ST STB140NF55, STP140NF55 User Manual

STB140NF55

STB140NF55

STP140NF55

N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET™ II POWER MOSFET

Table 1: General Features

TYPE	VDSS	RDS(on)	ID
STB140NF55	55 V	< 0.008 Ω	80 A
STP140NF55	55 V	< 0.008 Ω	80 A

■ TYPICAL RDS(on) = 0.0065 Ω

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■MOTOR CONTROL

■HIGH CURRENT, SWITCHING APPLICATIONS

■AUTOMOTIVE ENVIRONMENT

Figure 1:Package

3
1	3
D2PAK	2
	1
TO-263
(Suffix “T4”)	TO-220

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

Part Number	MARKING	PACKAGE	PACKAGING
STB140NF55T4	B140NF55	D²PAK	TAPE & REEL
STP140NF55	P140NF55	TO-220	TUBE

Table 3:ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value		Unit
VDS	Drain-source Voltage (VGS = 0)	55		V
VGS	Gatesource Voltage	± 20		V
ID	Drain Current (continuous) at TC = 25°C	80		A
ID	Drain Current (continuous) at TC = 100°C	80		A
IDM(•)	Drain Current (pulsed)	320		A
Ptot	Total Dissipation at TC = 25°C	300		W
	Derating Factor	2		W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	10		V/ns
EAS(2)	Single Pulse Avalanche Energy	1.3		mJ
Tstg	Storage Temperature	-55 to 175		°C
Tj	Operating Junction Temperature
(•) Pulse width	limited by safe operating area.	(1) ISD ≤ 80A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤	TJMAX
(**) Current Limited by Package		(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V

December 2004

Rev. 2

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Table 4: THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	0.5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	62.5	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300	°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Table 5: OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	55			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20 V			±100	nA
	Current (VDS = 0)

Table 6: ON (*)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 40 A		0.0065	0.008	Ω
	Resistance

Table 7: DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (*)	Forward Transconductance	VDS = 25 V	ID = 40 A		100		S
Ciss	Input Capacitance	VDS = 25V	f = 1 MHz VGS = 0		5300		pF
Coss	Output Capacitance				1000		pF
Crss	Reverse Transfer				290		pF
	Capacitance

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ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 27.5 V	ID = 40	A		30		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10	V		150		ns
		(Resistive Load, Figure 3)
Qg	Total Gate Charge	VDD= 44V ID= 80A VGS= 10V				142		nC
Qgs	Gate-Source Charge					27		nC
Qgd	Gate-Drain Charge					55		nC

Table 9: SWITCHING OFF

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 27.5 V	ID = 40	A		125		ns
tf	Fall Time	RG = 4.7 Ω	VGS = 10	V		45		ns
		(Resistive Load, Figure 3)

Table 10: SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					80	A
ISDM (•)	Source-drain Current (pulsed)					320	A
VSD (*)	Forward On Voltage	ISD = 80 A	VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 80 A	di/dt = 100A/µs		90		ns
Qrr	Reverse Recovery Charge	VDD = 20 V	Tj = 150°C		275		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			6.5		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area.

Figure 3:	Safe Operating Area	Figure 4: Thermal Impedance

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Figure 5: Output Characteristics				Figure 6: Transfer Characteristics

Figure 7: Transconductance						Figure 8: Static Drain-source On Resistance

Figure 9: Gate Charge vs Gate-source Voltage										Figure 10: Capacitance Variations

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