ST STP15N05L, STP15N05LFI User Manual

STP15N05L

STP15N05LFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 0.115 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

■ 175

o

C OPERATING TEMPERATURE

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220 ISOWATT220

November 1996

TYPE V

DSS

R

DS(on)

I

D

STP 15N05L

STP 15N05LFI

50 V

50 V

<0.15Ω

<0.15Ω

15 A

10 A

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 15N05L ST P15N05LF I

V

DS

Drain - s ource Voltage (V

GS

=0) 50 V

V

DGR

Drain- gate Voltage (R

GS

=20kΩ)50V

V

GS

Gate-source Voltage ± 15 V

I

D

Drain Current (continuous) at T

c

=25

o

C1510A

I

D

Drain Current (continuous) at T

c

=100

o

C10 7A

I

DM

(•) Drain Current (pulsed) 60 60 A

P

tot

Total D i ssipation at T

c

=25

o

C7035W

Derat ing Factor 0.47 0.23 W/

o

C

V

ISO

Ins ulation Withs t and Voltage (DC)  2000 V

T

stg

St or a ge Tem perature -65 to 175

o

C

T

j

Max. Operating Junctio n Temperatur e 175

o

C

(•) Pulsewidth limited bysafe operating area

1

2

3

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THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

Thermal Resistance Junction - cas e M ax 2.14 4.29

o

C/W

R

thj-amb

R

thc-sink

T

l

Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead T emperature For Soldering Purp ose

62.5

0.5

300

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(pulse width limited by T

j

max, δ <1%)

15 A

E

AS

Single Pul se Avalanche Ener gy

(starti ng T

j

=25

o

C, I

D

=I

AR

,V

DD

=25V)

45 mJ

E

AR

Repetitive Avalanc he Energ y

(pulse width limited by T

j

max, δ <1%)

10 mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(T

c

= 100

o

C, puls e width limited by T

j

max, δ <1%)

10 A

ELECTRICAL CHARACTERISTICS (T

case

=25

o

C unless otherwise specified)

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

Break d own Volta ge

I

D

=250µAV

GS

=0 50 V

I

DSS

Zer o Gate Voltage

Drain Current (V

GS

=0)

V

DS

=MaxRating

V

DS

= Max R ating x 0.8 T

c

=125

o

C

1

10

µA

µA

I

GSS

Gat e- body Leakage

Current (V

DS

=0)

V

GS

= ±

15 V ± 100 nA

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage V

DS

=V

GS

I

D

=250µA11.62.5V

R

DS(on)

St at ic Drain-s our ce O n

Resistance

V

GS

=5 V I

D

=7.5A 0.115 0.15 Ω

I

D(on)

On St ate Dra in Current V

DS

>I

D(on)

xR

DS(on)max

V

GS

=10 V

15 A

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconductance

V

DS

>I

D(on)

xR

DS(on)max

I

D

=7.5A 5 9 S

C

iss

C

oss

C

rss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

V

DS

=25V f=1MHz V

GS

=0 350

150

50

500

200

80

pF

pF

pF

STP15N05L/FI

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time

Rise Time

V

DD

=25V I

D

=7.5A

R

G

=50

Ω V

GS

=5V

(see test circuit, figure 3)

60

190

90

270

ns

ns

(di/dt)

on

Turn-on C urrent Slope V

DD

=40V I

D

=15A

R

G

=50

Ω V

GS

=5V

(see test circuit, figure 5)

120 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge

Gat e- Source Charge

Gate-Drain Charge

V

DD

=40V I

D

=15A V

GS

=5V 12

7

4

18 nC

nC

nC

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

f

t

c

Off -voltage R ise Time

Fall Time

Cross-over Time

V

DD

=40V I

D

=15A

R

G

=50

Ω V

GS

=5V

(see test circuit, figure 5)

40

60

110

60

90

160

ns

ns

ns

SOURCE DRAIN DIODE

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

SD

I

SDM

(•)

Source-drain Current

Source-drain Current

(pulsed)

15

60

A

A

V

SD

(∗) For ward O n V oltage I

SD

=15A V

GS

=0 1.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I

SD

= 15 A di/dt = 100 A/µs

V

DD

=25V T

j

=150

o

C

(see test circuit, figure 5)

80

0.18

4.5

ns

µC

A

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %

(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

STP15N05L/FI

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