ST STP16NE06, STP16NE06FP User Manual

STP16NE06

®

STP16NE06

STP16NE06FP

N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP

STripFET™ POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STP16NE06	60 V	< 0.100 W	16 A
STP16NE06FP	60 V	< 0.100 W	11 A

■TYPICAL RDS(on) = 0.08 Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■175oC OPERATING TEMPERATURE

■HIGH dV/dt CAPABILITY

■APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■DC MOTOR CONTROL

■DC-DC & DC-AC CONVERTERS

■SYNCHRONOUS RECTIFICATION

PRELIMINARY DATA

3	3
2	2
1	1
TO-220	TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value				Unit
			STP16NE06		STP16NE06FP
VDS	Drain-source Voltage (VGS = 0)			60			V
VDGR	Draingate Voltage (RGS = 20 kW)			60			V
VGS	Gate-source Voltage			± 20			V
ID	Drain Current (continuous) at Tc = 25 oC		16		11		A
ID	Drain Current (continuous) at Tc = 100 oC		10		7		A
IDM(·)	Drain Current (pulsed)		64		64		A
Ptot	Total Dissipation at Tc = 25 oC		60		30		W
	Derating Factor		0.4		0.2		W/oC
VISO	Insulation Withstand Voltage (DC)		¾		2000		V
dV/dt	Peak Diode Recovery voltage slope			6			V/ns
Tstg	Storage Temperature		-65 to 175				oC
Tj	Max. Operating Junction Temperature			175			oC
(∙) Pulse width	limited by safe operating area	(1) ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

’New RDS (on) spec. starting from JULY 98

June 1998	1/9

STP16NE06/FP

THERMAL DATA

					TO-220		TO-220FP
Rthj-case	Thermal Resistance Junction-case			Max	2.5		5	oC/W
Rthj-amb	Thermal	Resistance	Junction-ambient	Max	62.5			oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	0.5			oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300			oC

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	16	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	80	mJ
	(starting Tj = 25 oC, ID = IAR, VDD = 25 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		60			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating				1	μA
	Drain Current (VGS = 0)	VDS = Max Rating	Tc = 125			10	μA
		oC
IGSS	Gate-body Leakage	VGS = ± 20 V				± 100	nA
	Current (VDS = 0)

ON ( )

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold	VDS = VGS	ID = 250 μA	2	3	4	V
	Voltage
RDS(on)	Static Drain-source On	VGS = 10V	ID = 8 A		0.080	0.100	Ω
	Resistance
ID(on)	On State Drain Current	VDS > ID(on) x RDS(on)max		16			A
		VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID(on) x RDS(on)max	ID =8 A		6		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		760	1000	pF
Coss	Output Capacitance				100	140	pF
Crss	Reverse Transfer				30	45	pF
	Capacitance

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STP16NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Time	VDD = 30 V	ID = 8 A		10	80	ns
tr	Rise Time	RG =4.7 W	VGS = 10 V		35	40	ns
Qg	Total Gate Charge	VDD = 40 V	ID = 16 A VGS = 10 V		20	30	nC
Qgs	Gate-Source Charge				5		nC
Qgd	Gate-Drain Charge				7		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 48 V	ID = 16 A		7	10	ns
tf	Fall Time	RG =4.7 Ω	VGS = 10 V		18	25	ns
tc	Cross-over Time				30	45	ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ. Max.	Unit
ISD	Source-drain Current				16	A
ISDM(∙)	Source-drain Current				64	A
	(pulsed)
VSD ( )	Forward On Voltage	ISD = 16 A	VGS = 0		1.5	V
trr	Reverse Recovery	ISD = 16 A	di/dt = 100 A/μs		70	ns
	Time	VDD = 30 V	Tj = 150 oC			μC
Qrr	Reverse Recovery				0.21
	Charge
IRRM	Reverse Recovery				6	A
	Current

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (∙) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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