查询P16NE供应商
TYPE V
STP16NE06L
STP16NE06LFP
STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE POWER MOSFET
TARGET DATA
DSS
60 V
60 V
R
DS(on)
< 0.12 Ω
< 0.12 Ω
I
D
16 A
11 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
o
■ 175
■ HIGH dV/dt CAPABILITY
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
=0.09 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packingdensity for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
Symbol Parameter Value Unit
ST P16NE06L ST P16NE06LF P
V
V
V
I
DM
P
Drain-s ource Volt age (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)60V
DGR
Gate-source Voltage ± 15 V
GS
Drain Cur rent (co nt inu ous ) a t Tc=25oC1611A
I
D
Drain Cur rent (co nt inu ous ) a t Tc=100oC107A
I
D
(•) Drain Current (pulsed) 64 64 A
Tot al Dissipation at Tc=25oC6030W
tot
Derat ing F ac tor 0.4 0.2 W/
V
Insulation W ithstand Voltage (DC) 2000 V
ISO
dV/ dt Peak Diod e Recov ery v olt ag e slope 6 V/ ns
T
(•) Pulse width limitedby safe operating area (1)ISD≤ 16 A,di/dt ≤ 200 A/µs, VDD≤ V
Storage Temperature -65 t o 175
stg
Max. Operating J unc t i on Temperature 175
T
j
(BR)DSS,Tj≤TJMAX
October 1997
o
C
o
C
o
C
1/7
STP16NE06L/FP
THERMAL DATA
TO - 2 20 TO - 220FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Value Uni t
I
AR
E
Ther mal Resistance Junctio n-c ase Max 2.5 5
Ther mal Resistance Junctio n-am bien t Max
Ther mal Resistance Case-sink Typ
Maximum Lead T em p er ature For Soldering P ur pose
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limit ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
62.5
0.5
300
16 A
80 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS=0 60 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 15V æ 100 nA
GS
1
10
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thres hold Volt age VDS=VGSID=250µA234V
St at ic Drain-source On
Resistance
VGS=5V ID=8A
= 10V ID=8A
V
GS
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
0.090 0.12 Ω
16 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=8 A 6 S
VDS=25V f=1MHz VGS= 0 800
100
50
µA
µA
pF
pF
pF
2/7
STP16NE06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area
Turn-on Time
Rise Time
r
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
Off -voltage R ise T ime
t
Fall T ime
f
Cross-over Time
c
VDD=30V ID=8A
=4.7 W VGS=5V
R
G
VDD=40V ID=16A VGS=5V nC
VDD=48V ID=16A
=4.7 Ω VGS=5V
R
G
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 16 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
Charge
Reverse Recovery
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/7
STP16NE06L/FP
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode RecoveryTimes
4/7
TO-220 MECHANICAL DATA
STP16NE06L/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
5/7
STP16NE06L/FP
TO-220FP MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
6/7
STP16NE06L/FP
Informationfurnished is believedto be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rights of third partieswhich may results fromits use. No
license is granted by implication or otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics -Printed in Italy- All Rights Reserved
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