ST STP11NM60, STP11NM60FP, STB11NM60, STB11NM60-1 User Manual
1/12May 2003
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL600V - 0.4Ω-11ATO-220/TO-220FP/D
2
PAK/I
2
PAK
MDmesh™Power MOSFET
(*)Limited only by maximum temperature allowed
(1)I
SD
<11A, di/dt<400A/µs, V
DD
<V
(BR)DSS
,T
J
<T
JMAX
TYPICAL R
DS
(on) = 0.4Ω
HIGH dv/dt AND AVALANCHE CA PABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh ™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstandinglow
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family isvery suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
11 A
11 A
11 A
11 A
Symbol Parameter Value Unit
STP(B)11NM60(-1) STP11NM60FP
V
DS
Drain-source Voltage (V
GS
=0)
600 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
600 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuous) at T
C
= 25°C
11 11 (*) A
I
D
Drain Current (continuous) at T
C
= 100°C
7 7 (*) A
I
DM
(
)
Drain Current (pulsed) 44 44 (*) A
P
TOT
Total Dissipation at T
C
= 25°C
160 35 W
Derating Factor 1.28 0.28 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
Insulation Winthstand Voltage (DC) -- 2500 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220
1
2
3
1
2
3
I
2
PAK
1
2
3
TO-220FP
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
查询STB11NM60供应商
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
2/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
1. Pulsed:Pulse duration = 300 µs, duty cycle1.5%.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
TO-220/D
2
PAK/I
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.5 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
=I
AR
,V
DD
=50V)
350 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, T
C
= 125 °C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ±30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,I
D
= 5.5A
0.4 0.45 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
>I
D(on)
xR
DS(on)max,
I
D
= 5.5A
5.2 S
C
iss
Input Capacitance
V
DS
=25V,f=1MHz,V
GS
=0
1000 pF
C
oss
Output Capacitance 230 pF
C
rss
Reverse Transfer
Capacitance
25 pF
C
oss eq.
(2) Equivalent Output
Capacitance
V
GS
=0V,V
DS
= 0V to 480V 100 pF
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6 Ω
3/12
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300V, I
D
= 5.5A
R
G
= 4.7Ω V
GS
=10V
(see test circuit, Figure 3)
20 ns
t
r
Rise Time 20 ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
=11A,
V
GS
=10V
30 nC
Q
gs
Gate-Source Charge 10 nC
Q
gd
Gate-Drain Charge 15 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
=400V,I
D
= 11A,
R
G
= 4.7Ω, V
GS
=10V
(see test circuit, Figure 5)
6ns
t
f
Fall Time 11 ns
t
c
Cross-over Time 19 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 11 A
I
SDM
(2)
Source-drain Current (pulsed) 44 A
V
SD
(1)
Forward On Voltage
I
SD
=11A,V
GS
=0
1.5 V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11A, di/dt = 100A/µs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
390
3.8
19.5
ns
µC
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11A, di/dt = 100A/µs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
570
5.7
20
ns
µC
A
Safe Operating Area for TO-2 20/D2PAK/I2PAK Safe Operating Area for TO-220FP
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
4/12
Transconductance
Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Thermal Impedance for TO-220FP
Thermal Impedance for TO-220/D2PAK/I2PA K
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