ST STP200NF03, STB200NF03, STB200NF03-1 User Manual

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N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220

TYPE

STB200NF03/-1
STP200NF03

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

V

DSS

30 V
30 V

(on) = 0.0032Ω

DS

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

R

DS(on)

<0.0036
<0.0036

Ω
Ω

STP200NF03

STB200NF03 STB200NF03-1

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

I

D

120 A(**)
120 A(**)

3

1

²

PAK

²

D

PAK

TO-263

TO-220

INTERNAL SCHEMATIC DIAGRAM

I

TO-262

3

2

1

3

2

1

Ordering Information

STB200NF03T4 B200NF03

SALES TYPE MARKING PACKAGE PACKAGING

STP200NF03 P200NF03 TO-220 TUBE
STB200NF03-1 B200NF03

2

D

PAK

2

I

PAK

T APE & REEL

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(**) Drain Current (continuous) at T

I

D

I

D

(

I

DM

P

tot

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

30 V
30 V

Gate- source Voltage ± 20 V

= 25°C

C

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

120 A
120 A

300 W

Derating Factor 2.0 W/°C

(1)

dv/dt

E

AS

T

stg

T

j

Pulse widt h l i m i ted by safe op erating area.

(

•)

(**) Curre nt Limited by Pac kage

Peak Diode Recovery voltage slope 1.5 V/ns

(2)

Single Pulse Avalanche Energy 1.45 J
Storage Temperature
Operating Junction Temperature

(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V

(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

October 2002

JMAX

1/14

STB200NF03/-1 STP200NF03

THERMA L D ATA

Rthj-case

Rthj-amb

Rthj-pcb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose

l

(for 10 sec. 1.6 mm from case)

Max
Max
Max

Typ

0.5

62.5

see curve on page 6

300

°C/W
°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA VGS = 0

D

30 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS I

DS

V

= 10 V ID = 60 A

GS

= 250 µA

D

24V

0.0032 0.0036

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

15 V ID= 60 A

DS =

= 25V, f = 1 MHz, VGS = 0

V

DS

200 S

4950
1750

280

µA
µA

Ω

pF
pF
pF

2/14

STB200NF03/-1 STP200NF03

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 24V ID= 120A VGS= 10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s af e operatin g area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 120 A VGS = 0

SD

= 120 A di/dt = 100A/µs

I

SD

V

= 25 V Tj = 150°C

DD

(see test circuit, Figure 5)

30

195

113

32
41

75
60

70

170

5

140 nC

120
480

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area Thermal Impedance

3/14

STB200NF03/-1 STP200NF03

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/14

STB200NF03/-1 STP200NF03

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

Power Derating vs Tc Max Id Current vs Tc.

5/14

STB200NF03/-1 STP200NF03

Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area

Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:

P
E

= 0.5 * (1.3 * BV

D(AVE)

= P

AS(AR)

D(AVE)

* t

AV

DSS

* IAV)

Where:
I

is the Allowable Current in Avalanche

AV

P
t

AV

To derate above 25

is the Average Power Dissipation in Avalanche (Single Pulse)

D(AVE)

is the Time in Avalanche

o

C, at fixed IAV, the following equation must be applied:

= 2 * (T

I

AV

jmax

- T

CASE

)/ (1.3 * BV

DSS

* Zth)
Where:
Z

= K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

th

6/14

SPICE THERMAL MODEL

STB200NF03/-1 STP200NF03

Parameter

CTHERM1 5 - 4 0.011
CTHERM2 4 - 3 0.0012
CTHERM3 3 - 2 0.05
CTHERM4 2 - 1 0.1

RTHERM1 5 - 4 0.09
RTHERM2 4 - 3 0.02
RTHERM3 3 - 2 0.11
RTHERM4 2 - 1 0.17

Node Value

7/14

STB200NF03/-1 STP200NF03

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 4: Gate Charge Test Circuit

Fig. 3.1: Switching Time Waveform

Fig. 4.1: Gate Charge Test Waveform

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STB200NF03/-1 STP200NF03

Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform

9/14

STB200NF03/-1 STP200NF03

D²PA K MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

10/14

STB200NF03/-1 STP200NF03

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

11/14

STB200NF03/-1 STP200NF03

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

12/14

STB200NF03/-1 STP200NF03

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

BASE QTY BULK QTY

1000 1000

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STB200NF03/-1 STP200NF03

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.

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