ST STP16NF06L, STP16NF06LFP User Manual

STP16NF06L

STP16NF06L

STP16NF06LFP

N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STP16NF06L	60 V	<0.09 Ω	16 A
STP60NF06LFP	60 V	<0.09 Ω	11 A

■TYPICAL RDS(on) = 0.07Ω

■EXCEPTIONAL dv/dt CAPABILITY

■LOW GATE CHARGE AT 100 oC

■LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

3	3
2	2
1	1
TO-220	TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter		Value		Unit
			STP16NF06L		STP16NF06LFP
	VDS	Drain-source Voltage (VGS = 0)		60		V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ)		60		V
	VGS	Gatesource Voltage		± 16		V
	ID	Drain Current (continuous) at TC = 25°C	16		11(*)	A
	ID	Drain Current (continuous) at TC = 100°C	11		7.5(*)	A
	IDM(∙)	Drain Current (pulsed)	64		44(*)	A
	Ptot	Total Dissipation at TC = 25°C	45		25	W
		Derating Factor	0.3		0.17	W/°C
	dv/dt (1)	Peak Diode Recovery voltage slope		23		V/ns
	EAS (2)	Single Pulse Avalanche Energy		127		mJ
	VISO	Insulation Withstand Voltage (DC)	--------		2500	V
	Tstg	Storage Temperature	-55 to 175			°C
	Tj	Operating Junction Temperature
	(∙) Pulse width limited by safe operating area.		(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
	(*) Current Limited by package’s thermal resistance		(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
	August 2002					1/9

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STP16NF06L/FP

THERMAL DATA

			TO-220		TO-220FP
Rthj-case	Thermal Resistance Junction-case	Max	3.33		6	°C/W
Rthj-amb
	Thermal Resistance Junction-ambient	Max		62.5		°C/W
Tl	Maximum Lead Temperature For Soldering Purpose			300		°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	60			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 16V			±100	nA
	Current (VDS = 0)

ON (1)

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA		1			V
RDS(on)	Static Drain-source On	VGS = 5 V	ID = 8	A		0.08	0.10	Ω
	Resistance	VGS = 10 V	ID = 8	A		0.07	0.09	Ω

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
g (*)	Forward Transconductance	VDS > ID(on) x RDS(on)max,		17		S
fs		ID = 8 A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		345		pF
Coss	Output Capacitance			72		pF
Crss	Reverse Transfer			29		pF
	Capacitance

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STP16NF06L/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 30 V	ID = 8 A		10		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 4.5 V		37		ns
		(Resistive Load, Figure 3)
Qg	Total Gate Charge	VDD = 48 V ID = 16 A VGS= 5V			7.3	10	nC
Qgs	Gate-Source Charge				2.1		nC
Qgd	Gate-Drain Charge				3.1		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 30 V	ID = 8 A		20		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 4.5 V		12.5		ns
		(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					16	A
ISDM (∙)	Source-drain Current (pulsed)					64	A
VSD (*)	Forward On Voltage	ISD = 16 A	VGS = 0			1.3	V
trr	Reverse Recovery Time	ISD = 16 A	di/dt = 100A/µs		50		ns
Qrr	Reverse Recovery Charge	VDD = 16 V	Tj = 150°C		67.5		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			2.7		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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