ST STP12NK30Z User Manual
STP12NK30Z
STP12NK30Z
N-CHANNEL 300V - 0.36Ω - 9A - TO-220
Zener-Protected SuperMESH™Power MOSFET
TYPE |
VDSS |
RDS(on) |
ID (1) |
Pw (1) |
STP12NK30Z |
300 V |
< 0.4 Ω |
9 A |
90 W |
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■TYPICAL RDS(on) = 0.36 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■IMPROVED ESD CAPABILITY
■100% AVALANCHE RATED
■GATE CHARGE MINIMIZED
■VERY LOW INTRINSIC CAPACITANCES
■VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■LIGHTING
■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE |
MARKING |
PACKAGE |
PACKAGING |
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STP12NK30Z |
P12NK30Z |
TO-220 |
TUBE |
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December 2002 |
1/8 |
STP12NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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VDS |
Drain-source Voltage (VGS = 0) |
300 |
V |
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VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
300 |
V |
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VGS |
Gatesource Voltage |
± 30 |
V |
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ID |
Drain Current (continuous) at TC = 25°C |
9 |
A |
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Drain Current (continuous) at TC = 100°C |
5.6 |
A |
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IDM (1) |
Drain Current (pulsed) |
36 |
A |
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PTOT |
Total Dissipation at TC = 25°C |
90 |
W |
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Derating Factor |
0.72 |
W/°C |
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VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
3000 |
V/ns |
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dv/dt (2) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
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Tstg |
Storage Temperature |
–55 to 150 |
°C |
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Tj |
Max. Operating Junction Temperature |
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THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
1.38 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
62.5 |
°C/W |
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Tl |
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Maximum Lead Temperature For Soldering Purpose |
300 |
°C |
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Note: 1. |
Pulse width limited by safe operating area |
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2. |
ISD< 9A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX |
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AVALANCHE CHARACTERISTICS
Symbol |
Parameter |
Max Value |
Unit |
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IAR |
Avalanche Current, Repetitive or Not-Repetitive |
9 |
A |
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(pulse width limited by Tj max) |
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EAS |
Single Pulse Avalanche Energy |
155 |
mJ |
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(starting Tj = 25 °C, I D = IAR, VDD = 50 V) |
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GATE-SOURCE ZENER DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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BVGSO |
Gate-Source Breakdown |
Igs=± 1mA (Open Drain) |
30 |
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V |
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Voltage |
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PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
2/8
STP12NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 1 mA, VGS = 0 |
300 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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1 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating, TC = 125 °C |
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50 |
µA |
IGSS |
Gate-body Leakage |
VGS = ± 20V |
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±10 |
µA |
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Current (VDS = 0) |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, ID = 50µA |
3 |
3.75 |
4.5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V, ID = 4.5 A |
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0.36 |
0.4 |
Ω |
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Resistance |
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DYNAMIC
Symbol |
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Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs (1) |
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Forward Transconductance |
VDS = 10 V, ID = 4.5 A |
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5.4 |
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S |
Ciss |
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Input Capacitance |
VDS = 25V, f = 1 MHz, VGS = 0 |
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670 |
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pF |
Coss |
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Output Capacitance |
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125 |
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pF |
Crss |
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Reverse Transfer |
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28 |
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pF |
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Capacitance |
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Coss eq. (3) |
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Equivalent Output |
VGS = 0V, VDS = 0V to 440 V |
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70 |
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pF |
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Capacitance |
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RG |
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Gate Input Resistance |
f=1 MHz Gate DC Bias = 0 |
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3.6 |
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Ω |
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Test Signal Level = 20mV |
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Open Drain |
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SWITCHING |
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Symbol |
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Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
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Turn-on Delay Time |
VDD = 150 V, ID = 4.5 A |
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16 |
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ns |
tr |
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Rise time |
RG = 4.7Ω VGS = 10 V |
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20 |
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ns |
td(off) |
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Turn-off Delay Time |
(Resistive Load see, Figure 3) |
|
36 |
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ns |
tf |
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Fall Time |
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10 |
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ns |
Qg |
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Total Gate Charge |
VDD = 240V, ID = 9 A, |
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25 |
35 |
nC |
Qgs |
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Gate-Source Charge |
VGS = 10V |
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5.5 |
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nC |
Qgd |
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Gate-Drain Charge |
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13.4 |
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nC |
SOURCE DRAIN DIODE |
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Symbol |
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Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
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Source-drain Current |
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9 |
A |
ISDM (2) |
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Source-drain Current (pulsed) |
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36 |
A |
VSD (1) |
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Forward On Voltage |
ISD = 9 A, VGS = 0 |
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1.6 |
V |
trr |
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Reverse Recovery Time |
ISD = 9 A, di/dt = 100A/µs |
|
165 |
|
ns |
Qrr |
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Reverse Recovery Charge |
VDD = 40V, Tj = 150°C |
|
0.9 |
|
µC |
IRRM |
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Reverse Recovery Current |
(see test circuit, Figure 5) |
|
11.2 |
|
A |
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2.Pulse width limited by safe operating area.
3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/8
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