ST STP150NF55, STW150NF55 User Manual

STB150NF55 STP150NF55 STW150NF55

N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

TYPE	VDSS	RDS(on)	ID
STB150NF55	55 V	<0.006 Ω	120 A(**)
STP150NF55	55 V	<0.006 Ω	120 A(**)
STP150NF55	55 V	<0.006 Ω	120 A(**)

■TYPICAL RDS(on) = 0.005 Ω

■SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

1	3
D2PAK	TO-247
TO-263
(Suffix “T4”)
	3
	2
	1
	TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■HIGH CURRENT, HIGH SWITCHING SPEED

■SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■DC-DC & DC-AC CONVERTERS

■AUTOMOTIVE

Ordering Information

SALES TYPE			MARKING		PACKAGE	PACKAGING
STB150NF55T4			B150NF55		D2PAK	TAPE & REEL
STP150NF55			P150NF55		TO-220	TUBE
STW150NF55			W150NF55		TO-247	TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol		Parameter			Value		Unit
VDS	Drain-source Voltage (VGS = 0)			55			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)			55			V
VGS	Gatesource Voltage			± 20			V
ID(**)	Drain Current (continuous) at TC = 25°C			120			A
ID	Drain Current (continuous) at TC = 100°C			106			A
IDM(∙)	Drain Current (pulsed)			480			A
Ptot	Total Dissipation at TC = 25°C			300			W
	Derating Factor			2.0			W/°C
dv/dt (1)	Peak Diode Recovery voltage slope			8			V/ns
EAS (2)	Single Pulse Avalanche Energy			850			mJ
Tstg	Storage Temperature				-55 to 175		°C
Tj	Operating Junction Temperature
(∙) Pulse width	limited by safe operating area.			(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤			TJMAX
(**) Current Limited by Package				(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V

October 2002

1/14

STB150NF55 STP150NF55 STW150NF55

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	0.5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	62.5	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	Typ	300	°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA	VGS = 0	55			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating				1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C				10	µA
IGSS	Gate-body Leakage	VGS = ± 20 V				±100	nA
	Current (VDS = 0)

ON (*)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA	2		4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 60 A		0.005	0.006	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (*)	Forward Transconductance	VDS = 15 V	ID = 60 A		160		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0			4400		pF
Coss	Output Capacitance				1050		pF
Crss	Reverse Transfer				350		pF
	Capacitance

2/14

STB150NF55 STP150NF55 STW150NF55

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 27.5 V	ID = 60 A		35		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10 V		180		ns
		(Resistive Load, Figure 3)
Qg	Total Gate Charge	VDD=27.5 V ID=120A VGS= 10V			140	170	nC
Qgs	Gate-Source Charge				35		nC
Qgd	Gate-Drain Charge				70		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 27.5 V	ID = 60	A		140		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 10	V		80		ns
		(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					120	A
ISDM (∙)	Source-drain Current (pulsed)					480	A
VSD (*)	Forward On Voltage	ISD = 120 A	VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 120 A	di/dt = 100A/µs		130		ns
Qrr	Reverse Recovery Charge	VDD = 25 V	Tj = 150°C		350		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			7.5		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

3/14

STB150NF55 STP150NF55 STW150NF55

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage			Capacitance Variations

4/14

STB150NF55 STP150NF55 STW150NF55

Normalized Gate Threshold Voltage vs Temperature		Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics					Normalized Breakdown Voltage vs Temperature.

.Power Derating vs Tc

.Max Id Current vs Tc.

5/14