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N - CHANNEL 100V - 0.14 Ω - 16A - TO-220
TYPE V
DSS
STP16N10L 100 V < 0.16 Ω 16 A
■
TYPICAL R
■
AVALANCHE RUGG ED TECHNOLO GY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100oC
■
HIGH CURRENT CAPABILITY
■
175oC OPERATING TEMPERATURE
■
HIGH dV/dt RUGGEDNESS
■
APPLICATION ORIENTED
DS(on)
= 0.14
CHARACTERIZATION
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
POWER MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
■
SYNCRONOUS RECTIFICATION
R
DS(on)
I
D
Ω
STP16N10L
POWER MOS TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dV/dt(1) Peak Diode Recovery voltage slope 0.6 V/ns
T
Drain-source Voltage (VGS = 0) 100 V
DS
Drain- gate Voltage (RGS = 20 kΩ)100V
DGR
Gate-source Voltage ± 15 V
GS
I
Drain Current (continuous) at Tc = 25 oC16A
D
I
Drain Current (continuous) at Tc = 100 oC11A
D
(•) Drain Current (pulsed) 64 A
Total Dissipation at Tc = 25 oC90W
tot
Derating Factor 0.4 W/
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
March 1999
1/5
STP16N10L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
1.67
62.5
0.5
300
16 A
150 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 100 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 15 V ± 100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= VGS ID = 250 µA 1 1.7 2.5 V
DS
VGS = 5V ID = 8 A
V
= 10V ID = 8 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.14
0.12
16 A
0.16
0.14
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8 A 6.5 10 S
50
1100
200
70
= 0 800
GS
150
µA
µA
Ω
Ω
pF
pF
pF
2/5
STP16N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 50 V ID = 8 A
DD
R
= 4.7 Ω VGS = 5 V
G
15
40
20
55
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 80 V ID = 16 A V
DD
= 5 V 20
GS
6
10
30 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 80 V ID = 16 A
DD
R
= 4.7 Ω VGS = 5 V
G
12
12
25
18
18
35
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
16
64
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
I
= 16 A di/dt = 100 A/µs
SD
V
= 30 V Tj = 150 oC
DD
145
580
Charge
I
RRM
Reverse Recovery
8
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
3/5
E
STP16N10L
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
4/5
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
STP16N10L
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without exp r ess writt e n ap proval o f STM i cr oel ectronics.
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