ST STB12NK80Z, STP12NK80Z, STW12NK80Z User Manual

STB12NK80Z

STB12NK80Z STP12NK80Z - STW12NK80Z

N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH™ MOSFET

General features

Type	VDSS	RDS(on)	ID	Pw
STB12NK80Z	800 V	<0.75 Ω	10.5 A	190 W
STP12NK80Z	800 V	<0.75 Ω	10.5 A	190 W
STW12NK80Z	800 V	<0.75 Ω	10.5 A	190 W

■EXTREMELY HIGH dv/dt CAPABILITY

■IMPROVED ESD CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEABILITY

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Applications

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC

Order codes

Package

3	3
2	2
1	1

TO-220	TO-247
3
1

D²PAK

Internal schematic diagram

Sales Type	Marking	Package	Packaging
STB12NK80ZT4	B12NK80Z	D²PAK	TAPE & REEL
STP12NK80Z	P12NK80Z	TO-220	TUBE
STW12NK80Z	W12NK80Z	TO-247	TUBE
			Rev 2
September 2005			1/15

www.st.com

1 Electrical ratings

STB12NK80Z - STP12NK80Z - STW12NK80Z

1 Electrical ratings

Table 1.	Absolute maximum ratings
Symbol		Parameter	Value	Unit
VDS		Drain-Source Voltage (VGS = 0)	800	V
VDGR		Drain-gate Voltage (RGS = 20kΩ )	800	V
VGS		Gate-Source Voltage	± 30	V
ID		Drain Current (continuous) at TC = 25°C	10.5	A
ID		Drain Current (continuous) at TC = 100°C	6.6	A
IDM Note 2		Drain Current (pulsed)	42	A
PTOT		Total Dissipation at TC = 25°C	190	W
		Derating Factor	1.51	W/°C
Vesd(G-S)		G-S ESD (HBM C=100pF, R=1.5kΩ)	6000	V
dv/dt		Peak Diode Recovery voltage slope	4.5	V/ns
Note 1
Tj		Operating Junction Temperature	-55 to 150	°C
Tstg		Storage Temperature

Table 2.	Thermal data
			TO-220/D²PAK		TO-247	Unit
Rthj-case		Thermal Resistance Junction-case Max		0.66		°C/W
Rthj-amb		Thermal Resistance Junction-amb Max	62.5		50	°C/W
Tl		Maximum Lead Temperature For Soldering		300		°C
		Purpose

Table 3.	Avalanche characteristics
Symbol		Parameter	Max Value	Unit
IAR		Avalanche Current, repetitive or	10.5	A
		Not-Repetitive (pulse width limited by Tj max)
EAS		Single Pulse Avalanche Energy	400	mJ
		(starting Tj=25°C, ID=IAR, VDD= 50V)

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STB12NK80Z - STP12NK80Z - STW12NK80Z

2 Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)
Table 4.	On/off states
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS		Drain-Source Breakdown	ID = 1mA, VGS= 0	800			V
		Voltage
IDSS		Zero Gate Voltage Drain	VDS = Max Rating,			1	µA
		Current (VGS = 0)	VDS = Max Rating,Tc = 125°C			50	µA
IGSS		Gate Body Leakage Current	VGS = ±20V			±10	µA
		(VDS = 0)
VGS(th)		Gate Threshold Voltage	VDS= VGS, ID = 100 µA	3	3.75	4.5	V
RDS(on)		Static Drain-Source On	VGS= 10 V, ID= 4.5 A		0.65	0.75	Ω
		Resistance

Table 5.	Dynamic
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs Note 4		Forward Transconductance	VDS =15V, ID = 5.25A		12		S
Ciss		Input Capacitance			2620		pF
Coss		Output Capacitance	VDS =25V, f=1 MHz, VGS=0		250		pF
Crss		Reverse Transfer Capacitance			53		pF
Coss eq.		Equivalent Ouput Capacitance	VGS=0, VDS =0V to 640V		100		pF
Note 5
Qg		Total Gate Charge	VDD=640V, ID = 10.5 A		87		nC
Qgs		Gate-Source Charge	VGS =10V		14		nC
Qgd		Gate-Drain Charge	(see Figure 17)		44		nC

Table 6.	Switching times
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)		Turn-on Delay Time	VDD=400 V, ID=5.25 A,		30		ns
			RG=4.7Ω, VGS=10V
tr		Rise Time			18		ns
			(see Figure 18)
td(off)		Turn-off Delay Time	VDD=400 V, ID=5.25A,		70		ns
			RG=4.7Ω, VGS=10V
tf		Fall Time			20		ns
			(see Figure 18)
tr(Voff)		Off-voltage Rise Time	VDD=640 V, ID=10.5A,		16		ns
tf		Fall Time	RG=4.7Ω, VGS=10V		15		ns
tc		Cross-over Time	(see Figure 18)		28		ns

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2 Electrical characteristics

STB12NK80Z - STP12NK80Z - STW12NK80Z

Table 7.

Source drain diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

10.5

A

ISDMNote 2

Source-drain Current (pulsed)

42

A

VSDNote 4

Forward on Voltage

ISD=10.5 A, VGS=0

1.6

V

trr

Reverse Recovery Time

ISD=10.5A, di/dt = 100A/µs,

635

ns

Qrr

Reverse Recovery Charge

5.9

µC

VDD=100 V, Tj=150°C

IRRM

Reverse Recovery Current

18.5

A

Table 8.

Gate-source zener diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source

Igs=±1mA

30

V

Note 6

Breakdown Voltage

(Open Drain)

(1)ISD ≤ 10.5 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2)Pulse width limited by safe operating area

(3)Limited only by maximum temperature allowed

(4)Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%VDSS

(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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STB12NK80Z - STP12NK80Z - STW12NK80Z

2 Electrical characteristics

2.1Electrical Characteristics (curves)

Figure 1. Safe Operating Area for

Figure 2. Thermal Impedance for

TO-220/D²PAK

TO-220/D²PAK

Figure 3. Safe Operating Area for TO-247

Figure 4. Thermal Impedance for TO-247

Figure 5. Output Characteristics

Figure 6. Transfer Characteristics

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