figure 10: Static Drain-source On Resistance

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STP20NF06 STF20NF06

Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations

Figure 13: Normalized Gate Threshold Voltage vs

Temperature

Figure 15: Source-drain Diode Forward

Characteristics

Figure 14: Normalized on Resist an c e vs Te mpe r at ur e

Figure 16: Normalized Breakdown Voltage

Temperature

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STP20NF06 STF20NF06

Figure 17: Unclamped Inductive Load Test Circuit

Figure 19: Switching Times Test Circuits For Resis­tive Load

Figure 18: Unclamped Inductive Waveform

Figure 20: Gate Charge test Circuit

Figure 21: Test C ircuit For In ductive Lo ad Switchin g
And Diode Recovery Times

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STP20NF06 STF20NF06

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

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STP20NF06 STF20NF06

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

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STP20NF06 STF20NF06

Table 11:Revision History

Date Revision Description of Changes

07-Nov-2004

1.0 FIRST ISSUE

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STP20NF06 STF20NF06

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nformation furnished is believed to be accurate and reliable. Howe ver, STMicroelectronics assumes no responsibility for the consequence

f use of such information nor for any infrin gement of patents or other rights of third parties which may resul t from its use. No license is grante
y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subje

o change without notic e. This publication supersedes and replaces all information previously supplied. STMicroelectronics produ cts are n

uthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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