ST STP20NF06, STF20NF06 User Manual
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查询STF20NF06供应商
N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
TYPE
STP20NF06
STF20NF06
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
o
■ 175
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
V
DSS
60 V
60 V
(on) = 0.06 Ω
DS
CHARACTERIZATION
R
DS(on)
< 0.07 Ω
< 0.07 Ω
I
D
20 A
20 A(*)
STP20NF06
STF20NF06
STripFET™ II POWER MOSFET
Figure 1:PackageTable 1: General Featur es
2
TO-220 TO-220FP
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low on-
Figure 2: Internal Schematic Diagram
resistance, rugged ava lanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
STP20NF06
STF20NF06
Part Number MARKING PACKAGE PACKAGING
P20NF06
F20NF06
TO-220
TO-220FP
TUBE
TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP20NF06 STF20NF06
V
DS
V
DGR
V
GS
I
D
I
D
I
(•)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(•) Pulse width limited by safe operating area.
(*)Refer to soa for the max allowab le c urr ent v alue on F P-ty pe due
to Rth value
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C
20 20(*) A
14 14(*) A
Drain Current (pulse d) 80 80(*) A
Total Dissipation at TC = 25°C
60 28 W
Derating Factor 0.4 0.18 W/°C
(1)
Peak Diode Recove ry vo ltag e slo pe 9 V/ns
(2)
Single Pulse Avalanche Energy 120 mJ
Storage Temperature
Operating Junction Temperature
(1) I
≤20A, di/dt ≤200A/µs, VDD ≤ V
SD
(2) Starting Tj = 25 oC, ID = 10A, VDD= 30V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
Rev. 1
1/10December 2004
STP20NF06 STF20NF06
Table 4: THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 °C/W
Rthj-amb
T
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max 62.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60 V
Breakdown Voltage
= Max Rating
I
DSS
I
GSS
Table 6: ON
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
(5)
DS
= 0)
GS
= 0)
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20V
V
GS
1
10
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS ID = 250 µA
DS
V
= 10 V ID = 10 A
GS
234V
0.06 0.07 Ω
Resistance
Table 7: DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(5)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
15 V
V
DS =
DS
ID
= 25V f = 1 MHz VGS = 0
= 8 A
10 S
400
100
40
µA
µA
pF
pF
pF
2/10
STP20NF06 STF20NF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 10 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge
Table 9: SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
Table 10: SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1 )
Pulse width limited by safe operating area.
(2)
Pulsed: Pulse duration = 300 µs , duty cycle 1.5 %.
Source-drain Curre nt
(1)
Source-drain Curre nt (pu lse d)
(2)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, Figu re )
V
= 30 V ID= 20 A VGS= 10 V
DD
V
= 30 V ID = 10 A
DD
=4.7Ω, V
R
G
GS
= 10 V
(Resistive Load, Figu re 3)
I
= 20 A VGS = 0
SD
I
= 20 A di/dt = 100A/µs
SD
= 20 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
5
15
14
3.0
5.5
15
5
50
80
3.2
18 nC
20
80
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
µC
A
Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP
3/10
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