STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURENT, HIGH SWITCHING SPEED
■ AUTOMOTIVE
3
1
2
PAK
D
TO-263
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
2
I
PAK
TO-262
3
2
1
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
DS
V
DGR
V
GS
I
(
•)
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Current limited by package
•)
February 2004
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
40V
40V
Gate- source Voltage± 20V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
••)
Drain Current (pulsed)480A
Total Dissipation at TC = 25°C
120A
120A
310W
Derating Factor2.07W/°C
(1)
Peak Diode Recovery voltage slope7V/ns
(1)
Single Pulse Avalanche Energy860mJ
Storage Temperature
Max. Operating Junction Temperature
Pulse wi dth limited by safe operat i ng area.
(
••)
1) I
≤190A, di/dt ≤600A/ µ s , VDD ≤ V
SD
-55 to 175°C
(BR)DSS
, Tj ≤ T
JMAX
1/9
STB190NF04/-1 STP190NF04
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
Typ
0.48
50
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
V
(BR)DSS
Drain-source
= 250 µA VGS = 0
D
40V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 20V
V
GS
1
10
±100nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS ID = 250 µA
DS
V
= 10 V ID = 95A
GS
24V
0.00390.0043
Resistance
DYNAMIC
SymbolParameterTest ConditionsMin.Typ.Max.Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
15 V ID= 95 A
DS =
V
= 25V, f = 1 MHz, VGS = 0
DS
200S
5800
1500
200
µA
µA
Ω
pF
pF
pF
2/9
STB190NF04/-1 STP190NF04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SymbolParameterTest ConditionsMin.Typ.Max.Unit
= 20 V ID = 95 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operatin g area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
V
=20V ID=190 A VGS=10V
DD
= 20 V ID = 95 A
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
I
= 120 AVGS = 0
SD
I
= 190 Adi/dt = 100A/µs
SD
= 34 VTj = 150°C
V
DD
(see test circuit, Figure 5)
45
380
130
40
45
100
75
120
480
1.3V
90
295
6.5
ns
ns
nC
nC
nC
ns
ns
A
A
ns
nC
A
3/9
STB190NF04/-1 STP190NF04
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test CircuitFig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or p atent rights of STMi croelectr oni cs. Spec i fications mentioned i n this publicatio n are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout expres s written approval of STMi croelectr o nics.
The ST logo is registered trademark of STMicroelectronics
2002 STMi croelectr onics - All Rights Rese rved
All other na m es are the prop erty of their respectiv e owners.
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http:// www.st.com
9/9
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