ST STP200NF03, STB200NF03, STB200NF03-1 User Manual
STB200NF03
STP200NF03 STB200NF03 STB200NF03-1
N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
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STB200NF03/-1 |
30 V |
<0.0036 Ω |
120 A(**) |
STP200NF03 |
30 V |
<0.0036 Ω |
120 A(**) |
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■TYPICAL RDS(on) = 0.0032Ω
■STANDARD THRESHOLD DRIVE
■100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■HIGH CURRENT, HIGH SWITCHING SPEED
■DC-DC & DC-AC CONVERTERS
■SOLENOID AND RELAY DRIVERS
AUTOMOTIVE SPECIFIC
1 |
3 |
2 |
3 |
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1 |
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D²PAK |
I²PAK |
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TO-262 |
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TO-263 |
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3 |
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2 |
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1 |
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TO-220 |
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INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE |
MARKING |
PACKAGE |
PACKAGING |
STB200NF03T4 |
B200NF03 |
D2PAK |
TAPE & REEL |
STP200NF03 |
P200NF03 |
TO-220 |
TUBE |
STB200NF03-1 |
B200NF03 |
I2PAK |
TUBE |
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
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VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
30 |
V |
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VGS |
Gatesource Voltage |
± 20 |
V |
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ID(**) |
Drain Current (continuous) at TC = 25°C |
120 |
A |
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ID |
Drain Current (continuous) at TC = 100°C |
120 |
A |
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IDM(∙) |
Drain Current (pulsed) |
480 |
A |
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Ptot |
Total Dissipation at TC = 25°C |
300 |
W |
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Derating Factor |
2.0 |
W/°C |
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dv/dt (1) |
Peak Diode Recovery voltage slope |
1.5 |
V/ns |
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EAS (2) |
Single Pulse Avalanche Energy |
1.45 |
J |
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Tstg |
Storage Temperature |
-55 to 175 |
°C |
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Tj |
Operating Junction Temperature |
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(∙) Pulse width |
limited by safe operating area. |
(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ |
TJMAX |
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(**) Current Limited by Package |
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V |
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October 2002 |
1/14 |
STB200NF03/-1 STP200NF03
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
0.5 |
°C/W |
Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
62.5 |
°C/W |
Rthj-pcb |
Thermal Resistance Junction-pcb |
Max |
see curve on page 6 |
°C/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
Typ |
300 |
°C |
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(for 10 sec. 1.6 mm from case) |
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ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250 µA |
VGS = 0 |
30 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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1 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating TC = 125°C |
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10 |
µA |
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IGSS |
Gate-body Leakage |
VGS = ± 20V |
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±100 |
nA |
Current (VDS = 0) |
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ON (*)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 µA |
2 |
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4 |
V |
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RDS(on) |
Static Drain-source On |
VGS = 10 V |
ID = 60 A |
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0.0032 |
0.0036 |
Ω |
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Resistance |
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DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs (*) |
Forward Transconductance |
VDS = 15 V |
ID = 60 A |
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200 |
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S |
Ciss |
Input Capacitance |
VDS = 25V, f = 1 MHz, VGS = 0 |
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4950 |
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pF |
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Coss |
Output Capacitance |
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1750 |
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pF |
Crss |
Reverse Transfer |
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280 |
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pF |
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Capacitance |
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2/14
STB200NF03/-1 STP200NF03
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
Turn-on Delay Time |
VDD = 15 V |
ID = 60 A |
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30 |
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ns |
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tr |
Rise Time |
RG = 4.7 |
Ω |
VGS = 10 V |
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195 |
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ns |
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(Resistive |
Load, Figure 3) |
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Qg |
Total Gate Charge |
VDD= 24V |
ID= 120A VGS= 10V |
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113 |
140 |
nC |
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Qgs |
Gate-Source Charge |
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32 |
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nC |
Qgd |
Gate-Drain Charge |
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41 |
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nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
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Min. |
Typ. |
Max. |
Unit |
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td(off) |
Turn-off Delay Time |
VDD = 15 V |
ID = 60 |
A |
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75 |
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ns |
tf |
Fall Time |
RG = 4.7Ω, |
VGS = 10 |
V |
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60 |
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ns |
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(Resistive Load, Figure 3) |
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SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
Source-drain Current |
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120 |
A |
ISDM (∙) |
Source-drain Current (pulsed) |
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480 |
A |
VSD (*) |
Forward On Voltage |
ISD = 120 A |
VGS = 0 |
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1.3 |
V |
trr |
Reverse Recovery Time |
ISD = 120 A |
di/dt = 100A/µs |
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70 |
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ns |
Qrr |
Reverse Recovery Charge |
VDD = 25 V |
Tj = 150°C |
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170 |
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nC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
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5 |
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A |
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(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.
Safe Operating Area |
Thermal Impedance |
3/14 |
STB200NF03/-1 STP200NF03
Output Characteristics
Transconductance |
Gate Charge vs Gate-source Voltage
4/14 |
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB200NF03/-1 STP200NF03
Normalized Gate Threshold Voltage vs Temperature |
Normalized on Resistance vs Temperature |
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Source-drain Diode Forward Characteristics |
Normalized Breakdown Voltage vs Temperature. |
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.Power Derating vs Tc |
.Max Id Current vs Tc. |
5/14 |
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