ST STB120NH03L, STP120NH03L User Manual

STMAV340

STB120NH03L

STP120NH03L

N-Channel 30V - 0.005Ω - 9A - TO-220/D2PAK STripFET™ III Power MOSFET for DC-DC Conversion

General features

Type	VDSS	RDS(on)	ID
STB120NH03L	30V	<0.0055Ω	9A Note 1
STP120NH03L	30V	<0.0055Ω	9A Note 1

■Typical RDS(on) = 0.005Ω @ 10V

■RDS(on) *Qg Industry’s Benchmark Low

■Conduction Losses Reduced

■Switching Losses Reduced

■Low Threshold Device

Description

3	3
2	1

1

TO-220 D2PAK

Internal schematic diagram

These devices utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.

Applications

■Specifically designed and optimized for high efficiency DC-DC converters

Order codes

Part Number	Marking	Package	Packaging
STB120NH03L	B120NH03L	D2PAK	TAPE & REEL
STP120NH03L	P120NH03L	TO-220	TUBE
			Rev 1
December 2005			1/14

www.st.com

1 Electrical ratings	STB120NH03L - STP120NH03L

1 Electrical ratings

Table 1.	Absolute maximum ratings
Symbol		Parameter	Value	Unit
VDS		Drain-source Voltage (VGS = 0V)	30	V
VDGR		Drain-gate Voltage (RGS = 20kΩ)	30	V
VGS		Gate-Source Voltage	± 20	V
ID Note 1		Drain Current (continuous) at TC = 25°C	60	A
ID Note 1		Drain Current (continuous) at TC = 100°C	60	A
IDM Note 2		Drain Current (pulsed)	240	A
PTOT		Total Dissipation at TC = 25°C	115	W
		Derating Factor	0.77	W/°C
EAS Note 3		Single Pulse Avalanche Energy	700	mJ
TJ		Operating Junction Temperature	-55 to 175	°C
Tstg		Storage Temperature

Table 2.	Thermal data
RthJC		Thermal Resistance Junction-case Max	1.30	°C/W
RthJA		Thermal Resistance Junction-amb Max	62.5	°C/W
Tl		Maximum Lead Temperature For Soldering	300	°C
		Purpose

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STB120NH03L - STP120NH03L	2 Electrical characteristics

2 Electrical characteristics

( TCASE = 25 °C unless otherwise specified )
Table 3.	On/off states
Symbol		Parameter	Test Conditions		Min.	Typ.	Max.	Unit
V(BR)DSS		Drain-Source Breakdown	ID = 250μA	VGS= 0	30			V
		Voltage
IDSS		Zero Gate Voltage Drain	VDS = Max Rating,				1	µA
		Current (VGS = 0)	VDS = Max Rating,TC=125°C				10	µA
IGSS		Gate Body Leakage Current	VGS = ±20V				±100	µA
		(VDS = 0)
VGS(th)		Gate Threshold Voltage	VDS = VGS	ID = 250µA	1	1.8	2.5	V
RDS(on)		Static Drain-Source On	VGS = 10V	ID = 30A		0.005	0.0055	Ω
		Resistance	VGS = 5V	ID = 30A		0.006	0.0105	Ω

Table 4.	Dynamic
Symbol		Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs Note 4		Forward Transconductance	VDS = 10V	ID = 30A		40		S
Ciss		Input Capacitance				4100		pF
Coss		Output Capacitance	VDS = 15V, f = 1MHz, VGS = 0			680		pF
Crss		Reverse Transfer Capacitance				70		pF
			f = 1MHz Gate DC Bias=0
Rg		Gate Input Resistance	Test Signal Level=20mV			1.3		Ω
			Open Drain
Qg		Total Gate Charge	VDD=15V, ID = 60A			57	77	nC
Qgs		Gate-Source Charge	VGS =10V			11.8		nC
Qgd		Gate-Drain Charge	Figure 14 on page 7			7.3		nC
Qoss Note 5		Output Charge	VDS = 16V	VGS = 0		27		ns
Qgls Note 6		Third-quadrant Gate Charge	VDS < 0	VGS= 10V		55		ns

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2 Electrical characteristics					STB120NH03L - STP120NH03L
Table 5.	Switching times
Symbol		Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)		Turn-on Delay Time	VDD = 15V, ID = 30A,			16		ns
			RG = 4.7Ω, VGS = 10V
tr		Rise Time				95		ns
			Figure 13 on page 7
td(off)		Off voltage Rise Time	VDD = 15V, ID = 30A,			48		ns
			RG = 4.7Ω, VGS = 10V
tf		FallTime				23		ns
			Figure 15 on page 7
Table 6.	Source drain diode
Symbol		Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD		Source-drain Current					60	A
ISDM		Source-drain Current (pulsed)					240	A
VSD Note 4		Forward on Voltage	ISD = 30A	VGS = 0			1.4	V
trr		Reverse Recovery Time	ISD = 60A, di/dt = 100A/µs,			46		ns
Qrr		Reverse Recovery Charge	VDD = 30V, TJ =150°C			64		nC
IRRM		Reverse Recovery Current	Figure 15 on page 7			2.8		A

Note: 1 Value limited by wire bonding

2Pulse width limited by safe operating area

3Starting TJ = 25°C, ID = 30A, VDD = 15V

4Pulsed: pulse duration = 300µs, duty cycle 1.5%

5Qoss = Coss* VIN, Coss = Cgd + Cds. See Power losses calculation

6Gate charge for synchronous operation.

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STB120NH03L - STP120NH03L	2 Electrical characteristics

2.1Electrical chraracteristics (curves)

Figure 1. Safe Operating Area

Figure 2. Thermal Impedance

Figure 3. Output Characteristics			Figure 4. Transfer Characteristics

Figure 5. Transconductance				Figure 6. Static Drain-Source on Resistance

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